Share to:

NCP5106BDR2G

Add to quote

NCP5106BDR2G

Part NumberNCP5106BDR2G
ManufacturerON Semiconductor
CategoryPower Management ICs; High-Speed MOSFET Drivers
DescriptionHigh-Speed Dual IGBT MOSFET Driver, 4A Peak Current, Half-Bridge Configuration, SOP-8 Package

Product Overview

The NCP5106BDR2G is a high-speed, high-performance dual MOSFET driver designed for driving N-channel power MOSFETs in half-bridge and full-bridge topologies. It delivers a peak output current of up to 4A, features ultra-fast rise and fall times, and supports a wide operating voltage range for high-efficiency power conversion systems. The device includes under-voltage lockout (UVLO) protection, matched propagation delays, and cross-conduction prevention logic to ensure safe and reliable operation in switching power supplies, motor drives, and DC-DC converters. With its compact SOP-8 surface-mount package, it offers excellent thermal performance and easy integration into high-density power designs.

Key Specifications
RoHS StatusRoHS Compliant
EDA / CAD Models3D Model, Symbol, Footprint Available
Warranty2-Year Warranty
BrandON Semiconductor
Peak Output Current4A
Driver ConfigurationDual Half-Bridge
Package TypeSOP-8
Operating Temperature-40°C to +125°C

Typical Applications

  • Switching Mode Power Supplies (SMPS)
  • DC-DC Converters & Inverters
  • Motor Drive & Control Systems
  • Class D Audio Amplifiers
  • UPS & Industrial Power Systems
  • Solar Inverters & Energy Storage
  • High-Frequency Power Conversion
  • Half-Bridge / Full-Bridge Driver Circuits

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

[next_prev_pages]
Related Products
Scroll to Top