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IRFP4668PBF

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IRFP4668PBF

Part NumberIRFP4668PBF
ManufacturerInfineon Technologies (International Rectifier)
CategoryDiscrete Semiconductors; N-Channel Power MOSFET
DescriptionN-Channel Enhancement Mode Power MOSFET, 200V, 130A,9.7mΩ, Ultra Low Rds(on), TO-247AC Through Hole Package

Product Overview

The IRFP4668PBF is a high-current, high-voltage N-channel HEXFET power MOSFET from Infineon Technologies. It features ultra-low on-state resistance, ultra-high continuous drain current, fast switching speed, and excellent thermal performance. This RoHS-compliant device provides reliable operation, high surge current capability, and ruggedness, making it ideal for high-power switching, motor drives, inverters, electric vehicles, and industrial power systems.

Key Specifications
BrandInfineon Technologies (IR)
RoHS StatusRoHS Compliant
EDA / CAD Models3D Model, Symbol, Footprint Available
Warranty2-Year Warranty
Package / CaseTO-247AC
Mounting TypeThrough Hole
Surface Marking / SilkscreenIRFP4668
Drain-Source Voltage (Vdss)200 V
Continuous Drain Current (Id)130 A
On-State Resistance (Rds(on))9.7mΩ (Max)
Operating Temperature-55°C to +175°C

Typical Applications

  • High-Current DC Motor Drives & Controllers
  • Electric Vehicle, EV Charger & E-Bike Systems
  • High-Power DC-DC Converters & Inverters
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters & Energy Storage Systems
  • Industrial Welding Equipment & Power Tools
  • Battery Management & High-Current Power Modules
  • Heavy-Duty Industrial Power Switching

Order & Shipping Info

Minimum Order Quantity (MOQ): 1 Piece

Shipping Time: Shipped within 1-2 business days

Delivery Time: 3-7 working days worldwide

Shipping Methods: DHL, UPS, FedEx, EMS

Payment Methods: T/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

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