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HY19P03D
HY19P03D
| Part Number | HY19P03D |
| Manufacturer | HUAYI |
| Category | Transistors – FETs, MOSFETs – Single |
| Description | P-Channel -30V -90A MOSFET with ultra-low on-resistance, packaged in TO-252-2. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HY19P03D is a high-performance P-Channel enhancement mode trench power MOSFET manufactured by HUAYI. Designed with advanced trench technology, it offers a continuous drain current of -90A and a low on-resistance of 8mΩ at Vgs = -4.5V, making it ideal for high-efficiency power management and load switching applications. Packaged in the industry-standard TO-252-2 (DPAK) surface-mount package, it delivers excellent thermal performance and is fully RoHS compliant for global use.
Core Advantages
Ultra-Low On-Resistance
With an RDS(on) as low as 4.8mΩ (typical) and 8mΩ @ -4.5V, the HY19P03D minimizes conduction losses and reduces power dissipation in high-current circuits.
High Current Capability
Rated for -90A continuous drain current, this MOSFET supports demanding load conditions in battery protection, motor drive, and power distribution systems.
Compact & Reliable TO-252 Package
The TO-252-2 package provides excellent thermal conductivity and mechanical stability, suitable for surface-mount assembly and automated production lines.
RoHS Compliant & Environmentally Friendly
Manufactured with lead-free processes, the HY19P03D meets RoHS requirements, ensuring compliance with global environmental regulations.
Key Specifications
| Brand | HUAYI |
| RoHS | RoHS Compliant / Halogen-Free |
| EDA/CAD Model | Available Upon Request |
| Warranty | 1 Year Factory Warranty |
| Package / Case | TO-252-2 (DPAK) |
| Mounting Type | Surface Mount (SMD/SMT) |
| Surface Marking / Silkscreen | HY19P03D Marking |
| Channel Type | P-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | -30V |
| Continuous Drain Current (Id) | -90A |
| On-Resistance (RDS(on)) | 8mΩ @ Vgs = -4.5V (4.8mΩ typical) |
| Gate-Source Voltage (Vgs) | ±20V (Max) |
| Operating Temperature | -55°C ~ +175°C |
Typical Applications
- Battery Protection Modules (BMS)
- High-Side Load Switches
- DC-DC Converters
- Motor Drive Circuits
- Power Distribution Systems
- Automotive Electronics
Order & Shipping Info
- Minimum Order Quantity (MOQ): 1 Piece
- Shipping Time: Shipped within 1-2 business days
- Delivery Time: 3-7 working days worldwide
- Shipping Methods: DHL, UPS, FedEx, EMS
- Payment Methods: T/T (Bank Transfer), PayPal, Credit Card, Western Union
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: Is the HY19P03D in your stock original HUAYI product?
A: Yes, all HY19P03D MOSFETs we offer are 100% original HUAYI factory stock with full traceability.
Q2: What is the main difference between HY19P03D and other P-channel MOSFETs?
A: It offers -90A continuous drain current with very low 8mΩ RDS(on) at -4.5V gate drive, making it ideal for low-voltage, high-current applications.
Q3: Can I get a sample of HY19P03D for testing?
A: Yes, the MOQ is 1 piece, so you can order a single sample for testing purposes.
Q4: Is the HY19P03D RoHS compliant?
A: Yes, it is fully RoHS compliant, suitable for use in global electronic products.
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