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IRFR3710ZTRPBF
IRFR3710ZTRPBF
| Part Number | IRFR3710ZTRPBF |
|---|---|
| Manufacturer | Infineon Technologies (Originally International Rectifier) |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – Single |
| Description | Advanced HEXFET N-Channel Power MOSFET featuring a 100V breakdown voltage, 56A continuous drain current, and low on-resistance, housed in a surface-mount TO-252-3 package optimized for high-frequency switching and synchronous rectification. |
| Stock Status | In Stock |
| Origin | Original Factory Authentic Stock |
Product Overview
The IRFR3710ZTRPBF is Infineon’s high-performance N-channel enhancement-mode HEXFET power MOSFET built on mature trench silicon technology for high-frequency power conversion. It delivers 100V drain-source voltage rating and 56A continuous drain current at 25°C, with optimized cell design to achieve ultra-low Rds(on) and minimal total gate charge Qg, cutting both conduction and switching losses. Fully rated for single-pulse avalanche energy withstand, it resists inductive voltage surges and protects peripheral circuit chips. Supplied in tape-and-reel format with compact TO-252-3 SMT housing, this space-saving power switch suits high-efficiency DC-DC converters, synchronous rectifier circuits and small industrial BLDC motor drive equipment.
Core Advantages
Optimized High-Frequency Switching Performance
Low total gate charge and optimized internal gate resistance reduce switching delay, supporting faster operating frequencies with minimal dynamic power loss.
Excellent Conduction Efficiency
Industry-leading low maximum on-resistance for 100V D-Pak MOSFETs, effectively lowering I²R heat generation under heavy continuous load currents.
Robust Avalanche & Transient Withstand Capability
100% factory tested for single-pulse avalanche energy (Eas) and high dv/dt immunity, preventing component damage caused by unexpected inductive voltage spikes.
Compact SMT D-Pak Thermal Design
Low junction-to-case thermal resistance enables efficient heat dissipation via PCB copper pads, small form factor fully compatible with automated SMT pick-and-place assembly.
Key Specifications
| Brand | Infineon Technologies / International Rectifier |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free (PBF) Matte Tin Plated Terminals |
| EDA/CAD Model | 3D Model & PCB Footprint Available upon request |
| Warranty | 1-Year Standard Factory Warranty |
| Package / Case | TO-252-3 |
| Mounting Type | Surface Mount Technology (SMD/SMT) |
| Surface Marking / Silkscreen | FR3710Z Marking |
| FET Configuration Type | N-Channel MOSFET (Enhancement Mode) |
| Drain-to-Source Voltage (VDS) | 100 V Absolute Maximum Rating |
| Continuous Drain Current (ID) | 56 A (at TC = 25°C, Package Limited) / 39 A (at TC = 100°C) |
| Pulsed Drain Current (IDM) | 230 A Peak Pulse Drain Current |
| Max Drain-Source On-Resistance (RDS(on)) | 18 mΩ Maximum at VGS = 10V |
| Gate-to-Source Voltage (VGS) | ±20 V Absolute Maximum Gate Voltage |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V ~ 4.0 V Typical Turn-On Threshold Range |
| Total Gate Charge (Qg) | 30 nC Typical / 45 nC Maximum (at VGS = 10V, VDS = 50V) |
| Input Capacitance (Ciss) | 1100 pF Typical @ VDS = 50V |
| Output Capacitance (Coss) | 160 pF Typical @ VDS = 50V |
| Reverse Transfer Capacitance (Crss) | 45 pF Typical @ VDS = 50V |
| Reverse Recovery Charge (Qrr) | 60 nC Typical Body Diode Recovery Charge |
| Reverse Recovery Time (trr) | 35 ns Typical Body Diode Recovery Time |
| Maximum Power Dissipation (PD) | 140 W (at TC = 25°C with proper thermal pad dissipation layout) |
| Power Derating Factor | 0.80 W/°C Linear Thermal Derating Slope |
| Junction-to-Case Thermal Resistance (RθJC) | 1.25 °C/W |
| Junction-to-Ambient Thermal Resistance (RθJA) | 44 °C/W |
| Operating Junction Temperature Range | -55°C to +175°C wide industrial operating junction temperature range |
| Storage Temperature Range (TSTG) | -65°C ~ +175°C |
Typical Applications
- High-Efficiency Synchronous Rectification Stages in Switched-Mode Power Supplies (SMPS)
- High-Density Distributed Power Architecture Blocks in Telecom and Network Server Systems
- Compact DC Motor Controllers, Brushless DC (BLDC) Drives, and Cordless Power Tool Switches
- Point-of-Load (POL) Regulators, Uninterruptible Power Supplies (UPS), and Solar Micro-Inverter Bridges
- Active Clamp Networks, Battery Pack Safety Disconnects, and High-Speed Automotive Auxiliary Switched Loads
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: Is your currently available stock of the IRFR3710ZTRPBF power transistor 100% genuine and factory-original?
A: Yes, we guarantee that all IRFR3710ZTRPBF components in our warehouse are 100% brand-new, original factory stock from Infineon Technologies. Every batch is rigorously monitored, handled within standard anti-static ESD safety guidelines, and shipped inside protective factory-sealed reel packaging.
Q2: What do the specific characters “Z”, “TR”, and “PBF” denote in this ordering code structure?
A: The “Z” character indicates an advanced, lower on-resistance cell layout design combined with enhanced dynamic response features over legacy series. The “TR” designation confirms that the component is supplied on Tape and Reel carrier format for automated picking machinery, and the “PBF” suffix verifies full RoHS lead-free environmental compliance.
Q3: What are the package continuous current constraints versus the theoretical silicon limits for this TO-252 MOSFET?
A: While the internal silicon die supports high pulse current peaks, the TO-252-3 package wire bonds and lead structure limit continuous operating current to 56A at 25°C, which is the official factory rated value.
Q4: How can our engineering development division obtain physical step files, SPICE simulation files, or high-volume wholesale pricing schedules?
A: Please complete our Quick Inquiry web form on this page with details about your processing parameters. Our application support desk will process your inquiry and dispatch the available technical documentation package within 24 hours.
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