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IRFR4510TRPBF
IRFR4510TRPBF
| Part Number | IRFR4510TRPBF |
|---|---|
| Manufacturer | Infineon Technologies (Formerly International Rectifier) |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – Single / Field Effect Transistor (MOSFET) |
| Description | Advanced N-Channel HEXFET Power MOSFET featuring a 100V breakdown voltage, 56A continuous package-limited drain current, and ultra-low on-resistance, housed in a surface-mount TO-252 package optimized for high-efficiency switching. |
| Stock Status | In Stock |
| Origin | Original Factory |
| LCSC Item Code | C83843 |
Product Overview
The IRFR4510TRPBF is Infineon’s N-channel HEXFET power MOSFET for high-frequency power conversion. It supports 100V VDS and 56A package-limited drain current, with low RDS(on) and gate charge to cut switching & conduction losses. Packaged in thermal-enhanced TO-252 D-Pak tape-and-reel format for SMT, it fits SMPS, DC-DC converters, BLDC motor drives and synchronous rectifier circuits.
Core Advantages
Ultra-Low On-Resistance (RDS(on))
Engineered to deliver highly restrictive static conduction resistance, directly mitigating I²R power loss overhead under continuous heavy load operations and improving overall system efficiency.
Optimized Fast Switching Dynamics
Features minimized gate charge Qg and low input capacitances, enabling crisp, high-speed switching response times and permitting compact magnetics selection in high-frequency power topologies.
Enhanced Avalanche Ruggedness
Fully single-pulse avalanche energy rated with outstanding dv/dt immunity, offering stable protection against inductive voltage spikes and transient kickbacks.
Space-Saving D-Pak Layout
The surface-mount TO-252AA profile integrates large exposed thermal pad for low junction-to-case thermal resistance, leveraging PCB copper planes for efficient heat dissipation in compact power boards.
Key Specifications
| Brand | Infineon Technologies / Formerly International Rectifier |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free (PBF) Matte Tin Plated Leads |
| EDA/CAD Model | 3D Model & PCB Footprint Available upon request |
| Warranty | 1-Year Standard Factory Warranty |
| Package / Case | TO-252-3 |
| Mounting Type | Surface Mount Technology (SMD/SMT) |
| Tape & Reel Format | TR Suffix: 13-inch standard tape reel for pick-and-place assembly |
| Lead Finish | Matte Tin Lead-Free Plating |
| Surface Marking / Silkscreen | IRFR4510 Marking |
| Device Category | Field Effect Transistor (MOSFET) |
| FET Configuration Type | N-Channel MOSFET (Enhancement Mode) |
| Drain-to-Source Voltage (VDS) | 100 V Absolute Maximum Breakdown Threshold |
| Continuous Drain Current (ID) | 56 A (at TC = 25°C, Package Limited) / 45 A (at TC = 100°C, Package Limited); Silicon Limit 63 A @ 25°C |
| Max Drain-Source On-Resistance (RDS(on)) | 13.9 mΩ (Maximum configuration at VGS = 10 V, ID=38A) |
| Gate-to-Source Voltage (VGS) | ±20 V Maximum Input Dynamic Envelope |
| Total Gate Charge (Qg) | 54 nC Typical / 81 nC Maximum (at VGS = 10 V, VDS = 50 V) |
| Input Capacitance (Ciss) | Low intrinsic gate input capacitance for high-frequency switching |
| Avalanche Energy Rating (Eas) | Single pulse unclamped avalanche energy rated |
| Thermal Resistance RθJC | Low junction-to-case thermal impedance via exposed pad |
| Maximum Power Dissipation (PD) | 143 W (at TC = 25°C with optimal thermal pad interfacing) |
| Operating Junction Temperature Range | -55°C to +175°C (Extended Performance Thermodynamic Stability Window) |
Typical Applications
- High-Efficiency Switch-Mode Power Supplies (SMPS) Primary and Secondary Side Switches
- High-Density DC-to-DC Converters and Distributed Power Architecture Modules
- Synchronous Rectification Functions in Telecommunication and Server Base Stations
- Brushless DC (BLDC) Motor Drivers, Power Inverters, and Cordless Industrial Tool Controls
- Uninterruptible Power Supplies (UPS), Battery Protection Switches, and Solar Micro-Inverter Bridges
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: Is your currently available inventory of the IRFR4510TRPBF power transistor 100% genuine and original?
A: Yes, we guarantee that all IRFR4510TRPBF components in our warehouse are 100% brand-new, original factory stock directly from Infineon Technologies. Every batch is tracked under rigid quality controls and dispatched within specialized anti-static ESD shielding wrappers.
Q2: What do the specific code letters “TR” and “PBF” stand for in this part number?
A: The “TR” designation indicates that the device is supplied on a Tape and Reel carrier format optimized for seamless pick-and-place automated manufacturing systems. The “PBF” suffix confirms a lead-free (Pb-Free) configuration compliant with global RoHS environment standards.
Q3: What is the significance of the package continuous current limit vs. the theoretical silicon capability?
A: While the internal silicon die theoretically supports up to 63A peak continuous current under perfect thermal extraction, the wire bonds and lead frame of standard D-Pak (TO-252AA) limit practical continuous operation to 56A at 25°C, ensuring long-term structural reliability.
Q4: How can our engineering or purchasing team request official datasheet copies, STEP models, or specialized bulk price quotes?
A: Please complete our Quick Inquiry web form on this page with details about your processing parameters. Our application support desk will process your inquiry and dispatch the available technical documentation package within 24 hours.
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