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MW4IC2020NBR1

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MW4IC2020NBR1

Part NumberMW4IC2020NBR1
ManufacturerNXP Semiconductors / Freescale Semiconductor
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFET ICs
Description20W PEP 3-Stage LDMOS RF Power Amplifier IC, 1600MHz-2400MHz, 26V, Built-in 50Ω Matching, TO-272 WB-16, Obsolete.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The MW4IC2020NBR1 is a three-stage wideband LDMOS integrated RF power amplifier IC manufactured by NXP Semiconductors (formerly Freescale). Operating from 1600MHz to 2400MHz, it delivers 20W PEP output power with 27–29 dB typical gain. This monolithic component integrates built-in 50Ω matching circuits, ESD protection and temperature compensation, housed in chassis-mount TO-272 WB-16 package for good thermal performance. Note: This device is obsolete and no longer in production, suitable only for equipment maintenance.

Core Advantages

3-Stage Integrated Amplifier Architecture

Combines pre-driver, driver and power stages on a single chip, providing high gain and simplifying RF layout design.

Built-in 50Ω Impedance Matching

On-chip matching reduces external passive components, shortens development cycles and saves PCB space.

Stable Operation & Protection Circuitry

Works steadily under 3:1 VSWR mismatch. Integrated ESD protection and temperature compensation improve equipment reliability.

Wide Operating Frequency Band

Covers 1600MHz~2400MHz, compatible with legacy GSM, EDGE and CDMA cellular base station systems.

Key Specifications

BrandNXP Semiconductors / Freescale Semiconductor
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / CaseTO-272-16
Mounting TypeChassis Mount
Surface Marking / SilkscreenMW4IC2020NB Marking
Transistor / IC Type3-Stage Wideband LDMOS Power Amplifier IC
Frequency Range1600 MHz to 2400 MHz
Peak Output Power (PEP)20 W PEP
Power Gain27 ~ 29 dB (Typical, depends on frequency & bias)
Operating Drain Voltage (VDD)26 V Nominal, operational range 26V – 28V
Drain Efficiency20 ~ 26% @ 20W PEP
Operating Temperature-10℃ ~ +85℃
Maximum Junction TemperatureUp to +200°C
ImpedanceInput & Output 50Ω Matched (Internal Matching)
VSWR ToleranceStable operation under 3:1 VSWR
Device StatusNo Longer Manufactured (Obsolete)
Packaging FormatTape & Reel / Tray

Typical Applications

  • GSM / EDGE / CDMA cellular base station power amplifier modules
  • Legacy wireless communication repeater & infrastructure maintenance
  • 1.6GHz ~ 2.4GHz RF linear power amplification equipment
  • Repair & aftermarket replacement for old communication hardware

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: Is MW4IC2020NBR1 still in mass production?

A: This model is officially obsolete, No Longer Manufactured. Suitable only for equipment maintenance. New designs need to select alternative active RF power devices.

Q2: What is the internal amplifier stage configuration of MW4IC2020NBR1?

A: It adopts three-stage LDMOS amplifier design, integrating pre-driver, driver and final power stage inside one package.

Q3: Does MW4IC2020NBR1 contain internal impedance matching circuits?

A: Yes, built-in 50Ω input and output matching networks, greatly simplifies external RF circuit design.

Q4: What power supply voltage should be used for this RF amplifier?

A: Nominal VDD voltage is 26V, recommended operating range: 26V ~ 28V DC.

Q5: How to handle heat dissipation for MW4IC2020NBR1?

A: It is chassis mount package. The base metal tab must be tightly installed on heat sink with thermal grease to control junction temperature below 200°C maximum rating.

Q6: Can this device work under antenna mismatch conditions?

A: It maintains stable operation under up to 3:1 VSWR mismatch, but long-term high mismatch will accelerate device aging.

Q7: Are there recommended alternative replacement parts for MW4IC2020NBR1?

A: Different projects have different index requirements. Please send your frequency, power and linearity specifications via inquiry, we can recommend compatible alternative LDMOS RF power transistors.

Q8: What are its main target application frequency bands?

A: Wideband coverage 1600MHz to 2400MHz, mainly used for legacy GSM, EDGE and CDMA communication base station equipment.

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