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HTN8G27S015P
HTN8G27S015P
| Part Number | HTN8G27S015P |
|---|---|
| Manufacturer | WATECH |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 15W LDMOS RF Power Transistor, 700MHz to 2700MHz Frequency Range, DFN 5×5mm Surface Mount Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HTN8G27S015P is a 15W LDMOS RF power transistor made by WATECH, designed for driver and low-power final amplification in 700MHz–2700MHz communication systems. Built on 8th Gen LDMOS technology, it delivers stable gain, great linearity and high PAE under 28V supply voltage. Packaged in compact DFN 5×5mm SMT housing with exposed thermal pad, it features low thermal resistance and excellent mismatch ruggedness, widely used for 4G/5G small cell, WiMAX and wireless loop infrastructure.
Core Advantages
Wide Frequency Coverage 700MHz – 2700MHz
Supports full low-to-2.7GHz spectrum, suitable for multi-band 4G/5G small cell equipment.
8th Generation LDMOS Technology
Optimized process reduces memory effect and maintains linearity for high PAPR digital signals.
DFN 5×5mm Compact SMT Packaging
Small form factor with exposed pad, easy PCB assembly and efficient heat dissipation.
High Load Mismatch Ruggedness
Works reliably under high VSWR without device damage or performance degradation.
Key Specifications
| Brand | WATECH |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | DFN 5×5mm |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | HTN8G27S015P Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor Gen8) |
| Frequency Band | 700 MHz to 2700 MHz |
| Output Power | 15 W (Typical at 28V) |
| Power Gain | 19.1 ~ 24.5 dB |
| Power Added Efficiency (PAE) | 10.6% ~ 13.7% |
| Operating Drain Voltage | 28 V (Nominal) |
| Thermal Resistance | Low Thermal Resistance via Exposed Bottom Pad |
| Operating Temperature | -10°C ~ +85°C |
| Storage Temperature | -65°C ~ +150°C |
| Maximum Junction Temperature | 150°C |
| Packaging Format | Tape & Reel |
Typical Applications
- 700MHz – 2700MHz LTE and 4G/5G base station driver stages and small cell output stages
- Macro-cell, micro-cell, and small cell wireless infrastructure power amplifiers
- Driver stages in Doherty power amplifier configurations for multi-band cellular systems
- WiMAX base stations and Broadband Wireless Access (BWA) systems
- Industrial, Scientific, and Medical (ISM) band high-power RF transmission equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the main difference between HTN8G27S015P and HTN8G27S010P?
A: HTN8G27S015P reaches 15W saturated power, while HTN8G27S010P is rated 10W. They share the same package and frequency band. Select according to your power margin requirement.
Q2: What frequency band is the HTN8G27S015P designed for?
A: Optimized for 700MHz – 2700MHz, covering mainstream cellular low band and mid band up to 2.7GHz.
Q3: What generation LDMOS technology does HTN8G27S015P adopt?
A: “8G” stands for WATECH 8th-generation LDMOS process, with higher efficiency and lower memory effect than earlier generations.
Q4: Can HTN8G27S015P run under continuous wave (CW) mode?
A: It supports pulse & intermittent operation. Adequate thermal design is required for long-term CW use to control junction temperature.
Q5: What alternative parts are compatible with HTN8G27S015P?
A: Direct alternative: HTN8G27S010P (10W). Cross-brand similar 15W wideband LDMOS DFN5×5 transistors are optional. Please contact us to verify drop-in compatibility before replacement.
Q6: How to handle thermal dissipation for this DFN 5×5 device?
A: Solder the exposed thermal pad to PCB copper area with thermal vias connected to ground plane to limit junction temperature.
Q7: Can this transistor be used as Doherty amplifier driver stage?
A: Yes. Its wide frequency range and good linearity make it ideal for driver stages of multi-band Doherty PA for small cell infrastructure.
Q8: What competing devices are available on the market?
A: Other suppliers provide 700–2700MHz 12~15W SMD LDMOS in DFN5×5 package. Differences exist in gain, PAE and ruggedness. We can offer performance comparison data on request.
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