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MRF8S9200NR3
MRF8S9200NR3
| Part Number | MRF8S9200NR3 |
|---|---|
| Manufacturer | NXP Semiconductors / Freescale |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Short Description | N-Channel LDMOS RF Power Transistor, 920MHz~960MHz, OM-780-2 Surface Mount Package |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
MRF8S9200NR3 is an N-channel lateral RF power LDMOS transistor from NXP (Freescale). It operates 920–960MHz for GSM900 base stations, 28V supply with maximum 200W CW peak power. Built-in source-gate matching and ESD protection, ideal for W-CDMA, DPD and Doherty amplifier designs.
Core Advantages
Stable RF Performance
Supports Class AB / Class C operation, withstands 10:1 VSWR mismatch, offering high gain and great efficiency for telecom infrastructure.
Simplified Circuit Design
Integrated input matching reduces peripheral devices. Onboard ESD protection enhances assembly reliability.
Telecom Infrastructure Solution
Optimized for GSM900 power amplifiers and compatible with digital pre-distortion systems.
Key Specifications
| Brand | NXP Semiconductors / Freescale |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD Resources | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | OM-780-2 (Case 2021-03) Flangeless Surface Mount |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | MRF8S9200N Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor Gen8) |
| Frequency Range | 920 MHz to 960 MHz (GSM900 Cellular Band) |
| Output Power | 200 W Peak CW (Typical at 28V / 30V) |
| Average Output Power(W-CDMA) | 58 W Average |
| Operating Drain Voltage | 28 V DC, Maximum Rated 32 V |
| Drain-Source Voltage(Vdss) | ≥ 70 V |
| Gate Voltage Range(Vgs) | -6.0 V ~ +10 V |
| Power Gain | Typ. 19.9 dB @ 940MHz |
| Typical PAE | 37.1% under W-CDMA Test Condition |
| Operating Case Temperature | -65°C ~ +150°C |
| Maximum Junction Temperature(Tj) | 225°C |
| MSL Level | MSL 3 |
| Reflow Peak Temperature | 260°C |
| Packaging Format | Tape & Reel (R3 suffix: 250pcs/reel) / Tray |
| Product Status | Not Manufactured (Obsolete, for maintenance & replacement only) |
Typical Applications
- GSM900 Cellular Base Station RF Power Amplifiers
- Doherty Power Amplifier Main & Peak Stages
- W-CDMA Wireless Infrastructure Equipment
- Class AB & Class C RF Power Amplifier Systems
- Industrial High Power RF Transmission Equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipment Lead Time | Ship within 1-2 working days |
| Global Delivery Options | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T, PayPal, Credit Card, Western Union |
Technical Support
Please submit inquiry form if you need datasheet, pinout diagram, evaluation reference circuit, bulk quotation or compatibility consultation.
Frequently Asked Questions
Q1: What frequency band does MRF8S9200NR3 support?
A1: Operating frequency range is 920MHz ~ 960MHz, designed for GSM900 cellular base station systems. It cannot work for other low frequency bands.
Q2: Is MRF8S9200NR3 still in active production?
A2: This model is obsolete. Available stocks are residual inventory, mainly used for maintenance and replacement of legacy base station equipment. Choose upgraded successor parts for new projects.
Q3: What is the official pin-to-pin replacement from NXP?
A3: MRF8S9200NR3A is the recommended successor. It adopts the same OM-780-2 package with similar electrical parameters; minor circuit tuning is needed after replacement.
Q4: Can I use LDMOS devices from other brands as alternatives?
A4: Ampleon BLF 900MHz series can be used as optional alternatives. Note differences in package, matching impedance and bias conditions. Full RF matching test is required, not plug-and-play directly.
Q5: What maximum VSWR can this transistor withstand safely?
A5: It can sustain 10:1 load VSWR under 200W CW operating condition, improving system stability when antenna mismatches occur.
Q6: What is the difference between CW peak power and W-CDMA average power?
A6: 200W refers to CW peak power, while 58W is average power under W-CDMA modulated signal. Follow modulated power indicators for practical amplifier design.
Q7: Is extra external ESD protection required for this component?
A7: Internal ESD protection is integrated. Standard anti-static operation is still required during SMT assembly to avoid device damage.
Q8: Can this transistor be used for Class D or Class F amplifier design?
A8: The device is optimized for Class AB and Class C. It is not suggested for Class D / Class F designs without complete bench verification.
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