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2SC2630

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2SC2630

Part Number2SC2630
ManufacturerMitsubishi Electric
CategoryDiscrete Semiconductor Products > Transistors > Bipolar (BJT) > RF Transistors
DescriptionNPN Silicon Epitaxial Planar RF Power Transistor, 50W, VHF 150MHz~175MHz, Flange Mount Ceramic Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The 2SC2630 is a high-power NPN silicon epitaxial planar RF transistor manufactured by Mitsubishi Electric. Designed for 12.5V VHF mobile & fixed radio transmitters within 150MHz~175MHz, it delivers up to 50W RF output power with stable gain and high efficiency. Integrated emitter ballast resistors improve anti-mismatch robustness. The ceramic flange mounting package supports direct heatsink installation, widely used for marine radio, land mobile RF amplifiers and amateur radio transmitting equipment.

Core Advantages

Tuned for 12.5V VHF Power Amplifier System

Optimized for 12.5V~13.8V power supply, achieves 50W RF output power under 150MHz–175MHz VHF frequency band.

High Robustness Against Load Mismatch

Built-in emitter ballast resistors effectively prevent thermal runaway and current crowding under antenna VSWR mismatch conditions.

Excellent RF Conversion Efficiency

Stable power gain and high collector efficiency reduce heat generation and power consumption of transmitter modules.

Durable Ceramic Flange Package

T-40E metal-ceramic flange housing features low thermal resistance, easy chassis mounting and reliable heat dissipation.

Key Specifications

BrandMitsubishi Electric
RoHS StatusRoHS Compliant Option Available
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / CaseT-40E (Flange Mount Ceramic Package)
Mounting TypeChassis Mount / Flange Bolt-Down Mounting
Surface Marking / SilkscreenC2630 Marking
Transistor TypeNPN Silicon Epitaxial Planar RF Power Transistor
Frequency Band150 MHz ~ 175 MHz (VHF 2m Amateur Radio Band)
Output Power (Pout)50 W Typical (Vcc = 12.5 V, f = 175 MHz)
Supply Voltage (Vcc)12.5 V DC Nominal, Max VCBO=35V, VCEO=17V, VEBO=4V
Max Collector Current (Ic)14 A
Power Gain (Gp)Typ. 5.2 dB at 175 MHz
Collector EfficiencyTyp. 60% or higher
Maximum Collector Dissipation (Pc)100 W (Tc=25°C, with heatsink)
Operating Junction Temperature-40°C ~ +175°C
Storage Temperature Range-55°C ~ +175°C
Packaging FormatTray / Anti-Static Box

Typical Applications

  • VHF Land Mobile Radio (LMR) power amplifiers and base station transmitters
  • 150MHz – 175MHz commercial marine radio communication systems
  • Amateur radio (Ham Radio 2-meter band) high-power linear amplifiers
  • Commercial FM and VHF wireless transmission equipment
  • Industrial VHF RF power generators and signal amplification modules

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What is the operating voltage for the 2SC2630 transistor?

A: Designed for standard 12.5V DC mobile radio systems. Its maximum VCEO rating is 17V; never exceed this voltage limit.

Q2: What frequency range delivers the best performance for 2SC2630?

A: Tuned for VHF band 150MHz ~ 175MHz. Gain and output power will drop significantly outside this frequency band.

Q3: What typical RF output power can 2SC2630 reach?

A: It reaches typical 50W RF output power under standard test conditions: Vcc=12.5V, f=175MHz.

Q4: What precautions are required for heatsink installation?

A: Bolt the ceramic flange tightly onto a flat heatsink with thermal grease. Poor heat dissipation will cause overheating and permanent failure.

Q5: What alternative parts can replace 2SC2630? What are the differences?

A: Common alternatives: 2SC3147, BLV75/12.
Notice: Pin assignment, input/output impedance and power gain differ. Circuit matching and re-tuning are mandatory for direct substitution.

Q6: Can 2SC2630 withstand antenna load mismatch?

A: Yes. Built-in emitter ballast resistors improve VSWR tolerance. However, long-term severe mismatch will accelerate component aging.

Q7: What is the operating temperature range of 2SC2630?

A: Operating junction temperature: -40°C ~ +175°C. Storage temperature range: -55°C ~ +175°C. Keep sufficient cooling under continuous high-power operation.

Q8: What are the input and output impedance parameters at working frequency?

A: Typical impedance @175MHz: Zin=0.8+j1.2Ω, Zout=1.5-j0.6Ω. This parameter is critical for designing matching networks.

Q9: Can 2SC2630 work for FM broadcast transmitters?

A: It supports low-power FM VHF transmitters within 150–175MHz. For frequencies below 150MHz, power efficiency will decrease obviously.

Q10: Is there any difference between original Mitsubishi 2SC2630 and copy versions?

A: Counterfeit devices often have lower actual output power and weaker anti-mismatch capability. Our stock is original Mitsubishi with stable RF performance.

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