Share to:

SD2933W

Add to quote

SD2933W

Part NumberSD2933W
ManufacturerSTMicroelectronics (ST)
CategoryRF Semiconductors > RF Power Transistors / RF DMOS
DescriptionN-channel RF DMOS Power Transistor, 50V Drain Voltage, 300W Output Power, 150MHz Max Frequency, Hermetic M177 Package, for HF/VHF/Low UHF ISM Amplifier
Stock StatusIn stock
OriginOriginal genuine parts

Product Overview

SD2933W is an N-channel RF DMOS power transistor from STMicroelectronics. Optimized for HF, VHF and low UHF applications, it provides 300W continuous output power. The hermetic M-177 flange package offers outstanding heat dissipation for stable operation in ISM industrial equipment.

Core Advantages

High Power & Stable RF Performance

Minimum 20dB power gain at 30MHz, withstands 4:1 full-phase VSWR, suitable for high-power linear & pulsed RF amplification.

Robust Hermetic Packaging

M-177 screw-mounted metal ceramic hermetic package with low thermal resistance. Junction temperature up to 200°C for continuous operation in harsh environments.

Wide Application Compatibility

Common-source design, ideal for ISM RF heating, VHF base station amplifiers and high-power HF signal amplification circuits.

Key Specifications

BrandSTMicroelectronics
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / CaseM177 Hermetic Ceramic Flange Package (TO-59R variant, screw mounting)
Mounting TypeChassis Mount / Flange Bolt-Down Mounting
Surface Marking / SilkscreenSD2933 W, Marking
Transistor TechnologyN-Channel Enhancement Mode DMOS Silicon MOSFET
Frequency RangeHF / VHF / UHF Spectrum (DC to 150 MHz)
Output Power (Pout)≥300 W (@30MHz, Vdd=50V, Idq=250mA)
Operating Drain Voltage (Vdd)50 V DC (Nominal)
Power Gain (Gp)Typ. ≥20 dB at 30MHz (Typical 23.5dB)
Drain EfficiencyTyp. 60% or higher
Thermal Resistance (Rth(j-c))Ultra-Low Thermal Resistance (0.27°C/W)
Maximum Junction Temperature200°C
Storage Temperature Range-65°C ~ +150°C
Packaging FormatTray / Anti-Static Protective Box
Drain-Source Breakdown Voltage (Vdss)125 V
Continuous Drain Current (Id)40 A
Total Power Dissipation (Pd)648 W (Tc=25°C)
Input Capacitance (Ciss)Approx. 1000 pF @50V
Quiescent Drain Current (Idq)Typical 250 mA
ConfigurationCommon Source
VSWR Tolerance4:1 full phase VSWR, non-destructive
Pin Count5 pins (1:Drain, 2/4/5:Source, 3:Gate)

Typical Applications

  • Industrial, Scientific, Medical (ISM) RF heating equipment
  • VHF radio base station power amplifier
  • High-power HF / VHF large signal amplification system

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Lead TimeShip within 1-2 working days
Transit Time3-7 working days worldwide
Shipping OptionsDHL, UPS, FedEx, EMS
Payment OptionsT/T, PayPal, Credit Card, Western Union

Technical Support

Please use our inquiry form to request datasheets, sample quotation, BOM matching or bulk pricing. We will reply within 24 hours.

Frequently Asked Questions

Q1: What is the alternative replacement model for SD2933W?

A: Pin-compatible alternatives are available based on power demands. Similar ST series: SD2931W, SD2934W. Saturated power and gain differ slightly, circuit matching adjustment is required after replacement.

Q2: Can SD2933W replace RF power transistors from other brands?

A: Direct cross-brand replacement is not recommended without testing. Competitor devices feature different pin definitions and internal impedance. Input/output matching network and bias current need readjustment.

Q3: What is the maximum operating frequency of SD2933W?

A: The maximum working frequency is 150MHz. Optimal performance lies within 30MHz~80MHz HF/VHF band. Gain and efficiency will drop gradually approaching 150MHz.

Q4: Does SD2933W belong to industrial-grade device?

A: Yes. Junction temperature range: -65°C ~ +200°C with hermetic packaging. It meets industrial continuous operation standards and widely applies to industrial ISM equipment.

Q5: What notes for power combining with multiple SD2933W?

A: Select devices with consistent Idq quiescent current to balance power distribution. Provide independent sufficient heat dissipation for each transistor to prevent thermal imbalance.

Q6: Why is SD2933W not suggested for operation above 150MHz?

A: Internal input capacitance restricts high-frequency characteristics. Above 150MHz, power gain and efficiency decline sharply and cannot reach designed output performance.

Q7: What are the differences between SD2933W and SD2934W?

A: Both share identical M177 package and pinout. SD2933W offers typical 300W output; SD2934W supports higher saturated power. Choose according to your equipment maximum power requirements.

[next_prev_pages]
Related Products
Scroll to Top