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AFT20P140-4WNR3
AFT20P140-4WNR3
| Part Number | AFT20P140-4WNR3 |
|---|---|
| Manufacturer | NXP Semiconductors / Freescale |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | Airfast LDMOS RF Power Transistor, Dual-FET symmetric Doherty structure, 1880 MHz ~ 2025 MHz, 24W average output power, OM-780-4 surface mount package. |
| Stock Status | In Stock (Obsolete Original Stock) |
| Origin | Original Factory |
Product Overview
AFT20P140-4WNR3 is an Airfast high-power LDMOS RF transistor from NXP. It adopts integrated symmetric Doherty dual-FET architecture for 1880~2025 MHz LTE Band 3 base station equipment. Under 28V supply, it achieves 24W average output power, stable gain and high efficiency, supporting DPD digital pre-distortion with outstanding VSWR tolerance. This component is obsolete; we provide genuine original stock for equipment maintenance and renovation projects.
Core Advantages
Integrated Doherty Dual-FET Structure
Integrated carrier & peaking transistors inside one package, simplifying Doherty amplifier PCB matching design.
Tuned for LTE Band 3
Optimized for 1880–2025MHz, delivering stable linear performance for W-CDMA and LTE signals.
Strong Load Mismatch Resistance
Withstands high VSWR conditions, suitable for long-term continuous operation of communication base stations.
DPD Friendly Linear Performance
Excellent linearity, well matched with DPD correction systems in wireless infrastructure.
Key Specifications
| Brand | NXP Semiconductors / Freescale |
|---|---|
| RoHS Status | RoHS 3.0 Compliant, e3 Matte Tin Lead Finish |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | OM-780-4 |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | AFT20P140-4WN Marking |
| Transistor Technology | Airfast LDMOS (Lateral Diffused Metal Oxide Semiconductor) |
| Device Structure | Dual-FET (Carrier + Peaking) Symmetric Doherty Architecture |
| Frequency Range | 1880 MHz to 2025 MHz (LTE Band 3) |
| Average Output Power (Pout) | 24W (Test Condition: 28V, 500mA) |
| Drain-Source Breakdown Voltage (Vdss) | 65V |
| Operating Drain Voltage (VDS) | 28 V DC (Nominal) |
| Typical Power Gain (Gp) | 17.6 ~ 17.8 dB |
| Typical Efficiency | 41.2% ~ 41.7% |
| Moisture Sensitivity Level | MSL Level 3, 168 Hours Floor Life |
| Maximum Junction Temperature | +225°C |
| Storage Temperature Range | -65°C ~ +150°C |
| Lifecycle Status | No Longer Manufactured (Obsolete) |
| Packaging Format | Tape & Reel (R3 Suffix, 250 pcs/reel) / Tray |
Typical Applications
- 1880MHz ~ 2025MHz LTE Band3 Macro & Micro cellular base station power amplifiers
- Symmetric Doherty power amplifier carrier & peaking stage
- W-CDMA, LTE wireless communication transmitter equipment
- Maintenance, replacement & upgrade for legacy communication infrastructure
- Broadband wireless access RF power modules
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, bulk pricing and alternative component recommendation, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What frequency band is AFT20P140-4WNR3 suitable for?
A: Optimized for 1880 MHz ~ 2025 MHz, widely adopted in LTE Band 3 cellular base station systems.
Q2: Does AFT20P140-4WNR3 integrate Doherty carrier and peaking transistors?
A: Yes. The internal dual-FET integrates carrier and peaking transistors in one package, simplifying Doherty power amplifier circuit design.
Q3: Is AFT20P140-4WNR3 still in mass production?
A: This model is officially obsolete and no longer manufactured. We supply genuine original leftover stock only for equipment maintenance projects.
Q4: What are common compatible alternatives for AFT20P140-4WNR3?
A: Alternatives need matching frequency, output power and Doherty architecture. Suitable candidates include other NXP Airfast LDMOS. Contact our engineers to receive detailed comparison datasheets.
Q5: Can alternative RF transistors be directly swapped without modifying matching circuits?
A: Direct plug-and-play replacement cannot be guaranteed. Different LDMOS devices have different input/output impedance. RF matching circuit adjustment is generally required; simulation testing is recommended before bulk replacement.
Q6: What does suffix R3 mean for AFT20P140-4WNR3?
A: R3 stands for tape & reel packaging, 250 pieces per reel, designed for automatic SMT production lines.
Q7: What is the difference between discrete LDMOS and this integrated Doherty dual-FET device?
A: AFT20P140-4WNR3 integrates two transistors inside one housing, offering shorter signal paths and smaller PCB footprint. Discrete dual-transistor designs provide higher flexibility but demand extra layout space and additional matching circuits.
Q8: What is the maximum junction temperature of AFT20P140-4WNR3, and are strict heat dissipation measures required?
A: Maximum junction temperature reaches +225°C. Stable heat sink design is strongly required for continuous operation to extend device service life and avoid performance drift.
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