Share to:

BLC9G27LS-151AV

Add to quote

BLC9G27LS-151AV

Part NumberBLC9G27LS-151AV
ManufacturerAmpleon
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs / Power Transistors
Description150W LDMOS Power Transistor, Asymmetric Doherty RF Power Module, 2496MHz to 2690MHz Base Station Power Amplifier, SOT1275-3 Flangeless Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The BLC9G27LS-151AV is a high-efficiency asymmetric Doherty LDMOS RF transistor from Ampleon, targeted at 2496–2690 MHz cellular base station equipment for LTE and 5G sub-6GHz. This device integrates main & peak transistor paths inside one SOT1275-3 flangeless ceramic package, offering 150W peak power gain. Built-in input/output matching simplifies PCB layout, reduces memory effects and delivers stable thermal performance for RRH and Massive MIMO transmit systems.

Core Advantages

Integrated Asymmetric Doherty Architecture

Integrated main and peak power stages streamline RF layout, realizing high drain efficiency above 45% at 8 dB power back-off.

High Efficiency & Great Linearity

Fully optimized for LTE, LTE-A and 5G NR modulation standards, compatible with DPD linearization and features low memory effects.

Built-in Input & Output Matching

On-chip impedance matching cuts external components, shrinks PCB area and lowers total BOM cost.

Strong Robustness & Thermal Stability

Low thermal-resistance flangeless ceramic housing supports continuous high-power operation and withstands severe antenna load mismatch.

Key Specifications

BrandAmpleon
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CAD ResourcesSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / CaseSOT1275-3 Flangeless Ceramic Package
Mounting TypeFlangeless Surface Mount / Direct Heat-Sink Mounting
Surface Marking / SilkscreenBLC9G27LS-151AV Marking
Transistor Technology9th Generation LDMOS (Lateral Diffused MOS)
Frequency Range2496 MHz to 2690 MHz (Band 7 / Band 38 / Band 41)
Peak Output Power (P3dB)Typ. 150 W (Vds = 28V)
Operating Drain Voltage (Vds)28 V DC (Nominal); Vds breakdown ≥65V
Gate Voltage (Vgs Max)-5 V
Quiescent Drain Current (Idq)Typ. 280 mA (Main Path)
Power Gain (Gp)Typ. 13.5 dB at f = 2600MHz
Doherty Drain Efficiency (ηd)Typ. 47% or higher at 8 dB power back-off
Load Mismatch ToleranceSurvives 10:1 VSWR all-phase mismatch (Vds=28V, PL=50W)
Operating Junction Temperature (Tj)-40°C to +200°C
Storage Temperature Range-65°C ~ +150°C
Protection FeatureIntegrated Internal ESD Protection
Packaging FormatTray / Anti-Static Packaging

Typical Applications

  • Macro cellular base station RF power amplifiers (LTE, LTE-Advanced, 5G Sub-6GHz)
  • Remote Radio Head (RRH) and Remote Radio Unit (RRU) transmitter final stages
  • Active Antenna Systems (AAS) and Massive MIMO transceivers (Band 41 / 2.6 GHz)
  • Commercial wireless repeaters, microcell boosters
  • Broadband sub-3GHz industrial RF transmitter modules

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Processing Lead TimeShipped within 1-2 business days
International Transit Time3-7 working days worldwide
Available Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

Please use the inquiry form to request official datasheets, sample requests, stock verification, bulk pricing or schematic support. We will reply to your message within 24 hours.

Frequently Asked Questions

Q1: What frequency band is BLC9G27LS-151AV designed for?

A1: It operates from 2496 MHz to 2690 MHz, compatible with cellular Band 7, Band 38 and Band 41 for 4G LTE and 5G sub-6GHz systems.

Q2: What is the difference between BLC9G27LS-151AV and BLC9G27LS-151AVZ?

A2: Their electrical performance is identical. The only difference is packaging: BLC9G27LS-151AV uses SOT1275-3, while AVZ uses DFM6. They are not pin-to-pin compatible and cannot be directly interchanged.

Q3: What supply voltage is recommended for operation?

A3: Nominal drain voltage Vds = 28V DC. Minimum breakdown voltage ≥65V, offering good surge protection margin.

Q4: Are there alternative Doherty RF transistors for 2.6GHz 150W applications?

A4: Other Ampleon BLC series devices can be considered. Cross-brand alternatives require verification on gain, efficiency and package footprint. Contact us for a compatibility list.

Q5: How much load mismatch can this LDMOS withstand?

A5: It supports full-phase mismatch up to VSWR 10:1 (Vds=28V, PL=50W), providing high robustness for outdoor base station equipment.

Q6: Can this transistor run without external matching circuits?

A6: Internal matching networks are integrated. Minor external tuning components may still be needed to optimize linearity and efficiency under your working conditions.

Q7: How to get datasheets, sample quotation and bulk pricing?

A7: Submit an inquiry via the website form. Our team will send datasheet, stock information and quotations within 24 working hours.

[next_prev_pages]
Related Products
Scroll to Top