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MRF8S18120HSR3
MRF8S18120HSR3
| Part Number | MRF8S18120HSR3 |
|---|---|
| Manufacturer | NXP Semiconductors / Freescale |
| Category | Discrete Semiconductors > Transistors > RF MOSFETs / Power Transistors |
| Description | RF LDMOS Power Transistor, 72W Continuous Output, 120W CW 1dB Compression Point, 1805MHz-1880MHz, 28V, NI-780S Package |
| Stock Status | In stock (Discontinued in 2018, available limited leftover stock) |
| Origin | Original factory |
Product Overview
The MRF8S18120HSR3 is an N-channel enhancement-mode LDMOS RF power FET developed by NXP (formerly Freescale). Optimized for 1805–1880 MHz GSM/GSM-EDGE base station applications. Operates at 28V supply voltage, delivers 72W continuous RF output power, with 120W CW power at 1dB compression point. Packaged in NI-780S (CASE 465A-06) through-hole chassis mount package with internal 50Ω input/output matching.
Core Advantages
Excellent RF Performance
Typical power gain 18.2 dB, drain efficiency up to 49.8%, supports Class AB & Class C operation.
High Ruggedness Design
Supports up to 7.1:1 VSWR mismatch tolerance; built-in ESD protection: HBM Class 2, CDM Class IV.
Reliable Mechanical Structure
NI-780S through-hole package provides outstanding thermal conduction for high-power continuous operation.
Proven Field Application
Widely deployed in legacy cellular base station Doherty amplifier architectures.
Key Specifications
| Brand | NXP Semiconductors / Freescale |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD Resource | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | NI-780S (CASE 465A-06) |
| Mounting Type | Base Chassis Mount / Through-hole |
| Surface Marking / Silkscreen | MRF8S18120HS Markings |
| Transistor Technology | 8th Generation N-Channel LDMOS |
| Frequency Range | 1805 MHz to 1880 MHz (GSM / W-CDMA / LTE Band 3) |
| Continuous Output Power | Typ. 72 W CW (VDD = 28V, f = 1805MHz) |
| 1dB Compression Power | Typ. 120 W CW |
| Operating Drain Voltage | 28 V DC (Nominal), VDSS Max 65V |
| Gate-source Voltage Range | -6.0 V ~ +10 V DC |
| Quiescent Drain Current (IDQ) | 800 mA typical |
| Power Gain | Typ. 18.2 dB at 1805 MHz |
| Drain Efficiency | Typ. 49.8% at 72W CW output |
| VSWR Ruggedness | Withstands up to 7.1:1 load mismatch |
| Thermal Resistance (RθJC) | 0.47 °C/W @72W operating condition |
| Maximum Junction Temperature | 225°C |
| Maximum Case Temperature | -65°C ~ +150°C |
| ESD Classification | HBM Class 2, CDM Class IV |
| Packaging Format | Tape & Reel (Suffix R3: 250 units per reel) |
| Lifecycle Status | Obsolete, Discontinued since 2018 |
Typical Applications
- GSM / GSM-EDGE cellular base station power amplifiers
- Doherty RF power amplifier architecture design
- Legacy 1800MHz wireless communication equipment
- Selected industrial, scientific RF heating equipment (alternative scenario)
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Processing Time | Ship within 1-2 business days |
| Delivery Time | 3-7 working days for international shipping |
| Available Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Options | T/T, PayPal, Credit Card, Western Union |
Technical Support
Please submit inquiries via contact form if you require datasheets, S-parameter files, pin definitions or bulk quotation support. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the difference between continuous 72W power and 120W compression power?
A: 72W is stable continuous rated output; 120W means peak power at 1dB gain compression. Long-term operation at 120W will shorten service life.
Q2: Is MRF8S18120HSR3 still in production?
A: NXP officially discontinued this model in 2018. Only surplus stock is available, no new production.
Q3: Can other suffix versions directly replace MRF8S18120HSR3?
A: Different suffixes stand for different packaging. Only the NI-780S through-hole version can achieve pin-to-pin compatibility.
Q4: What alternatives can be chosen for new projects?
A: Choose updated NXP MRF8S series or GaN devices with matching frequency, voltage and power. There is no universal drop-in replacement, send your circuit demands for recommendations.
Q5: Can SMD RF transistors replace this through-hole NI-780S device?
A: Not directly interchangeable. SMD packages differ greatly in thermal performance, grounding and matching networks. PCB redesign is required.
Q6: Comparison between NXP LDMOS and other brands for 1800MHz band?
A: NXP legacy LDMOS features superior ruggedness and linearity for base station equipment. Competitor products have cost advantages yet differ in VSWR tolerance and long-term stability.
Q7: What thermal standards should be followed during installation?
A: Equip adequate heat sink, keep case temperature below 150°C. Do not exceed the maximum junction temperature of 225°C.
Q8: How to obtain datasheets and simulation data?
A: Send inquiries via the contact form, we will deliver the original datasheet and S-parameter files to your email.
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