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BLM9D2327-26B
BLM9D2327-26B
| Part Number | BLM9D2327-26B |
|---|---|
| Manufacturer | Ampleon |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs / Power Transistors / MMICs |
| Description | Integrated 2-Stage Asymmetric Doherty LDMOS RF Power MMIC, 2300MHz to 2700MHz, 28V, For 4G LTE & 5G Sub-6GHz Small Cell, SOT1462-1 (PQFN-20, 8×8mm) Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
BLM9D2327-26B is Ampleon integrated 2-stage asymmetric Doherty LDMOS RF MMIC for cellular infrastructure. It covers 2300–2700MHz 4G LTE & 5G Sub-6GHz bands, with built-in splitter and combiner. Based on Gen9 N-channel LDMOS, typical gain 27.9dB, P1dB output power 44.8dBm. SOT1462-1 (PQFN-20, 8.0×8.0×2.1mm) package simplifies PCB layout and lowers BOM cost for small cell & Massive MIMO RRU.
Core Advantages
Integrated 2-Stage Doherty MMIC
Onboard driver, carrier/peaking transistors, power splitter and combiner, minimizing external matching circuits.
High Back-off Efficiency
Optimized asymmetric Doherty design, achieving typical drain efficiency of 41.1% under 8dB PAPR operation.
Wide 2.3–2.7GHz Coverage
Supports global mainstream LTE and sub-6GHz 5G bands for unified base station hardware design.
Compact Package & Good Thermal Performance
8×8mm PQFN-20 package with exposed thermal pad (Rth(j-c):3.23~3.34K/W), supporting independent carrier and peaking bias control.
Key Specifications
| Brand | Ampleon |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT1462-1 / PQFN-20, (8.0×8.0×2.1mm) |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | BLM9D2327-26B Marking |
| Transistor Technology | 9th Generation N-Channel LDMOS |
| Frequency Range | 2300 MHz to 2700 MHz (B7 / B38 / B40 / B41 / 5G Sub-6GHz) |
| Operating Drain Voltage (VDS) | 28 V DC (Nominal), Absolute Maximum Rating: 65V |
| Quiescent Current (IDQ, carrier) | 75 mA (Typical Bias Condition) |
| Power Gain (Gp) | Typ. 27.9 dB @ 2500MHz, LTE 20MHz Signal |
| P1dB Compression Output Power | P1dB ≈ 44.8 dBm; 3dB Compression: 44.0–44.8 dBm |
| Drain Efficiency | Typ. 41.1% @ average power 4.9W (8dB PAPR) |
| Source & Load Impedance | 50 Ω System Matched |
| Operating Junction Temperature (Tj) | -40°C to +150°C |
| Storage Temperature Range | -65°C to +150°C |
| Thermal Resistance (Rth(j-c)) | 3.23–3.34 K/W (Depends on power dissipation) |
| Built-in Protection | Internal ESD Protection, Integrated Input Splitter & Output Combiner |
| Packaging Format | Tape & Reel / Anti-Static Tray Packaging |
Typical Applications
- Microcell and Small Cell base station power amplifiers (LTE Band 7, 38, 40, 41)
- 5G Sub-6GHz Massive MIMO active antenna systems (AAS) and remote radio units (RRU)
- Driver and final power amplifier stages in cellular radio equipment (2.3 GHz – 2.7 GHz)
- Commercial wireless repeaters, bi-directional signal boosters, and distribution systems
- High-efficiency broadband industrial RF power amplification equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the difference between BLM9D2327-26B, BLM9D2327-26BX and BLM9D2327-26BZ?
A: Chip parameters and pinout are fully identical and interchangeable. Suffix only means packing spec: 26BZ = 500pcs/reel; 26BX = 2000pcs/long reel.
Q2: Can BLM9D2327-26B replace other Ampleon Doherty MMICs directly?
A: Not universal replacement. Verify frequency, voltage, package and bias circuit first. It works for 2.3–2.7GHz and cannot replace devices for other bands.
Q3: Are there cross-brand alternative Doherty amplifiers?
A: Similar band LDMOS devices exist from other brands, but package, gain and bias differ. PCB redesign and calibration are needed; no plug-and-play substitution.
Q4: Does this MMIC need external power splitter and combiner?
A: No. Splitter and combiner are integrated inside, simplifying PCB design and reducing peripheral components.
Q5: What is the maximum continuous operating junction temperature?
A: Max junction temperature Tj = +150°C. Proper thermal layout and heat dissipation are required to avoid overheating damage.
Q6: Does BLM9D2327-26B have built-in ESD protection?
A: Yes, internal ESD circuit is equipped. Standard anti-static operation is still required during assembly.
Q7: Can carrier and peaking paths use independent bias voltage?
A: Yes. Separate bias pins allow adjustment to optimize efficiency and linearity performance.
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