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RD07MUS2B-T512
RD07MUS2B-T512
| Part Number | RD07MUS2B-T512 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single RF MOSFETs |
| Description | 7W N‑Channel RF Power MOSFET, Mitsubishi Electric, VHF UHF 800MHz, 7.2V supply, built‑in gate protection diode, SLP R‑XQCC‑N3 chip carrier SMT package, for two‑way radio RF power amplifier application. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
RD07MUS2B‑T512 is N‑channel RF power MOSFET manufactured by Mitsubishi Electric, integrated with gate protection diode. Optimized for VHF, UHF and 800 MHz two‑way radio transmitter final‑stage amplifier, delivers stable 7W output under 7.2V supply, supports multi‑band working and excellent high VSWR ruggedness.
Core Advantages
Multi‑band RF Performance
Good electrical performance across 175 MHz, 527 MHz and 870 MHz, suitable for wide‑band two‑way radio equipment.
High Load‑Mismatch Ruggedness
Survives 20:1 full‑phase VSWR without damage under rated test condition, improves field‑use reliability for handheld radio.
Low Operating Voltage
7.2V nominal drain supply, matches lithium‑ion battery powered portable radio system.
Integrated Gate Protection Diode
Built‑in protection diode reduces ESD risk and simplifies peripheral circuit design.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | SLP (Chip Carrier, R‑XQCC‑N3) |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | RD07MUS2B Marking |
| Transistor Type | N‑Channel Silicon RF Power MOSFET (with integrated gate protection diode) |
| Frequency Range | VHF / UHF / 870 MHz |
| Output Power Pout | 7.0 W typical (VDD=7.2V) |
| Drain‑Source Breakdown Voltage Vdss | 25 V Max |
| Gate‑Source Voltage Vgss | -5 V ~ +10 V |
| Drain Current Id | 3 A |
| Channel Dissipation Power Pch | 50 W |
| Drain Supply Voltage VDD | 7.2 V DC Nominal |
| Power Gain Gp | 11.5 ~13.8 dB (frequency dependent) |
| Drain Efficiency | 58% ~65% typical for different frequency points |
| Thermal Resistance Rth(j‑c) | 2.5 °C/W |
| Operating Junction Temperature Tj | -40°C to +150°C |
| Storage Temperature Tstg | -40°C to +125°C |
| Packaging Format | Tape & Reel (-T512 suffix denotes SMT reel tape direction) |
Typical Applications
- VHF / UHF / 800 MHz two‑way portable radio transmitter final power amplifier
- Handheld walkie‑talkie RF power output stage
- Portable battery‑powered RF communication equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Processing Time | Shipped within 1‑2 business days |
| Delivery Lead Time | 3‑7 working days worldwide |
| Shipping Options | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T, PayPal, Credit Card, Western Union |
Technical Support
For datasheet request, sample application, bulk quotation, please submit inquiry form, we will reply you within 24 hours.
Frequently Asked Questions
Q1: What does the suffix “-T512” mean in RD07MUS2B‑T512?
A1: “-T512” is tape‑and‑reel packaging code for SMT mounting. Versions without this suffix share identical electrical performance.
Q2: Difference between RD01MUS1 and RD07MUS2B?
A2: RD01MUS1 is ~1W for pre‑driver stage. RD07MUS2B is 7W final power amplifier device for RF output.
Q3: What supply voltage does RD07MUS2B‑T512 require?
A3: Nominal drain supply VDD is 7.2V DC, matching standard 2‑cell lithium‑ion battery systems.
Q4: How to get datasheet or bulk quotation?
A4: Please submit via quick inquiry form. Our sales team will return documents and pricing within 24 hours.
Q5: Can this device sustain high VSWR antenna mismatch?
A5: Yes. It survives full‑phase VSWR up to 20:1 under rated operating condition. Proper matching network is still required for real‑world application.
Q6: Are there cross‑brand replacement parts?
A6: No direct pin‑to‑pin cross‑brand equivalent. Alternative RF MOSFETs usually need re‑tuning input and output matching circuits.
Q7: Any practical handling notes for this RF MOSFET?
A7: ESD protection is mandatory during assembly. Good thermal contact must be guaranteed to avoid over‑heat damage.
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