Product Overview
| Part Number | RQA0009SXAQSTL‑E |
|---|---|
| Manufacturer | Renesas Electronics |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single RF MOSFETs |
| Description | Silicon N‑Channel Power MOSFET Transistor for 400‑900MHz VHF/UHF Power Amplifiers, 6W Output, SC‑62 Surface Mount Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The RQA0009SXAQSTL‑E is Renesas N‑channel RF power MOSFET for 400‑900 MHz VHF/UHF amplifiers. It delivers 6W output power @520 MHz with high PAE, optimized for low‑voltage battery‑powered equipment. Packaged in compact SC‑62 (SOT‑89 variant) SMD housing with built‑in diode, it features good gain and strong load‑mismatch ruggedness for land mobile radios and wireless transmitter modules.
Core Advantages
High RF Performance
18 dB typical gain, up to 65% PAE at 520 MHz, lowers power consumption and thermal stress for VHF/UHF amplifier designs.
Low‑Voltage Battery Operation
Supplies 1.5‑7.5 V, recommended 4.8‑6 V, ideal for handheld portable radios and battery‑driven RF modules.
Compact SMD Package
SC‑62 (SOT‑89 variant) 3‑pin package with internal diode, saves PCB space for SMT radio layouts.
Excellent Ruggedness
High VSWR withstand capability, protects power stage against antenna mismatch and load fault conditions.
Key Specifications
| Brand | Renesas Electronics |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free (‑E Suffix) |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | SC‑62 (SOT‑89-3 variant) |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | SX5 Marking |
| Transistor Type | N‑Channel Silicon Enhancement‑Mode RF Power MOSFET |
| Operating Frequency Range | Typ 465‑520 MHz, usable up to 900 MHz |
| Drain‑Source Breakdown Voltage (Vdss) | Min 16 V |
| Continuous Drain Current (Id) | Max 3.2 A |
| Gate‑Source Voltage (Vgss) | ±20 V Max |
| Supply Voltage Range | 1.5‑7.5 V, Recommended 4.8‑6 V |
| Output Power Pout @520MHz, Vds=6V | +37.8 dBm (~6 W) |
| Typical Power Gain | 18 dB |
| Max Power‑Added Efficiency (PAE) | 65 % |
| Quiescent Drain Current (Idq) | 180‑300 mA |
| Operating Junction Temperature (Tj) | ‑30°C to +100°C |
| Packaging Format | Tape & Reel (STL suffix denotes standard SMT tape direction) |
Typical Applications
- Land Mobile Radio (LMR) systems and professional two‑way portable transceivers
- VHF / UHF band final and driver stage power amplifiers
- Public safety, marine, and commercial wireless radio communication equipment
- Industrial, Scientific, and Medical (ISM) band high‑power telemetry and data transmitters
- Smart metering gateways and remote RF communications infrastructure
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does suffix “STL‑E” mean in RQA0009SXAQSTL‑E?
A: “STL” means tape‑and‑reel for automatic SMT assembly. “-E” stands for RoHS lead‑free. It shares identical electrical specs with RQA0009SXAQS / RQA0009SXTL‑E series.
Q2: What is the physical package for this RF MOSFET?
A: SC‑62 (SOT‑89 variant), 3‑pin SMD package with integrated protection diode.
Q3: What frequency and power level can this device achieve?
A: Typical 6 W output at 465‑520 MHz; usable up to 900 MHz with power derating. Recommended supply: 4.8‑6 V.
Q4: Can I use other brand RF MOSFET as cross‑brand replacement?
A: Cross‑brand substitution is not drop‑in. Match Vdss, frequency, power rating, package and impedance. Circuit re‑tuning is mandatory even for similar‑spec parts.
Q5: Are there pin‑to‑pin compatible alternative part numbers?
A: Check other Renesas SC‑62‑packaged RF MOSFETs. No fully drop‑in public replacement. Compare Id, Vdss, gain and PAE before PCB revision.
Q6: What are key design notes when using RQA0009SXAQSTL‑E?
A: This is RF‑only transistor, not for general‑purpose switching. Implement proper impedance matching, Idq biasing and thermal design for stable amplifier performance.
Q7: How can I get datasheet and volume quotation?
A: Submit your request via Quick Inquiry form. We provide original datasheet, stock confirmation and bulk price within 24 hours.

