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RD30HVF1-101

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RD30HVF1‑101

Part NumberRD30HVF1-101
ManufacturerMitsubishi Electric
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs
Description30W 175MHz Silicon N-Channel MOSFET Power Transistor, SMD Ceramic Package, ESD Sensitive Device.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The RD30HVF1‑101 is a Mitsubishi Electric N‑channel silicon RF MOSFET for VHF power amplifiers up to 175 MHz. Delivering 30 W output power, 14.7 dB gain and 60% typical drain efficiency at 12.5 V, it comes in SMD Ceramic package. This is an ESD‑sensitive device requiring anti‑static handling. Ideal for land‑mobile, marine and amateur radio transmitters.

Core Advantages

High Power & Efficiency

30 W output at 175 MHz with 60% typical drain efficiency, reduces cooling requirements.

High Gain Performance

14.7 dB typical power gain, lowers drive‑stage power demand.

Good Thermal Performance

TO‑220 metal‑tab package enables easy heatsink mounting for reliable operation.

Stable RF Performance

Robust silicon MOSFET design with low intermodulation distortion for radio‑communication applications.

Key Specifications

BrandMitsubishi Electric
RoHS StatusRoHS Compliant / Lead‑Free
EDA / CADPCB Footprint & 3D Model Available upon Request
Warranty1‑Year Standard Quality Warranty
Package / CaseSMD Ceramic
Mounting TypeSMD
Surface Marking / SilkscreenRD30HVF1 Marking
Transistor TypeSilicon N‑Channel MOSFET
Frequency RangeVHF Band (up to 175 MHz)
Output Power (Pout)30 W Typ. (@ f = 175 MHz, Vdd = 12.5V, Pin = 1.0W)
Power Gain (Gp)14.7 dB Typ. (@ 175 MHz)
Drain Efficiency (ηD)60% Typ. (@ 175 MHz)
Drain‑Source Voltage (Vdss)30 V DC Max
Operating Drain Voltage (Vdd)12.5 V DC Typ. (Max 30V)
Gate‑Source Voltage (Vgss)±20 V DC Max
Channel Dissipation (Pch)75 W Max (@Tc=25°C)
Thermal Resistance (Rth j‑c)2.0 ℃/W
Operating Channel Temperature+175°C Max
Storage Temperature-40℃ ~ +175℃
Pin Assignment1:Drain, 2:Source, 3:Gate
Typical Test ConditionVdd=12.5 V, Pin=1.0W, Frequency=175MHz, Tc=25℃
Compatible PartsRD30HVF1‑100 (Non‑RoHS version, identical electrical performance)
Alternative PartRD30HUF1‑101 (UHF‑band, 520MHz, NOT interchangeable)

Typical Applications

  • VHF Land Mobile Radio (LMR) power amplifier output stages
  • Commercial two‑way radios, walkie‑talkies, and mobile transceivers
  • Marine VHF radiotelephone equipment and emergency transmitters
  • Amateur radio (Ham Radio) 2‑meter band transmitters and amplifiers
  • Industrial RF signal generators and test equipment drivers

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1‑2 business days
Delivery Time3‑7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What is the primary operating frequency for the RD30HVF1‑101?

A: Optimized for VHF band up to 175 MHz, widely used in land‑mobile and marine radio systems.

Q2: What is the standard operating voltage for RD30HVF1‑101?

A: Typical drain voltage Vdd is 12.5 V DC, ideal for 12 V battery‑powered mobile radios. Absolute maximum Vdss is 30 V.

Q3: What package does RD30HVF1‑101 use?

A: SMD Ceramic package, supports heatsink mounting.

Q4: What does the suffix “‑101” mean?

A: Suffix ‑101 indicates RoHS‑compliant lead‑free packaging. The lot marking carries letter “G”. RD30HVF1‑100 is lead‑containing non‑RoHS variant. Both share identical electrical performance and are interchangeable.

Q5: Can RD30HVF1‑101 be replaced by RD30HUF1‑101?

A: No. RD30HVF1‑101 is for 175 MHz VHF; RD30HUF1‑101 is for 520 MHz UHF. Different frequency characteristics, cannot be interchanged directly.

Q6: What is the compatible replacement for RD30HVF1‑101?

A: RD30HVF1‑100 is direct compatible counterpart, same electrical specifications, non‑RoHS version.

Q7: Are there any SMD equivalent for RD30HVF1‑101?

A: No, this part is only available in TO‑220 through‑hole form‑factor. There is no surface‑mount alternative from Mitsubishi Electric.

Q8: Under what conditions are datasheet parameters tested?

A: Typical values are measured at Vdd=12.5 V, Pin=1.0W, 175 MHz, Tc=25°C. Real‑world performance may vary by circuit design.

Q9: Is RD30HVF1‑101 an ESD‑sensitive device?

A: Yes, it is ESD‑sensitive. Please follow anti‑static handling rules during assembly and soldering.

Q10: How can I get datasheets, samples, bulk pricing or stock status?

A: Please submit our Quick Inquiry form for datasheets, application notes, stock check and volume quotations.

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