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RD70HVF1-101
RD70HVF1‑101
| Part Number | RD70HVF1-101 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 70W 175MHz Silicon N‑Channel MOSFET Power Transistor, High‑Power VHF/UHF Radio Module / Transistor. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The RD70HVF1‑101 is a Mitsubishi Electric N‑channel silicon RF MOSFET, optimized for VHF/UHF high‑power transmitters up to 520 MHz. It delivers 70W output power at 175 MHz (12.5V supply) with >60% drain efficiency, ideal for land mobile radio, marine comms and public‑safety radio systems.
Core Advantages
High Output Power & Drain Efficiency
70W output at 175 MHz, 50W at 520 MHz, high efficiency cuts power dissipation and heatsink requirements.
High Gain Performance
High power gain (10.6 dB @175 MHz, 7.0 dB @520 MHz), reduces pre‑driver drive power demand.
Superior Thermal Management & Reliability
Low‑thermal‑resistance flange‑mount ceramic package supports continuous‑duty operation in harsh environments.
Low Intermodulation & Stable Operation
Low intermodulation distortion, clean signal output and stable performance over wide temperature ranges.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | Flange‑Mount Ceramic Power Transistor Package |
| Mounting Type | Chassis Flange Mount / Screw Mount |
| Surface Marking / Silkscreen | RD70HVF1 Marking |
| Transistor Type | Silicon N‑Channel MOSFET |
| Frequency Range | VHF/UHF Band (up to 520 MHz) |
| Output Power (Pout) | 70 W Typ. (@ f = 175 MHz, Vdd = 12.5V, Pin = 6W); 50 W Typ. (@ f = 520 MHz, Vdd = 12.5V, Pin = 10W) |
| Power Gain (Gp) | > 10.6dB Typ. (@ 175MHz); >7.0dB Typ. (@ 520MHz) |
| Drain Efficiency (ηD) | > 60% Typ. (@ 175 MHz); >55% Typ. (@520 MHz) |
| Drain‑Source Voltage (Vdss) | 30 V DC Max |
| Gate‑Source Voltage (Vgss) | ±20 V DC Max |
| Operating Drain Voltage (Vdd) | 12.5 V DC Typ. (Absolute Maximum 30V) |
| Channel Dissipation (Pch) | 150 W Max |
| Operating Channel Temperature | +175°C Max |
| Storage Temperature | -40°C ~ +175°C |
| Typical Test Condition | Vdd=12.5V, Pin=6.0W, Frequency=175MHz, Tc=25°C |
| Compatible Parts | RD70HVF1‑100 (Non‑RoHS version, identical electrical performance) |
Typical Applications
- High‑power VHF Land Mobile Radio (LMR) mobile transceivers and base station repeaters
- Public safety, police, emergency service, and commercial two‑way communication systems
- Marine VHF radiotelephone equipment and coastal broadcast transmitters
- Amateur radio (Ham Radio) 2‑meter band high‑power linear amplifiers
- Industrial RF generators, plasma driver units, and signal power amplification
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the difference between RD30HVF1‑101 and RD70HVF1‑101?
A: Both are Mitsubishi VHF MOSFETs. RD70HVF1‑101 delivers 70W output for high‑power transmitters, while RD30HVF1‑101 offers 30W for medium‑power drive stages.
Q2: What is the standard operating voltage for RD70HVF1‑101?
A: Typical Vdd is 12.5 V DC. Absolute maximum Vdss is 30 V; do not exceed to avoid device damage.
Q3: Does RD70HVF1‑101 require special heatsinking?
A: Yes. Use a proper heat sink with thermal grease/pad to keep junction temperature below 175°C for reliable continuous operation.
Q4: How to get datasheets, PCB guides or bulk quotes?
A: Submit your request via our Quick Inquiry form; we will reply within 24 hours.
Q5: What is the difference between RD70HVF1‑101 and RD70HVF1‑100?
A: RD70HVF1‑101 is RoHS‑compliant lead‑free. RD70HVF1‑100 is tin‑lead finish. Electrical specs, package and pinout are identical.
Q6: Can RD70HVF1‑101 operate at 520 MHz?
A: Yes. At 520 MHz, typical performance: 50 W output, 7.0 dB gain, 55% efficiency, follow datasheet test conditions.
Q7: Is RD70HVF1‑101 pin‑compatible with other Mitsubishi RF MOSFETs?
A: It shares the same flange‑mount footprint with RD30HVF1‑101 & RD50HVF1‑101. Circuit design needs adjustment due to different power ratings.
Q8: What is the maximum input drive power?
A: Typical drive power is 6 W at 175 MHz. Max input power is 10 W; over‑drive will burn the device.
Q9: Can RD70HVF1‑101 directly replace RD70HHF1?
A: No. RD70HHF1 has 50 V Vdss, while RD70HVF1‑101 only supports max 30 V. Voltage circuits must be re‑evaluated.
Q10: Is RD70HVF1‑101 ESD‑sensitive?
A: Yes. Apply standard ESD protection during handling, assembly and soldering to prevent static damage.
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