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BLF8G10LS-160,118

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BLF8G10LS-160,118

Part NumberBLF8G10LS‑160,118
ManufacturerAmpleon / NXP Semiconductors
CategoryDiscrete Semiconductor Products > Transistors – FETs, MOSFETs – RF
DescriptionPower LDMOS Transistor, 160W CW, 35W Average (W‑CDMA), 920 MHz to 960 MHz, 30V, SOT502B Package, Tape & Reel, Discontinued.
Stock StatusIn Stock
OriginOriginal Factory
Product StatusDiscontinued (PCN published September 2021)

Product Overview

The BLF8G10LS‑160,118 is a discontinued Gen8 LDMOS RF transistor from Ampleon (formerly NXP). Optimized for 920‑960 MHz base‑station applications, it delivers 160 W CW saturated power and 35 W average power for W‑CDMA multi‑carrier operation at 30 V. It features integrated input matching, 10:1 VSWR ruggedness, and comes in SOT502B ceramic flangeless package, supplied in Tape & Reel (suffix 118).

Core Advantages

High Efficiency & Superior Gain

Gen8 LDMOS process delivers high PAE and gain, lowering power consumption and cooling demands.

Integrated Internal Matching

Built‑in input matching simplifies circuit design and saves PCB space.

High Ruggedness & Reliability

Withstands 10:1 VSWR mismatch at all phases for stable base‑station operation.

Advanced Thermal Management

Low‑thermal‑resistance SOT502B package enables effective heat dissipation for long service life.

Low Memory Effect

DPD‑optimized, ideal for multi‑carrier W‑CDMA transmitter designs.

Key Specifications

BrandAmpleon / NXP Semiconductors
RoHS StatusRoHS Compliant / Lead‑Free
EDA / CADPCB Footprint & 3D Model Available upon Request
Warranty1‑Year Standard Quality Warranty
Package / CaseSOT502B (Ceramic Flangeless)
Mounting TypeChassis Mount / Flange Mount
Surface Marking / SilkscreenBLF8G10LS‑160 Marking
Transistor TypeLDMOS N‑Channel RF Power Transistor
Operating Frequency Range920 MHz to 960 MHz
Output Power (Pout)160 W CW (Continuous‑Wave); 35 W PL(av) Average Power (W‑CDMA Modulated Signal)
Drain‑Source Voltage (Vds)30 V DC Test Condition (Max 65V Vdss)
Quiescent Drain Current (IDQ)1100 mA
Power Gain (Gps)19.7 dB Typ. @ 960 MHz
Drain Efficiency29‑30% Typ. (W‑CDMA Modulated); High Efficiency for CW Operation
ACPR (Adjacent Channel Power Ratio)≤‑38 dBc (2‑carrier W‑CDMA test condition)
Junction Temperature (Tj)200 °C (Max)
Storage Temperature-65 °C ~ +150 °C
Thermal Resistance Rth(j‑c)0.5 K/W
Reference Case Temperature80 °C
Packaging TypeTape & Reel (118 Suffix)

Typical Applications

  • GSM, EDGE, W‑CDMA, and LTE Wireless Base Station Power Amplifiers (900 MHz Band)
  • Cellular Repeater Systems and Small Cell Transmission Equipment
  • Industrial, Scientific, and Medical (ISM) High‑Power RF Amplifiers
  • Avionics, PMR, and Tactical Radio Communications Infrastructure
  • RF Power Generators and Industrial Heating Systems

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1‑2 business days
Delivery Time3‑7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What is the operating frequency range of BLF8G10LS‑160,118?

A: The operating frequency range is 920 MHz‑960 MHz, optimized for W‑CDMA multi‑carrier base‑station applications.

Q2: What does suffix ,118 stand for?

A: Suffix ,118 = Tape & Reel packaging for SMT assembly. Suffix ,115 is bulk tray for manual mounting. Electrical specifications are identical for both suffixes.

Q3: What is the correct package for BLF8G10LS‑160,118?

A: Official package is SOT502B (ceramic flangeless flat‑lead). Some documents incorrectly mark it as SOT‑502A / SOT1244B, those are not correct.

Q4: What are the replacement parts for BLF8G10LS‑160,118?

A: Same‑die direct alternative: BLF8G10LS‑160,115 (bulk tray). For new designs, please refer to Ampleon’s latest Gen9 LDMOS series. Note: Pin‑to‑pin compatible third‑party parts require re‑tuning matching networks.

Q5: What is the difference between 160 W CW and 35 W W‑CDMA average power?

A: 160 W is CW saturated output power under continuous‑wave test condition. 35 W is the average output power for real‑world multi‑carrier W‑CDMA modulated signals in base‑station working scenarios.

Q6: Can I use other‑brand LDMOS as drop‑in replacement?

A: Drop‑in replacement is not recommended. Different manufacturers have different input/output impedance. Matching circuits must be re‑tuned. Sample validation is mandatory before mass production.

Q7: Why is BLF8G10LS‑160,118 marked discontinued?

A: Ampleon released PCN in September 2021, this Gen8 device is phased out. Stock is limited, new projects should adopt newer generation parts.

Q8: What is the recommended Vds supply voltage and IDQ for BLF8G10LS‑160,118?

A: Recommended test Vds = 30 V, maximum Vdss = 65 V. Quiescent drain current IDQ = 1100 mA.

Q9: How to get datasheet, S‑parameters or quotation?

A: Please submit an inquiry via our contact form. We will provide datasheet, S‑parameter files and pricing information.

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