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MGFC45B3436B
MGFC45B3436B
| Part Number | MGFC45B3436B |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products / RF & Microwave Components > GaAs Power FETs |
| Description | 30-Watt S-Band Internally Matched GaAs Power FET, 3.4 GHz to 3.6 GHz, Hermetic Metal-Ceramic Flange Package (GF-60). |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
MGFC45B3436B is Mitsubishi Electric Class‑AB internally‑matched GaAs power FET for 3.4‑3.6 GHz S‑Band. Typical saturated output power reaches 30W. Built‑in 50‑Ohm input‑output matching reduces external tuning parts. GF‑60 hermetic metal‑ceramic flange package offers good thermal performance, suitable for radar, SATCOM and microwave communication transmit systems.
Core Advantages
Internally‑Matched 50‑Ohm RF Ports
Integrated 50‑Ohm matching network for input and output, simplifies RF design and shortens development cycle.
High Output Power & Linear Gain
30W typical saturated output power, typical 11dB linear gain, ideal for high‑power S‑band transmit amplifiers.
Low Distortion S‑Band Performance
Class‑AB operation,‑45dBc typical ACP, excellent linearity and stable high‑frequency characteristics.
Hermetic GF‑60 Package
Low‑thermal‑resistance hermetic flange package, reliable heat dissipation and stable performance under harsh conditions.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | Hermetic Metal-Ceramic Flange Package (GF-60) |
| Mounting Type | Chassis Mount / Bolt-Down Flange Mount |
| Surface Marking / Silkscreen | 3436B |
| Operating Frequency Range | 3.4 GHz to 3.6 GHz (S-Band) |
| Saturated Output Power (Po SAT) | 30 W (Typical) |
| Linear Power Gain (GLP) | > 10.0 dB (Typical 11.0 dB at 3.4-3.6 GHz) |
| Power-Added Efficiency (PAE) | > 35% (Typical) |
| Recommended Operating VDS | 12 V (Typical Operating), 15 V (Absolute Max Rating) |
| Gate-Source Voltage (VGS) | -5 V to 0 V (Operating Range) |
| Operating Channel Temperature (Tch) | Up to +175°C |
| Gate Cutoff Voltage (VGS(off)) | -4.5 V (Typical) |
| Adjacent Channel Leakage Power (ACP) | -45 dBc (Typical) |
| Max Drain Current (ID) | 10 A (Absolute Maximum Rating) |
| Storage Temperature Range | -65 ℃ ~ +175 ℃ |
Typical Applications
- S-Band Radar Systems (Air Traffic Control, Weather, and Marine Radars)
- Satellite Communications (SATCOM) Earth Station Transmitters
- Wireless Broadband and WiMAX Base Station Power Amplifiers
- Point-to-Point and Point-to-Multipoint Microwave Radio Links
- High-Power RF Test and Measurement Instrumentation
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the operating frequency of MGFC45B3436B?
A: It works on S‑Band, 3.4 GHz to 3.6 GHz.
Q2: Does this GaAs FET need external matching circuit?
A: No. Built‑in 50‑Ohm input‑output matching, connects directly to standard 50‑Ohm transmission lines.
Q3: What mounting requirement for thermal dissipation?
A: Bolt the metal flange firmly onto flat qualified heat sink with thermal interface material to keep safe channel temperature under continuous high‑power work.
Q4: Where to get datasheet, S‑parameter and bulk quotation?
A: Please submit Quick Inquiry form for datasheet, S‑parameter files, stock status and bulk price.
Q5: What are absolute maximum voltage ratings?
A: Max VDS 15V, Max VGS ‑15V. Recommended VDS is 12V, VGS operating range:‑5V ~ 0V. Do not exceed absolute ratings.
Q6: Is MGFC45B3436B ESD‑sensitive?
A: Yes, GaAs FET is ESD sensitive. Anti‑static wrist strap, anti‑static tray and mat are required during handling to prevent gate damage.
Q7: Are there pin‑compatible replacement parts?
A: Parts with GF‑60 package, 3.4‑3.6 GHz band and 30W power can be alternatives. Verify VDS, gain and PAE before replacement. Other packages need circuit modification.
Q8: What is the difference for MGFC45B series suffix variants?
A: Suffix differs mainly in RoHS and production screening. Same pinout, package and electrical specs, direct pin‑to‑pin interchangeable.
Q9: What are channel and storage temperature limits?
A: Max operating channel temperature +175℃; storage temperature:‑65℃ ~ +175℃. Good heat dissipation is required for long‑time high‑power operation.
Q10: What operation class does this device adopt?
A: Class‑AB, balances efficiency and linearity for radar and communication power amplifiers.
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