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RD35HUF2-T5105
RD35HUF2-T5105
| Part Number | RD35HUF2-T5105 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Category | Discrete Semiconductor Products / Transistors > RF FETs, MOSFETs |
| Description | 35W‑Class Silicon Enhancement‑Mode MOSFET Power Transistor, 175 MHz to 530 MHz VHF/UHF Band, 12.5V Supply, TO‑220S Molded Package, Integrated Gate Protection Diode. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The RD35HUF2‑T5105 is Mitsubishi Electric’s N‑channel enhancement‑mode RF MOSFET with integrated gate protection diode, designed for 175‑530 MHz VHF/UHF radio systems. It delivers typical 43‑45 W RF output under 12.5 V supply, featuring high drain efficiency and good device stability. TO‑220S SMD package supports SMT assembly, suitable for land mobile radio and RF power amplifier modules.
Core Advantages
Optimized 175 MHz‑530 MHz VHF/UHF Frequency Coverage
Specially designed for two‑way radio communication infrastructure and mobile radios operating in the commercial VHF and UHF bands, ensuring consistent power gain and performance stability.
High RF Output Power at 12.5V Nominal Supply
Delivers typical 43‑45 Watts RF output from standard 12.5V vehicular DC supply, no complex boost converter needed.
High Drain Efficiency & Low Thermal Resistance
Optimized gate‑channel structure provides high drain efficiency 60%‑72%, reduces thermal stress for long‑time high‑duty‑cycle transmit operation.
Built‑in Gate Protection Diode
Integrated gate protection diode improves ESD tolerance, enhances device reliability during assembly and operation.
Compact Surface‑Mount TO‑220S Package
Low‑profile TO‑220S surface‑mount molded package, supports automated SMT placement with excellent thermal dissipation performance.
Key Specifications
| Brand | Mitsubishi Electric |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | TO‑220S / HPM |
| Mounting Type | Surface Mount (SMD / SMT) |
| Surface Marking / Silkscreen | RD35HUF2 |
| Transistor Technology | MOSFET (N‑Channel Enhancement‑Mode, Integrated Gate Protection Diode) |
| Operating Frequency Range | 175 MHz to 530 MHz (VHF/UHF Band) |
| Output Power (Pout) | 43‑45 W (Typical, VDD = 12.5V) |
| Power Gain (Gp) | > 7.7 dB (Typical) |
| Drain Efficiency (ηD) | 60% ~ 72% (Typical) |
| Drain‑Source Voltage (VDSS) | 40 V (Max Rating), 12.5V (Nominal Operating) |
| Gate‑Source Voltage (VGSS) | -5 V to +10 V |
| Max Drain Current (ID) | 10 A |
| Channel Dissipation (Pch) | 166 W (Tc=25℃) |
| Thermal Resistance (Rth j‑c) | 0.9 ℃/W |
| Operating Channel Temperature (Tch) | Up to +175°C |
| Storage Temperature Range | -40℃ ~ +175℃ |
Typical Applications
- Land Mobile Radio (LMR) and Public Safety Radio Transceivers
- VHF / UHF Commercial Two‑Way Radio Power Amplifiers
- Mobile Transmitters for Automotive Communications
- Marine and Aeronautical Radio Transceivers
- Industrial, Scientific, and Medical (ISM) RF Power Amplifiers
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What frequency band does RD35HUF2‑T5105 support?
A: It is designed for 175 MHz‑530 MHz VHF/UHF RF power amplification for radio communication systems.
Q2: What is the recommended operating supply voltage?
A: Nominal drain operating voltage 12.5V, absolute maximum VDSS rating 40V, suitable for battery‑powered mobile radio equipment.
Q3: What does suffix ‑T5105 mean? Difference with base model RD35HUF2?
A: Base part number: RD35HUF2. Suffix ‑T5105 indicates tape & reel packaging, 500 units per reel. Electrical characteristics are identical, only packaging differs.
Q4: What is the package type of RD35HUF2‑T5105?
A: TO‑220S molded SMD surface‑mount package for SMT assembly, good thermal contact to PCB ground plane. Not compatible with through‑hole TO‑220 footprint.
Q5: Does this device include built‑in protection?
A: Yes, integrated gate protection diode, improves ESD resistance during assembly and field operation.
Q6: Are there pin‑to‑pin drop‑in alternative replacements?
A: No direct pin‑compatible substitute. When replacing, match frequency range, output power, supply voltage and package. RF matching circuit re‑tuning is required.
Q7: How to get datasheet, evaluation info or bulk quotation?
A: Submit quick inquiry for datasheet, test reference, stock check and volume pricing support.
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