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MD7P19130HSR3
MD7P19130HSR3
| Part Number | MD7P19130HSR3 |
|---|---|
| Manufacturer | NXP Semiconductors / Freescale |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | 1930‑1990 MHz High‑Efficiency RF LDMOS Power Transistor, 130W Peak Power, 28V, NI‑780S‑4 Package, Tape & Reel. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The MD7P19130HSR3 is a 7th‑generation RF LDMOS power transistor from NXP (formerly Freescale). Designed for 1930‑1990 MHz PCS cellular base‑station systems, it delivers 130 W peak output power at 28 V supply. The air‑cavity ceramic SMD package provides reliable thermal dissipation for CW and multi‑carrier amplifier applications.
Core Advantages
High Efficiency & Linearity
Optimized drain efficiency and linearity for LTE, W‑CDMA and GSM/EDGE digital modulation.
Integrated ESD & Gate Protection
Built‑in ESD protection enhances stability and load‑mismatch tolerance for base‑station operation.
Target PCS Frequency Band
Covers 1930‑1990 MHz cellular band, simplifying input‑output matching for transmit amplifiers.
Excellent Thermal Performance
NI‑780S‑4 ceramic SMD package with low thermal resistance, supporting continuous high‑power operation.
Key Specifications
| Brand | NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | NI‑780S‑4 Air‑Cavity Ceramic Package |
| Packaging Type | Tape & Reel (R3) |
| Mounting Type | Surface Mount (SMD / SMT) |
| Surface Marking / Silkscreen | MD7P19130HS / NXP Logo |
| Transistor Type | RF N‑Channel LDMOS FET |
| Frequency Range | 1930 MHz to 1990 MHz |
| Peak Output Power (Pout) | 130 W |
| Drain‑Source Voltage (Vdss) | 65 V (Max) |
| Operating Drain Voltage (Vdd) | 28 V (Nominal) |
| Power Gain | 18.5 dB to 21.5 dB (Typical) |
| Drain Efficiency | 30 % (Typical) |
| Thermal Resistance Rth‑jc | 0.31 ℃/W (Typical) |
| Operating Junction Temperature | -65°C to +225°C |
| Storage Temperature Range | -65 ℃ ~ +150 ℃ |
Typical Applications
- Cellular Base Station Transceivers (BTS) and Remote Radio Heads (RRH)
- LTE, W‑CDMA, GSM/EDGE, and CDMA2000 Power Amplifiers
- Doherty High‑Efficiency Transmitter Configurations
- Microcell and Picocell Wireless Communications Infrastructure
- Industrial RF Power Generators and Broadband RF Amplifiers
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the operating frequency range of MD7P19130HSR3?
A: 1930‑1990 MHz, optimized for PCS cellular base‑station equipment.
Q2: Difference between MD7P19130HS, MD7P19130HSR3 and MD7P19130HSR5?
A: Same die and package, pin‑to‑pin compatible. HS: base part number; R3:250‑unit reel; R5:50‑unit small reel, only packaging differs.
Q3: Can MD7P19130HR3 replace MD7P19130HSR3?
A: Not direct drop‑in replacement. HR version uses different internal matching, circuit retuning is required.
Q4: Is this device suitable for Doherty amplifier?
A: Yes. Good linearity and phase performance work for both main and peak amplifier in Doherty transmitters.
Q5: Are there pin‑compatible alternative LDMOS parts?
A: Cross‑reference parts require full lab validation on gain, power, bias and matching. Direct substitution is not guaranteed.
Q6: What marking is printed on component body?
A: Marking: MD7P19130HS. R3/R5 suffix only appears on reel label, not printed on device.
Q7: How to obtain datasheet, footprint and bulk price?
A: Submit quick inquiry for official datasheet, CAD footprint, stock and bulk quotation.
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