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EGN21A045IV
EGN21A045IV
| Part Number | EGN21A045IV |
|---|---|
| Manufacturer | Eudyna Devices / Sumitomo Electric Device Innovations (SEDI) |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | GaN HEMT RF Power Transistor, 45W, 2100‑2200MHz, IV SMT Ceramic Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The EGN21A045IV is a 45W GaN‑on‑SiC HEMT RF power transistor from Eudyna (SEDI). Optimized for 2100‑2200 MHz L‑band, it delivers high gain and 35% typical PAE for LTE/W‑CDMA base‑station amplifiers. High‑voltage 50V operation, low thermal resistance, designed for compact and reliable RF front‑end systems.
Core Advantages
High Efficiency & Power Density
GaN‑on‑SiC substrate provides high power‑added efficiency compared with conventional silicon LDMOS devices.
Target L‑Band Performance
Optimized for 2100‑2200 MHz, stable gain and output power for cellular infrastructure amplifier design.
Good Thermal Properties
Low channel‑to‑case thermal resistance ensures stable performance under continuous high‑power operation.
IV SMT Ceramic Package
Surface‑mount ceramic IV package, saves PCB space without degrading high‑frequency RF characteristics.
Key Specifications
| Brand | Eudyna / Sumitomo Electric (SEDI) |
|---|---|
| RoHS Status | RoHS Compliant Options Available |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | IV Surface Mount Ceramic Package |
| Mounting Type | Surface Mount (SMD / SMT) |
| Surface Marking / Silkscreen | EGN21A045IV |
| Technology | GaN‑on‑SiC HEMT |
| Transistor Type | RF Power Transistor / FET |
| Frequency Range | 2100 MHz ~ 2200 MHz (L‑Band) |
| Drain Supply Voltage(Vds) | 50 V |
| Output Power | 45 W |
| Power Gain (Typ) | 16.4 dB |
| Power‑Added Efficiency (Typ) | 35 % |
| Thermal Resistance (Channel‑to‑Case) | 1.8 ~ 2.0 ℃/W |
| Impedance | External Matching Required |
| Operating Temperature Range | -40°C to +85°C (Industrial Grade) |
| Storage Temperature Range | -65°C ~ +175°C |
Typical Applications
- Cellular Base Station Power Amplifiers (LTE, W‑CDMA 2100MHz Infrastructure)
- Point‑to‑Point Digital Microwave Radios & Wireless Backhaul Systems
- Commercial and Military Radar Transceivers
- Broadband Wireless Access (BWA) & Fixed Wireless Terminals
- RF Test & Measurement Signal Amplification Subsystems
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What process is used for EGN21A045IV?
A: It adopts GaN‑on‑SiC HEMT process, featuring high power density, high efficiency and 50V high drain‑voltage capability.
Q2: What frequency band does EGN21A045IV support?
A: Optimized for 2100‑2200 MHz L‑Band, mainly for W‑CDMA and LTE cellular base‑station power amplifiers.
Q3: Can this device use chassis mounting?
A: No. It is IV‑type SMT surface‑mount ceramic package for PCB soldering only, chassis mounting is not supported.
Q4: Is external impedance matching needed?
A: Yes. This bare GaN power transistor requires external input‑output matching networks to achieve rated RF performance.
Q5: Can EGN21A045IV, EGN21A090IV and EGN21A180IV replace each other?
A: Same GaN‑SiC technology and IV SMT package, but output power differs (45W / 90W / 180W). Not pin‑to‑pin compatible. Matching circuits must be fully redesigned for cross‑model substitution.
Q6: What does the IV suffix stand for in EGN21 series?
A: IV refers to Eudyna’s standard surface‑mount ceramic package. All EGN21A‑xxIV share the same package outline, while pin assignments may vary among different power grades.
Q7: Are there alternative parts for EGN21A045IV?
A: You can check other EGN21 series devices. Please confirm frequency, output power, drain voltage, package and matching condition before replacement. Direct drop‑in substitution is not guaranteed.
Q8: How to get datasheet, S‑parameter or bulk quotation?
A: Submit an inquiry to obtain datasheets, S‑parameter files, CAD footprints, real‑time stock and volume pricing.
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