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CGH40045F
CGH40045F
| Part Number | CGH40045F |
|---|---|
| Manufacturer | Wolfspeed / Cree |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | Min 45W (Typ 55W) RF Power GaN HEMT Transistor, DC to 4.0 GHz, 28V, Flanged Ceramic Package (440193 / 440206). |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The CGH40045F is an unmatched Gallium Nitride (GaN) HEMT RF power transistor from Wolfspeed. Operating at nominal 28V supply, it supports DC‑4.0 GHz bandwidth, minimum 45W saturated output power (typical 55W). Based on GaN‑on‑SiC process, it delivers high efficiency and good thermal performance in flanged ceramic housing for radar, wireless and tactical communication systems.
Core Advantages
Ultra‑Wideband Capability (DC to 4.0 GHz)
Broad frequency coverage simplifies multi‑band RF amplifier design and reduces component count.
High‑Efficiency GaN‑on‑SiC Technology
High breakdown voltage, low loss and superior efficiency compared with conventional silicon LDMOS devices.
High Output Power & Linear Gain
Min 45W Psat output power, typical 16 dB gain @2.0 GHz, lowers input drive power requirements.
Rugged Flanged Package with Superior Dissipation
Low thermal resistance flanged ceramic package, stable performance under severe VSWR load‑mismatch conditions.
Key Specifications
| Brand | Wolfspeed (Cree) |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | Flanged Ceramic Package (Type 440193 / 440206) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | CGH40045F |
| Transistor Type | RF GaN HEMT |
| Frequency Range | DC to 4.0 GHz |
| Output Power (Psat) | Min 45 W, Typical 55 W |
| Operating Drain Voltage (Vdd) | 28 V (Nominal) |
| Small Signal Gain | 16 dB (Typical at 2.0 GHz) / 12 dB (at 4.0 GHz) |
| Power Added Efficiency (PAE) | 55% Typical @ Psat |
| Operating Junction Temperature | -40°C to +225°C |
| Case Operating Temperature | -40°C ~ +150°C |
| Drain‑Source Breakdown Voltage Vds | 84 V |
| Input Capacitance Ciss | 19.0 pF |
| Output Capacitance Coss | 5.9 pF |
| Feedback Capacitance Crss | 0.8 pF |
| Thermal Resistance Rth(jc) | 2.8 °C/W |
Typical Applications
- Broadband Commercial and Defense Wireless Communications
- Cellular Base Station Infrastructure (LTE, 5G Sub‑6GHz, WiMAX)
- Tactical Transceivers, Electronic Warfare (EW), and Jamming Equipment
- Commercial and Military Radar Power Amplifiers
- Industrial, Scientific, and Medical (ISM) RF Generators
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What are the key specs of CGH40045F?
A: DC‑4.0 GHz bandwidth, 28V nominal drain voltage. Min 45W saturated output power, typical 55W Psat, typical PAE 55%.
Q2: What process does CGH40045F use?
A: GaN‑on‑SiC HEMT technology, high power density, good thermal performance and high efficiency for RF power amplifiers.
Q3: What is the difference between CGH40045F and CGH40045P?
A: Electrical characteristics are identical. CGH40045F is flanged chassis‑mount package for heatsink mounting; CGH40045P is pill‑style package. PCB mechanical modification is required for cross‑replacement.
Q4: Can CGH40045F replace CGH40035F?
A: Yes, pin‑to‑pin compatible with same package and bias conditions. CGH40045F offers higher output power and can be used as upward replacement. Reverse substitution is not recommended for high‑power applications.
Q5: What is the difference between junction temperature and case temperature?
A: Junction Tj: -40℃ ~ +225℃ (chip internal limit). Case Tc: -40℃ ~ +150℃ (flange surface). For long‑term reliability, keep case temperature well below +150℃.
Q6: What is the output mismatch stress rating?
A: It can withstand 10:1 VSWR full‑phase angle mismatch under rated operating condition, good robustness for RF amplifier systems.
Q7: How can I get datasheet, CAD model or bulk price?
A: Please submit quick inquiry for datasheets, CAD footprints, stock status and volume quotation.
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