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BLC8G21LS-160AV
BLC8G21LS-160AV
| Part Number | BLC8G21LS-160AV |
|---|---|
| Manufacturer | Ampleon |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 160W Asymmetrical Doherty LDMOS RF Power Transistor, 1805MHz to 2170MHz Frequency Range, 28V Operation, SOT1275-1 Flanged Ceramic Air-Cavity Package for Cellular Base Station. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLC8G21LS-160AV is a dual-channel N-channel asymmetrical Doherty LDMOS power transistor from Ampleon, developed for cellular base station amplifier systems. Covering 1805MHz~2170MHz communication band, it integrates built-in input and output matching circuits to deliver high efficiency and linearity under single-carrier W-CDMA operation. Adopting SOT1275-1 flanged ceramic air-cavity package, it features excellent heat dissipation and superior VSWR ruggedness, perfectly suited for macro cell Doherty power amplifier designs.
Core Advantages
High Peak Output Power & Optimized Doherty Performance
Delivers 160W peak RF power, specially tuned for asymmetrical Doherty topologies to boost energy efficiency for telecom infrastructure.
Wide Cellular Frequency Coverage
Covers 1805 MHz to 2170 MHz LTE and W-CDMA bands, compatible with mainstream macro base station transmitter designs.
Integrated Input & Output Matching
Built-in matching network simplifies PCB layout, reduces peripheral components and ensures stable RF performance across operating frequency.
Superior Ruggedness & Thermal Reliability
Withstands VSWR up to 10:1 full-phase mismatch. Flanged ceramic package enables efficient heat transfer for continuous operation in rigorous base station environments.
Key Specifications
| Brand | Ampleon |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT1275-1 (7 Pin) |
| Mounting Type | Chassis / Flange Mount |
| Surface Marking / Silkscreen | BLC8G21LS-160AV Marking |
| Transistor Type | Dual Channel N-Channel LDMOS (Main + Peak) |
| Frequency Range | 1805 MHz ~ 2170 MHz |
| Peak Output Power (P3dB) | 160 W |
| Average Output Power | 22 W Typical (Single Carrier W-CDMA) |
| Operating Drain Voltage (Vds) | 28 V (Typical) |
| Maximum Drain-Source Voltage (Vdss) | 65 V (Absolute Maximum) |
| Gate Voltage Range (Vgs) | -0.5 V ~ +13 V |
| Power Gain | 15.5 ~ 16.0 dB (Typical) |
| Drain Efficiency | 47% ~ 49% Typical |
| ACPR | ≤ -30 dBc |
| Ruggedness | Survives VSWR = 10:1 Full Phase Mismatch |
| Storage Temperature Range | -65°C ~ +150°C |
| Maximum Junction Temperature | 225°C (Absolute Maximum Rating) |
Typical Applications
- Macro & Micro Cellular Communications Base Station Transmitters
- LTE / LTE-Advanced & W-CDMA Wireless Infrastructure Power Amplifiers
- Asymmetrical Doherty Power Amplifier Main/Peak Stage Pair
- Multi-carrier Power Amplifiers (MCPA) & RF Repeaters
- Commercial RF Transmitter Power Stages for 1.8GHz ~ 2.17GHz Bands
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet download, sample requests, stock check, or bulk pricing, please submit your inquiry. We will reply within 24 hours.
Frequently Asked Questions
Q1: What amplifier topology is the BLC8G21LS-160AV optimized for?
A: It is designed for asymmetrical Doherty power amplifiers in cellular macro base stations, suitable for high PAPR communication signals.
Q2: What is the recommended operating supply voltage?
A: Typical drain operating voltage is 28V, absolute maximum Vdss = 65V. Avoid continuous operation near maximum rating.
Q3: Does BLC8G21LS-160AV include internal matching networks?
A: Yes. Pre-matched input and output circuits for 1805MHz~2170MHz, simplifying PCB impedance design.
Q4: What are the package and mounting requirements?
A: SOT1275-1 flanged ceramic air-cavity package. Secure the flange to heatsink with thermal interface material for cooling.
Q5: Can I directly replace other Ampleon LDMOS with this transistor?
A: Direct drop-in replacement is not supported. Differences in matching, gain and power split require circuit retuning when switching BLC8G series models.
Q6: What is the difference between absolute maximum junction temperature and continuous working temperature?
A: 225°C is instantaneous absolute limit. For long service life, keep continuous junction temperature below 200°C with proper cooling.
Q7: How about the mismatch resistance of BLC8G21LS-160AV?
A: It withstands 10:1 full-phase VSWR mismatch under specified test conditions, protecting equipment during antenna open/short faults.
Q8: What alternative devices can be used? What is the difference between BLC8G21LS-160AV and BLC8G21LS-160AVY?
A: Alternatives include other Ampleon BLC8G LDMOS for 1.8~2.1GHz band. Re-optimize RF circuits before substitution due to parameter differences. BLC8G21LS-160AV and BLC8G21LS-160AVY have identical electrical performance; suffix Y represents standard tape & reel packaging, they can be pin-to-pin replaced.
Q9: Is this device applicable for multi-carrier signals?
A: Supports single-carrier and multi-carrier LTE/W-CDMA. Verify linearity under your actual signal bandwidth configuration.
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