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BLF6G10LS-200RN
BLF6G10LS-200RN
| Part Number | BLF6G10LS-200RN |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 200W LDMOS RF Power Transistor, 700MHz to 1000MHz Frequency Range, 28V Drain Operation, Earless Flanged SOT502B Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
BLF6G10LS-200RN is a 200W high-power LDMOS transistor from Ampleon (formerly NXP), designed for base station and industrial RF applications covering 700MHz~1000MHz. Operated at 28V DC, this power FET features built-in input matching and strong load mismatch robustness. Housed in earless ceramic air-cavity SOT502B package, it is widely used for GSM, EDGE, W-CDMA, LTE multi-carrier communication equipment.
Core Advantages
200W Peak Output Power
Delivers up to 200W peak RF power at 28V, ideal for high-capacity telecom power amplifier systems.
700MHz~1000MHz Wide Frequency Band
Supports cellular communication bands and industrial ISM frequency applications.
Integrated Input Matching
On-chip matching circuit reduces peripheral components and simplifies PCB layout design.
Earless SOT502B Package & High Ruggedness
Earless flanged ceramic package, withstands VSWR up to 10:1 across all phases with low thermal resistance.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502B (Earless Flanged Ceramic Air-Cavity Package) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | BLF6G10LS-200RN Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor) |
| Frequency Band | 700 MHz to 1000 MHz |
| Output Power (P1dB) | 200 W (Peak capability at 28V) |
| Average Output Power(W-CDMA,2-carrier) | 40 W @ 869–894 MHz |
| Power Gain (Gp) | 20 dB (Typical) |
| Drain Efficiency (ηD) | 28.5% (Typical under W-CDMA signal) |
| ACPR | -39 dBc (3GPP Test Model) |
| Operating Drain Voltage (VDS) | 28 V (Nominal), Absolute Maximum 65V |
| Quiescent Drain Current (IDQ) | 1400 mA (Typical) |
| Thermal Resistance (Rth(j-case)) | 0.35 K/W |
| Load Mismatch Ruggedness | VSWR = 10:1 through all phases |
| Operating Junction Temperature | Up to +225°C |
| Storage Temperature (Tstg) | -65°C ~ +150°C |
| Packaging Format | Tray / Tube |
Typical Applications
- Cellular base station power amplifiers for GSM, EDGE, W-CDMA, and LTE sub-GHz networks
- High-power macro-cell and micro-cell telecom transmitter output stages
- Industrial, Scientific, and Medical (ISM) RF generators operating in 868MHz and 915MHz bands
- Public safety communication systems, trunked radios, and terrestrial repeaters
- Broadcasting transmitters and laboratory RF power amplification equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the main difference between BLF6G10LS-200RN and BLF6G10LS-13SR?
A: BLF6G10LS-200RN supports peak output power 200W; BLF6G10LS-13SR is 135W. The 200RN variant adopts earless SOT502B ceramic package with lower thermal resistance.
Q2: What frequency band is BLF6G10LS-200RN designed for?
A: Optimized for 700MHz ~ 1000MHz, covers mainstream cellular bands and ISM frequency range.
Q3: Does BLF6G10LS-200RN have built-in impedance matching?
A: Yes, internal input matching is integrated, simplifying PCB circuit design and reducing peripheral components.
Q4: How to install the device to achieve optimal heat dissipation?
A: Mount the SOT502B base flat on heatsink. Use thermal interface material or soldering to minimize thermal resistance.
Q5: What is the operating supply voltage of this transistor?
A: Nominal working voltage 28V, absolute maximum drain voltage 65V.
Q6: What are typical alternative / compatible models?
A: Alternative options: BLF6G10-200RN (with flange version), BLF6G10LS-13SR (lower power). Package and circuit need re-verification when replacing.
Q7: What communication standards can this LDMOS support?
A: Suitable for GSM, EDGE, W-CDMA, LTE multi-carrier base station and industrial RF amplifier equipment.
Q8: How rugged is BLF6G10LS-200RN under load mismatch?
A: It can endure VSWR up to 10:1 across all phases, strong anti-reflection performance for transmitter applications.
Q9: What is the difference between BLF6G10LS-200RN and BLF6G10LS-200RN:11?
A: They are the same device. The suffix :11 is only the distributor inventory coding mark, there is no difference in electrical parameters, package and performance. It can be used interchangeably.
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