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BLF6G20LS-110,118
BLF6G20LS-110,118
| Part Number | BLF6G20LS-110,118 |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 110W Peak LDMOS RF Power Transistor, 1800MHz to 2000MHz, 28V Supply, Flanged Ceramic SOT502B Package, Discontinued. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
BLF6G20LS-110,118 is an N-channel LDMOS RF power transistor from Ampleon (formerly NXP), designed for 1800–2000MHz cellular base station infrastructure. Operating at 28V nominal supply, it delivers up to 110W peak power (25W average W-CDMA) with 19dB typical gain. Equipped with built-in input matching, this device adopts SOT502B ceramic flanged package and withstands 10:1 VSWR mismatch. This model is discontinued and only surplus stock can be supplied.
Core Advantages
110W Peak Output Power
Stable power output under 28V supply, suitable for cellular transmitter driver & final amplifier stages.
Optimized for 1.8GHz~1.9GHz Telecom Band
Tuned for 1800–2000MHz, ideal for GSM1800, PCS1900, W-CDMA and LTE base station equipment.
Built-in Input Matching
Integrated input matching circuit simplifies PCB layout, reduces peripheral component count.
Ceramic Package & High Ruggedness
SOT502B flanged ceramic packaging offers excellent heat dissipation, supports up to 10:1 load mismatch resistance.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502B (Flanged Ceramic Air-Cavity Package) |
| Mounting Type | Chassis Mount / Flange Mount, Source internally connected to flange |
| Surface Marking / Silkscreen | BLF6G20LS-110 Marking |
| Transistor Technology | N-channel LDMOS (Lateral Diffused Metal Oxide Semiconductor) |
| Frequency Band | 1800 MHz to 2000 MHz (Test range:1930 ~ 1990 MHz) |
| Output Power | 110W P1dB Peak; 25W Average (2-carrier W-CDMA) |
| Power Gain (Gp) | 19 dB (Typical at 1930 ~ 1990 MHz) |
| Drain Efficiency (ηD) | 32% Typical (2-carrier W-CDMA test) |
| Operating Drain Voltage (VDS) | 28 V (Nominal); Maximum VDS: 65V |
| Quiescent Drain Current (IDq) | 900 mA Typical |
| Linearity Index | IMD3: -34 dBc, ACPR: -38 dBc (3GPP standard) |
| Load Mismatch Ruggedness | VSWR = 10:1 through all phases |
| Thermal Resistance (Rth(j-case)) | 0.45 K/W Typical |
| Operating Junction Temperature | Up to +225°C |
| Storage Temperature Range | -65°C ~ +150°C |
| ESD Protection | Integrated ESD protection |
| Product Status | Discontinued |
| Packaging Format | Tape & Reel (,118 packing code) |
Typical Applications
- GSM1800, PCS1900, W-CDMA, and LTE cellular base station power amplifiers
- Macro-cell and micro-cell wireless infrastructure final and driver output stages
- Radio repeaters, terrestrial trunked radio systems, and wireless local loop (WLL) equipment
- Commercial RF power generators and laboratory power amplification systems operating in the 1.8GHz to 2.0GHz spectrum
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does the “,118” suffix represent in BLF6G20LS-110,118?
A: The “,118” suffix indicates standard Tape & Reel packaging for this flanged RF transistor.
Q2: What frequency band is BLF6G20LS-110,118 optimized for?
A: Tuned for 1800MHz~2000MHz, applicable to GSM1800, PCS, W-CDMA and LTE cellular base station systems.
Q3: Does BLF6G20LS-110,118 have built-in impedance matching?
A: Yes, integrated input matching simplifies PCB layout and reduces peripheral component count.
Q4: How to install the SOT502B package for good heat dissipation?
A: Mount the flange base firmly onto a flat, clean heatsink with thermal interface material to minimize thermal resistance.
Q5: Is BLF6G20LS-110,118 still in production?
A: This model is discontinued. Only surplus stock is available for supply.
Q6: What are the compatible alternative models for BLF6G20LS-110,118?
A: Recommended alternatives: BLF6G20L-110, BLF6G21LS series. Parameters and PCB layout need re-verification before replacement.
Q7: What is the typical power gain of this transistor?
A: Typical power gain reaches 19dB within 1930~1990MHz test frequency range.
Q8: What is the difference between BLF6G20LS-110,112 and BLF6G20LS-110,118?
A: The die and electrical specifications are identical. ,112 means tube packaging; ,118 stands for tape & reel packaging. They are interchangeable.
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