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BLF6G38LS-50,112
BLF6G38LS-50,112
| Part Number | BLF6G38LS-50,112 |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 50W LDMOS RF Power Transistor, 3400MHz to 3800MHz Frequency Range, 28V Drain Operation, SOT502B Flangeless Ceramic Metal Seal Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLF6G38LS-50,112 is a 50W LDMOS RF power transistor from Ampleon (formerly NXP RF division). Optimized for 3.4GHz–3.8GHz mid-band wireless infrastructure such as WiMAX and 4G LTE broadband devices. Adopting 6th-generation LDMOS technology for stable Class-AB linear performance. Integrated input & output matching circuits simplify PCB layout. The SOT502B flangeless ceramic metal seal package features excellent heat dissipation, and can withstand VSWR up to 10:1 all-phase mismatch under 28V operating voltage.
Core Advantages
50W Saturated Power for 3.4–3.8GHz Band
50W P1dB saturated output power, peak envelope power up to 70W, perfectly matched for 3.5GHz communication infrastructure.
On-Chip Input & Output Matching
Built-in impedance matching network, eliminates complex external matching circuits and reduces PCB layout difficulty.
Good Linearity & Efficiency for Digital Modulation
Optimized for N-CDMA / LTE modulation; typical power gain 14dB, drain efficiency 23%, low adjacent channel leakage.
High Ruggedness & Reliable Ceramic Package
Flangeless ceramic SOT502B air-cavity package, thermal resistance Rth(j-case)=0.7℃/W, withstand VSWR=10:1 full phase mismatch.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502B (Flangeless Ceramic Metal Seal FLATPACK, R-CDFP-F2) |
| Mounting Type | Chassis Mount / Heatsink Mount |
| Surface Marking / Silkscreen | BLF6G38LS-50 Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor) |
| Frequency Band | 3400 MHz to 3800 MHz (3.4GHz – 3.8GHz) |
| Operating Drain Voltage (VDS) | 28 V (Nominal Test Condition) |
| Drain-source Breakdown Voltage V(BR)DSS | 65 V |
| Continuous Drain Current ID | 16.5 A |
| Quiescent Drain Current IDq | 450 mA (Typical) |
| Saturated Output Power (P1dB) | 50 W (Typ @ 28V) |
| Peak Envelope Power | 70 W |
| Linear Average Power(N-CDMA) | 9 W |
| Power Gain (Gp) | 14 dB (Typical @3400MHz, Class-AB) |
| Drain Efficiency | 23% (Typical under N-CDMA test) |
| ACPR | -49 dBc (885kHz offset), -64 dBc (1980kHz offset) |
| Load Mismatch Ruggedness | VSWR = 10:1 through all phases (Vds=28V, f=3600MHz) |
| Thermal Resistance Rth(j-case) | 0.7 ℃/W (PL≤50W) |
| Temperature Parameters | Max Junction Temperature: 225°C, Storage Temperature: -65°C ~ +150°C |
| Internal Matching | Integrated Input & Output Matching |
| ESD Protection | Built-in internal ESD protection structure |
| Case Connection | Source (Source terminal grounded) |
| Packaging Format | Tube Pack (112 packing code suffix) |
Typical Applications
- WiMAX base station and subscriber unit power amplifiers operating at 3.5GHz
- 3.4GHz ~ 3.8GHz LTE cellular infrastructure transmitters, repeaters and micro base stations
- Point-to-multipoint broadband wireless access (BWA) systems
- Driver & output amplifier stages for wireless communication RF power modules
- Industrial broadband RF power amplification within 3.4–3.8GHz spectrum
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the difference between BLF6G38LS-50,112 and BLF6G38LS-50,118?
A: Die and all electrical specifications are identical. Suffix ,112 stands for Tube packaging; ,118 represents Tape & Reel packaging. Two versions can be mutually replaced.
Q2: What frequency band is BLF6G38LS-50,112 suitable for?
A: Optimized for frequency range 3400MHz ~ 3800MHz, widely used for 3.5GHz WiMAX, LTE broadband wireless communication equipment.
Q3: Does this RF transistor have built-in impedance matching?
A: Yes, both input and output matching circuits are integrated inside the chip, which greatly simplifies 50-ohm circuit design.
Q4: What alternative / compatible models can replace BLF6G38LS-50,112?
A: Recommended alternative: BLF6G38-50 (same power level & frequency band, verify matching circuit before replacement). For higher power upgrade, refer to BLF6G38LS-100 (100W version). Pinout and package need reconfirmation before replacement.
Q5: What is the maximum load mismatch this transistor can withstand?
A: It can survive VSWR=10:1 all-phase load mismatch under nominal 28V supply voltage, which improves field equipment stability.
Q6: What is the difference between BLF6G38LS-50 and BLF6G38LS-100?
A: BLF6G38LS-50:50W saturated power; BLF6G38LS-100:100W saturated power. Same SOT502B package and frequency band, different output power level for different amplifier power grade design.
Q7: How to install the SOT502B package to guarantee thermal performance?
A: Mount the flat base closely on precision processed heatsink, apply high-performance thermal interface material to reduce thermal resistance, ensure reliable contact for heat dissipation.
Q8: Can I operate this device outside the 3400~3800MHz frequency range?
A: Internal matching network is tuned for 3.4–3.8GHz. Operating outside this band will lead to reduced gain, lower efficiency and unstable performance, not recommended.
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