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BLF7G10LS-250
BLF7G10LS-250
| Part Number | BLF7G10LS-250 |
|---|---|
| Manufacturer | Ampleon (formerly NXP Semiconductors) |
| Category | Discrete Semiconductor Products > RF Transistors (LDMOS) |
| Description | 250W LDMOS Power Transistor for Base Station Applications in the 869 MHz to 960 MHz Frequency Range, Earless Flanged Ceramic Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLF7G10LS-250 is a high-power LDMOS RF transistor from Ampleon (formerly NXP), designed for cellular base station transmitters covering 869 MHz to 960 MHz. Built on 7th-generation LDMOS technology, it delivers high output power, efficiency and outstanding ruggedness for GSM, EDGE, W-CDMA and LTE infrastructure. Equipped with built-in input matching to simplify circuit design, this device adopts earless flanged ceramic packaging, featuring low thermal resistance and strong tolerance against high VSWR mismatch.
Core Advantages
High Efficiency & Power Density
Supplies up to 250W CW output power with favorable gain and drain efficiency, lowering power consumption for base station power amplifiers.
Built-In Input Matching
Integrated input matching circuit reduces peripheral components, simplifies PCB layout and ensures stable broadband performance.
Excellent Ruggedness & Thermal Property
Withstands severe load mismatch. The ceramic flange package achieves low thermal resistance for stable long-term operation.
Mature LDMOS Process
Ampleon Gen7 LDMOS technology offers good linearity, low memory effect and integrated ESD protection, suitable for multi-carrier digital modulation systems.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free |
| EDA/CAD Model | Schematic symbol models, 3D CAD step profiles, and PCB footprint land patterns are available on request |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502B (Earless Flanged Ceramic Package) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | BLF7G10LS-250 Marking |
| Transistor Type | N-channel RF LDMOSFET (Class AB) |
| Frequency Range | 869 MHz to 960 MHz |
| Output Power | 250 W (CW) |
| Power Gain | 19.5 dB (Typical) |
| Nominal Drain-Source Voltage | 30 V |
| Maximum Drain-Source Voltage | 65 V |
| Quiescent Drain Current (IDQ) | 1800 mA (Typical) |
| Gate Threshold Voltage | 1.5 V ~ 2.5 V (Typical) |
| Thermal Resistance (Rth(j-c)) | 0.38 K/W |
| Input Return Loss | ≤15.5 dB |
| ACPR | ≤ -34 dBc |
| Operating Junction Temperature | -65°C to +200°C |
| ESD Protection | Integrated ESD Protection |
| Packaging Format | Tray / Bulk |
Typical Applications
- Cellular base station power amplifiers (GSM, EDGE, W-CDMA, LTE)
- Sub-1 GHz wireless infrastructure and commercial repeaters
- Industrial, Scientific, and Medical (ISM) RF amplifiers in the 915 MHz band
- PMR (Private Mobile Radio) and TETRA high-power transmitters
- Broadband RF power amplifiers for communication systems
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the primary operating frequency range for the BLF7G10LS-250?
A: The BLF7G10LS-250 is optimized for base station applications operating in the 869 MHz to 960 MHz frequency spectrum.
Q2: What supply voltage is recommended for operating the BLF7G10LS-250?
A: The device is rated for a nominal drain-source operating voltage of 30V, with maximum drain-source voltage up to 65V.
Q3: Does the BLF7G10LS-250 feature internal impedance matching?
A: Yes, it includes internal input matching circuitry to simplify PCB layout and deliver stable broadband performance.
Q4: How does the package handle thermal dissipation?
A: It adopts SOT502B earless ceramic flange package with low thermal resistance, supporting efficient heat transfer when installed on a heatsink.
Q5: What CW output power can this LDMOS transistor provide?
A: It supports up to 250W continuous wave output power under standard test conditions.
Q6: Are there alternative or compatible replacement models?
A: Common comparable parts include BLF7G10LS-200 (200W lower power version). They share the same frequency band and package but differ in maximum output power, cannot directly interchange without circuit tuning.
Q7: What modulation standards is this transistor suitable for?
A: Designed for Class AB operation, compatible with GSM, EDGE, W-CDMA and LTE multi-carrier communication systems.
Q8: What is the main difference between BLF7G10LS-250 and BLF6G10LS series?
A: BLF7G series belongs to the 7th-generation LDMOS with better efficiency and ruggedness; BLF6G is the previous generation. They are not pin-to-pin compatible generally.
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