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BLF7G24LS-140,118

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BLF7G24LS-140,118

Part NumberBLF7G24LS-140,118
ManufacturerAmpleon / NXP Semiconductors
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs
Description140W LDMOS RF Power Transistor, 2300MHz to 2400MHz Frequency Range, 28V Drain Operation, Flangeless Ceramic SOT502B Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The BLF7G24LS-140,118 is a 140W high-power LDMOS RF transistor manufactured by Ampleon (formerly NXP). Designed for 2300MHz–2400MHz wireless base stations, it operates at 28V drain voltage based on 7th-gen LDMOS technology. It delivers high gain, excellent efficiency and linearity for multi-carrier signals. Housed in SOT502B flangeless ceramic air-cavity package, it withstands VSWR 10:1 load mismatch, ideal for macro cells, micro base stations and Doherty amplifiers.

Core Advantages

140W Peak Output Power at 2.3GHz – 2.4GHz Band

Provides continuous and peak power output up to 140W @28V, supporting reliable signal amplification for 2.3GHz LTE network equipment.

7th Generation LDMOS Technology

Optimized for high PAE, low memory effect and stable linearity for high PAPR digital modulation standards including LTE and W-CDMA.

Internal Input Impedance Matching

Built-in input matching simplifies 50-ohm circuit design and reduces peripheral components. External output matching circuit is required.

Flangeless Ceramic Air-Cavity Package & Ruggedness

SOT502B packaging ensures low thermal resistance and can sustain severe mismatch conditions up to VSWR 10:1 without device damage.

Key Specifications

BrandAmpleon / NXP Semiconductors
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
ManufacturerAmpleon (Former NXP RF Power Division)
Device TypeN-channel LDMOS RF Power FET
Package / CaseSOT502B (Flangeless Ceramic Air-Cavity Package)
Mounting TypeChassis Mount
Surface Marking / SilkscreenBLF7G24LS-140 Marking
Transistor TechnologyLDMOS (Lateral Diffused Metal Oxide Semiconductor Gen7)
Frequency Band2300 MHz to 2400 MHz (2.3GHz – 2.4GHz)
Operating Drain Voltage (VDS)28 V (Nominal)
Drain-Source Voltage (Absolute Max)65 V
Breakdown Voltage V(BR)DSS65 V (Minimum)
Quiescent Drain Current (IDQ)1300 mA (Typical Bias Condition)
Threshold Voltage VGS(th)1.5 V ~ 2.3 V (ID = 1 mA)
Output Power (PL)30W Average (IS-95); 140W Continuous Peak
Power Gain (Gp)18.5 dB (Typical)
Drain Efficiency26.5% (IS-95 Mode); Higher under CW operation
ACPR (Adjacent Channel Power Ratio)≤ -45 dBc (885 kHz Offset, IS-95 Standard)
Thermal Resistance (Rth(j-c))0.28 K/W (Typical, TC=80°C, PL=125W)
Load Mismatch RuggednessVSWR = 10:1 through all phases
Operating Junction TemperaturePeak +200°C, continuous operation ≤ +150°C
Storage Temperature Range-65°C ~ +150°C
RoHS ComplianceYes, Lead-free
Internal MatchingInternal Input Matching Only`
ESD ProtectionIntegrated
Packaging FormatTape & Reel (,118 packing code)

Typical Applications

  • 2.3GHz LTE and 4G/5G mid-band cellular base station power amplifiers
  • High-efficiency Doherty power amplifiers for wireless communications infrastructure
  • WiMAX base stations and broadband wireless access (BWA) transmission systems
  • Macro-cell and micro-cell wireless infrastructure final stage transmitters
  • Commercial and industrial RF power amplification systems operating in the 2300MHz to 2400MHz frequency range

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What does the “,118” suffix represent in BLF7G24LS-140,118?

A: The “,118” suffix is the commercial packaging code designating standard Tape & Reel delivery format for ceramic components.

Q2: What is the primary difference between BLF7G24LS-140 and BLF7G24LS-100?

A: The BLF7G24LS-140 delivers higher peak output power (140W vs 100W) at 28V. Normally used as peak amplifier, while BLF7G24LS-100 works as main amplifier in symmetrical Doherty circuit.

Q3: Does the BLF7G24LS-140,118 feature integrated impedance matching?

A: Only internal input matching is integrated. External output matching network must be designed separately.

Q4: How should the ceramic SOT502B package be installed for optimal heat dissipation?

A: Mount the base flat and secure directly onto precision-machined heatsink with mounting screws and thermal interface material (TIM) to minimise thermal resistance.

Q5: Are there alternative replacement models for BLF7G24LS-140,118?

A: BLF7G24LS-140,112 is electrically identical, only packaging format differs (Tube/Tray). Verify mechanical package outline before replacement.

Q6: What operating frequency band is BLF7G24LS-140,118 optimized for?

A: It is designed for 2300MHz ~ 2400MHz, targeted at 2.3GHz LTE wireless communication base station infrastructure.

Q7: What maximum load mismatch can this LDMOS transistor withstand?

A: The device can sustain severe load mismatch conditions up to VSWR 10:1 without permanent device degradation.

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