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BLF7G27L-135,112
BLF7G27L-135,112
| Part Number | BLF7G27L-135,112 |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 135W LDMOS Power Transistor for Base Station Applications from 2300 MHz to 2700 MHz, SOT502A Package. |
| Stock Status | In Stock (EOL Obsolete, original surplus stock) |
| Origin | Original Factory |
Product Overview
The BLF7G27L‑135,112 is a 135 W LDMOS RF power transistor from Ampleon (formerly NXP), optimized for 2300‑2700 MHz cellular base‑station applications. Featuring 7th‑generation LDMOS technology, it provides good linearity, high PAE and 10:1 VSWR ruggedness. Integrated input‑output matching and ESD protection simplify 50‑Ohm RF circuit design. Housed in SOT502A ceramic flange package for chassis mounting. This is an end‑of‑life component, sold as original surplus stock.
Core Advantages
High Efficiency & Power Density
Delivers 135 W output power with high PAE, lowering thermal dissipation and operating cost for base‑station power amplifiers.
7th‑Gen LDMOS Process
Superior linearity, stable gain and low thermal resistance across full 2.3‑2.7 GHz operating band.
Integrated Matching & ESD Protection
Built‑in I/O matching networks and ESD protection simplify 50‑Ohm system integration and improve device durability.
High Ruggedness
Withstands up to 10:1 VSWR across all phase angles without performance degradation or device damage.
Key Specifications
Warranty1‑Year Standard Quality Warranty
| Brand | Ampleon / NXP |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Package / Case | SOT502A (Flanged Ceramic Package,3‑pin) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | BLF7G27L‑135 Marking |
| Transistor Type | LDMOS (Lateral Diffused Metal Oxide Semiconductor) RF Power FET |
| Frequency Range | 2300 MHz to 2700 MHz (2.3 GHz‑2.7 GHz) |
| Output Power (P1dB / Peak) | 135 W (CW / Peak Power) |
| Power Gain | Typ. 16.5 dB @ 2.6 GHz |
| Drain‑Source Voltage (Vdss) | 65 V DC Max |
| Operating Drain Voltage (Vds) | 28 V DC Typ. |
| Quiescent Drain Current(Idq) | 1.3 A Typical @ Vds=28V |
| Ruggedness (VSWR) | 10:1 Load VSWR Capable |
| Operating Junction Temperature | Up to +200°C |
| Pin Assignment | 1‑Drain, 2‑Gate, 3‑Source / Flange |
| Packaging Suffix | ,112 = Tray packaging |
| Lifecycle Status | EOL / Obsolete |
Typical Applications
- 4G LTE, LTE‑Advanced, and WiMAX cellular base station power amplifiers (PA)
- Macrocell, microcell, and remote radio head (RRH) transmitter units
- W‑CDMA / UMTS multi‑carrier wireless communication infrastructure
- Point‑to‑point microwave wireless backhaul and broadband wireless access systems
- RF industrial, scientific, and medical (ISM) high‑power signal amplifiers
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the primary operating frequency range for the BLF7G27L‑135,112?
A: Optimized for 2300‑2700 MHz (2.3‑2.7 GHz) RF power amplification.
Q2: What is the typical operating voltage for this RF LDMOS transistor?
A: Typical Vds 28V DC, maximum rated 65V DC.
Q3: What package style is used for BLF7G27L‑135,112?
A: SOT502A ceramic flange 3‑pin, 1‑Drain, 2‑Gate, 3‑Source‑Flange, requires chassis cooling.
Q4: Why marking shows Ampleon or NXP on component surface?
A: NXP spun‑off RF division to Ampleon. Same part and performance; marking change is corporate adjustment, not counterfeit.
Q5: What does suffix ,112 stand for in BLF7G27L‑135,112?
A: Suffix ,112 denotes tray packaging.
Q6: Why some sources list 25W output power for this part?
A: 25W is small‑signal test value. Rated power is 135W. Refer to official datasheet for real‑circuit use.
Q7: What is the recommended alternative replacement part?
A: Alternative: BLF7G27L‑140,112. Re‑validate matching and bias before application.
Q8: Can BLF7G27L‑135,112 be pin‑to‑pin compatible with other SOT502A LDMOS?
A: Same mechanical footprint, different electrical specs. Cannot swap directly; RF matching needs retuning.
Q9: Compare BLF7G27L‑135 versus BLF7G27L‑140?
A: Same package & frequency band, 135W vs 140W. Pin‑compatible, matching adjustment required for cross‑substitution.
Q10: How can I request full datasheets, S‑parameter simulation models, or volume pricing for BLF7G27L‑135,112?
A: Please submit our quick inquiry form for datasheets, simulation files and bulk quotation.
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