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BLF7G27LS-140,112
BLF7G27LS-140,112
| Part Number | BLF7G27LS-140,112 |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 140W Gen7 LDMOS RF Power Transistor, 2500MHz to 2700MHz Frequency Range, 28V Drain Operation, Earless Ceramic SOT502B Package, Internal Input & Output Matching. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLF7G27LS-140,112 is a 140W Gen7 LDMOS RF power transistor from Ampleon (ex NXP Semiconductors). Targeted for 2500MHz–2700MHz wireless communication infrastructure. This RF power FET achieves typical 16.5dB gain with great efficiency and linearity for LTE, W-CDMA and multi-carrier systems. Optimized for 28V supply, it integrates input & output impedance matching. The earless SOT502B ceramic package supports VSWR 20:1 full-phase mismatch, widely adopted in macro and micro base station Doherty power amplifiers.
Core Advantages
140W Power Rating for 2.5GHz – 2.7GHz Band
Delivers 140W output power at 28V supply, stable amplification for 2.6GHz LTE, 4G and mid-band wireless devices.
7th Generation LDMOS Process
Advanced Gen7 LDMOS improves power efficiency, lowers memory effects and ensures steady linearity for high-PAPR signals.
Built-in RF Impedance Matching
Integrated matching network fits standard 50-ohm RF systems, reduces external components and shortens development cycles.
High-Ruggedness SOT502B Earless Ceramic Package
SOT502B air-cavity package offers reliable thermal performance and withstands VSWR 20:1 full-phase load mismatch.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502B (Flangeless Ceramic Package) |
| Mounting Type | Flangeless Chassis Mount |
| Surface Marking / Silkscreen | BLF7G27LS-140 Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor Gen7) |
| Frequency Band | 2500 MHz to 2700 MHz (2.5GHz – 2.7GHz) |
| Typical Output Power | 140 W (Typical at Vds=28V) |
| Power Gain | 16.5 dB (Typical at 2600MHz) |
| Drain Efficiency | High Efficiency (>45% typical under Class-AB / Doherty) |
| Nominal Operating Drain Voltage | 28 V |
| Drain-Source Breakdown Voltage V(BR)DSS | ≥ 65 V |
| Gate Threshold Voltage VGS(th) | 1.5 V ~ 2.3 V (Test Condition: Id=1mA) |
| Max Continuous Drain Current | 28 A |
| Thermal Resistance Rth(j-c) | 0.28 K/W typical |
| Load Mismatch Ruggedness | VSWR = 20:1 through all phases |
| Operating Junction Temperature | Maximum Junction Temperature | Up to +200°C |
| Storage Temperature Range | -65°C ~ +200°C |
| Packaging Format | Tray / Tube (Suffix ,112) |
Typical Applications
- 2.5GHz – 2.7GHz LTE and 4G communication base station power amplifiers
- High-efficiency Doherty power amplifiers for wireless infrastructure
- Broadband wireless access transmission equipment
- Macro-cell and micro-cell base station final transmit stages
- Industrial RF power amplification within 2500MHz~2700MHz frequency range
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does suffix ,112 stand for on BLF7G27LS-140,112?
A: ,112 means Tray / Tube packaging. The ,118 suffix refers to tape & reel packing.
Q2: What is the difference between BLF7G27LS-140 and BLF7G27LS-75P?
A: Both share SOT502B package and 2500~2700MHz frequency band. BLF7G27LS-140 outputs 140W, while BLF7G27LS-75P reaches 75W. Circuit matching adjustment is required for mutual replacement.
Q3: Can BLF7G27LS-140 directly replace BLF7G24LS-140?
A: Not plug-and-play. BLF7G24LS-140 is optimized for 2300~2400MHz. Internal matching differs, RF circuit redesign is necessary.
Q4: Are there cross-brand alternatives for BLF7G27LS-140?
A: Alternatives need to meet 2.5–2.7GHz, 140W, 28V specs. Different brands adopt different internal matching, full performance testing is required after replacement.
Q5: Can this LDMOS transistor operate outside 2500MHz~2700MHz?
A: Not recommended. Built-in matching is customized for this band. Gain, efficiency and linearity will degrade sharply out of frequency range.
Q6: What heat dissipation suggestions for the SOT502B earless package?
A: Mount firmly on heatsink with thermal paste. Keep long-term operating junction temperature below 160°C to extend service life.
Q7: What is the maximum load mismatch this device can withstand?
A: It can survive full-phase VSWR 20:1 load mismatch under specified test conditions.
Q8: Is BLF7G27LS-140 suitable for Class AB and Doherty amplifier design?
A: Yes, it is optimized for Class AB and Doherty architectures widely used in cellular base stations.
Q9: Can I order samples of BLF7G27LS-140,112?
A: Samples are available. Please submit an inquiry with your required quantity for quotation and lead time.
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