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BLF8G20LS-220
BLF8G20LS-220
| Part Number | BLF8G20LS-220 |
|---|---|
| Manufacturer | Ampleon / NXP Semiconductors |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | Power LDMOS Transistor, 220W Peak (Modulated); 55W Average, 1800 MHz to 2000 MHz, 28V, SOT502B Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The BLF8G20LS‑220 is a high‑power Gen8 LDMOS RF transistor from Ampleon (formerly NXP). Operating from 1800 MHz to 2000 MHz, it delivers 220 W peak output power under modulated signals at 28 V supply, with 55 W average power for LTE/W‑CDMA base‑station amplifiers. It comes in a low‑thermal‑resistance earless ceramic SOT502B package, offering high gain, good efficiency and strong load‑mismatch ruggedness for wireless infrastructure.
Core Advantages
High Efficiency & Superior Power Gain
Built on Ampleon Gen8 LDMOS technology, it delivers high PAE and power gain to lower power consumption and thermal load.
Integrated Internal Matching
Built‑in input/output matching networks simplify PCB layout and reduce external discrete components.
High Ruggedness & Reliability
Withstands 10:1 VSWR load mismatch across all phases, ensuring stable long‑term operation in base‑station systems.
Optimized Thermal Management
Earless ceramic SOT502B package features low thermal resistance for direct heatsink mounting and effective heat dissipation.
Key Specifications
| Brand | Ampleon / NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT502B (Earless Ceramic Flange) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | BLF8G20LS-220 Marking |
| Transistor Type | LDMOS N-Channel RF Power Transistor |
| Operating Frequency Range | 1800 MHz to 2000 MHz |
| Output Power (Pout) | 220 W Peak (Modulated); 55 W Average (W‑CDMA) |
| Drain-Source Voltage (Vds) | 28 V DC Typ. (Max 65V Vdss) |
| Power Gain (Gps) | > 18 dB Typ. @ 1805 MHz |
| Drain Efficiency | 34% Typ. (W‑CDMA modulated); >50% (CW condition) |
| Quiescent Drain Current (IDQ) | 1600 mA (Typ. @ Vds=28V) |
| Junction Temperature (TJ) | 225 °C (Max) |
| Storage Temperature | -65 °C ~ +150 °C |
| Thermal Resistance Rth(j‑c) | 0.27 K/W |
| Reference Case Temperature | 80 °C |
| VSWR Ruggedness | 10:1 across all phase angles (Class‑AB operation) |
| Pin Assignment | 1‑Drain, 2‑Gate, 3‑Source (Source connected to flange) |
Typical Applications
- LTE, W-CDMA, and GSM/EDGE Wireless Base Station Power Amplifiers (1.8 GHz – 2.0 GHz Band)
- Macrocell Base Station Multi-Carrier Power Amplifiers (MCPA)
- Cellular Repeater Systems and Small Cell Transmission Nodes
- Industrial, Scientific, and Medical (ISM) RF Power Amplifiers
- Wireless Infrastructure Transmitters and Repeater Systems
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What operating frequency range is supported by the BLF8G20LS‑220?
A: Optimized for base‑station applications, it operates within 1800 MHz‑2000 MHz.
Q2: What package type does the BLF8G20LS‑220 use?
A: Earless ceramic SOT502B package for high‑power RF performance.
Q3: Does the BLF8G20LS‑220 feature internal matching?
A: Yes. Integrated input & output matching networks simplify circuit design and impedance matching.
Q4: What are pin‑compatible replacement models for BLF8G20LS‑220?
A: BLF8G20LS‑250 is pin‑compatible with same SOT502B footprint, higher 250 W CW output power. It can be a drop‑in upgrade, but bias and matching networks need adjustment for best performance.
BLF8G10LS‑270 is NOT a direct substitute. It is tuned for 820‑960 MHz, frequency mismatch will cause severe gain and efficiency loss.
Q5: What is typical IDQ quiescent drain current for BLF8G20LS‑220?
A: Typical IDQ = 1600 mA at Vds=28 V for Class‑AB bias. Wrong bias settings will reduce efficiency or damage the transistor.
Q6: What is the VSWR ruggedness specification of BLF8G20LS‑220?
A: Under Class‑AB operation, it withstands 10:1 VSWR across all phase angles, critical for base‑station amplifier reliability.
Q7: What is the difference between BLF8G20LS‑220 and BLF8G20LS‑250?
A: Both share SOT502B package, pinout, frequency band and Gen8 LDMOS technology.
‑ BLF8G20LS‑220: 220 W CW output power.
‑ BLF8G20LS‑250: 250 W CW output power, requires enhanced heatsink capacity.
Q8: What is the difference between BLF8G20LS‑220, BLF8G20LS‑220J and BLF8G20LS‑220U?
A: These three share identical die, electrical specs, SOT502B package and pin‑out, fully drop‑in compatible.
‑ BLF8G20LS‑220: Original base part number from datasheet.
‑ BLF8G20LS‑220J: Old NXP OPN, tape‑and‑reel packaging, obsolete / discontinued.
‑ BLF8G20LS‑220U: Current Ampleon OPN, tube/tray packaging, mainstream supply version.
Only packaging differs; no change to RF performance.
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