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BLM10D3438-35AB

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BLM10D3438-35AB

Part NumberBLM10D3438-35AB
ManufacturerAmpleon
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs / Power Transistors / MMICs
Description35W 3-Stage Integrated Asymmetric Doherty LDMOS RF Power MMIC / Module, 3400MHz to 3800MHz 5G Sub-6GHz Band, 28V Base Station Amplifier, Plastic SMT Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

BLM10D3438-35AB is a 3-stage integrated asymmetric Doherty LDMOS MMIC from Ampleon, designed for 5G Sub-6GHz small cell base stations. Operating 3400–3800MHz (5G NR n77/n78), this Gen10 LDMOS device integrates Doherty carrier/peaking circuits inside one SMT package. It delivers up to 35W peak power, high gain and excellent linearity. The exposed-tab 20-PQFN package simplifies PCB layout and reduces external components for Massive MIMO and RRU hardware.

Core Advantages

Advanced 10th Generation LDMOS Technology

Ampleon Gen10 LDMOS process provides high power density and stable performance for 3.4–3.8GHz 5G communications.

Fully Integrated 3-Stage Doherty Architecture

Built-in splitter, combiner and matching circuits, achieves ≥33dB gain without extra external RF components.

High Back-Off Drain Efficiency

Optimized asymmetric Doherty topology for high PAPR communication signals, maintains high efficiency at 8dB power back-off.

Compact SMT Package & High Reliability

Over-molded 20-PQFN (SOT1462-1) package with integrated heat spreader, supports VSWR 10:1 load mismatch resistance.

Key Specifications

BrandAmpleon
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / Case20-PQFN / SOT1462-1 (8.0 × 8.0 × 2.1 mm)
Mounting TypeSurface Mount Device (SMD/SMT)
Surface Marking / SilkscreenBLM10D3438-35AB Marking
Transistor Technology10th Generation N-Channel LDMOS, 3-Stage Integrated Asymmetric Doherty MMIC
Operating Frequency Range3400 MHz to 3800 MHz (5G NR Band n77 / n78 / C-Band)
Peak Output Power (P3dB)Typ. 35 W (approx. 45.4 dBm)
Average Output Power (Pout(AV))Typ. 5.0 W – 5.5 W (at 8 dB PAPR)
Operating Drain Voltage (VDS)28 V DC (Nominal), Support 26V low voltage operation
Maximum Rated Vds65 V
Power Gain (Gp)Typ. 33.0 dB or higher (Range:31 ~ 35.4 dB)
Doherty Drain Efficiency (ηd)Typ. 41% ~ 47% at average output power
ACPR≤ -30 dBc @20MHz LTE signal
Gain Flatness≤0.9 dB across full frequency band
Input / Output ImpedanceSource impedance 50 Ω, Pre-matched output impedance 30 Ω
Maximum Junction Temperature (Tj)200 °C (Absolute Maximum Transient)
Storage Temperature Range-65 °C ~ +150 °C
Thermal Resistance (Rth(j-c))3.2 ~ 4.0 K/W
Packaging FormatTape & Reel / Anti-Static Tray Packaging

Typical Applications

  • 5G Sub-6GHz Massive MIMO active antenna systems (AAS) and remote radio units (RRU)
  • Microcell, Small Cell, and Pico Cell 5G base station power amplifiers (3.4 GHz – 3.8 GHz)
  • Driver and final power amplifier stages in 3GPP Band n77 / n78 cellular equipment
  • Commercial wireless repeaters, bi-directional signal boosters, and enterprise small cells
  • High-efficiency broadband industrial RF power transmitters and microwave communications

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What frequency band fits BLM10D3438-35AB?

A: 3400MHz–3800MHz, suitable for 5G NR n77, n78 and C-band base stations.

Q2: Difference between BLM10D3438-35AB and BLM10D3438-35ABZ?

A: Same die, electrical specs and package. The suffix Z means tape & reel packing. They are pin-to-pin interchangeable.

Q3: Can it run on 26V supply?

A: Nominal voltage is 28V. It supports 26V operation, with slightly lower output power, gain and efficiency. Refer to datasheet curves.

Q4: Advantages of integrated 3-stage Doherty design?

A: Built-in splitter, combiner & matching circuits. It delivers ≥33dB gain, saves PCB space and reduces peripheral components.

Q5: Any alternative Ampleon Doherty MMIC for 3.4–3.8GHz?

A: BLM10D3740-35AB is an alternative with wider frequency range. Matching adjustment may be needed before replacement.

Q6: Can cross-brand RF LDMOS directly replace this device?

A: Not recommended. Different internal circuits and bias settings. Full RF testing is required after replacement.

Q7: What voltage and output power does this module provide?

A: Nominal 28V supply voltage, peak output power up to 35W.

Q8: Are external power splitters or combiners needed?

A: No. Splitter and combiner are fully integrated inside the package to simplify design.

Q9: How to get datasheet and bulk quotation?

A: Submit inquiry via our form. Our sales team will send datasheet, stock info and price within 24 hours.

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