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CGH40035F
CGH40035F
| Part Number | CGH40035F |
|---|---|
| Manufacturer | Wolfspeed / Cree |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | GaN HEMT RF Power Transistor, 45W Psat, 35W Typical Operating Output, DC‑4.0 GHz, 28V, Flanged Ceramic Package(440193 / 440206). |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The CGH40035F is an unmatched GaN‑on‑SiC HEMT RF power transistor from Wolfspeed. Operating at 28V nominal supply, it supports DC‑4.0 GHz bandwidth, delivering 45W saturated power and 35W typical operating output power. Its flanged ceramic package provides excellent heat dissipation, suitable for RF amplifiers, cellular infrastructure and radar applications.
Core Advantages
Wide DC‑4.0 GHz Bandwidth
Broad instantaneous frequency coverage for multi‑band RF power amplifier designs.
High‑Efficiency GaN‑on‑SiC Process
Superior PAE and breakdown performance versus traditional silicon LDMOS devices.
High Small‑Signal Gain
15 dB gain @2.0 GHz, reduces driver‑stage requirements for easier system design.
Robust Flanged Ceramic Package
Low thermal resistance, stable operation under high VSWR load‑mismatch conditions.
Key Specifications
| Brand | Wolfspeed (Cree) |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | Flanged Ceramic Package (440193 / 440206) |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | CGH40035F |
| Transistor Type | RF GaN HEMT |
| Frequency Range | DC to 4.0 GHz |
| Saturated Output Power (Psat) | 45 W (Typical) |
| Typical Operating Output Power | 35 W |
| Operating Drain Voltage (Vdd) | 28 V (Nominal) |
| Small Signal Gain | 15 dB (Typical at 2.0 GHz) / 12 dB (at 4.0 GHz) |
| Power Added Efficiency (PAE) | Up to 60% (Typical @Psat) |
| Operating Junction Temperature | -40°C to +225°C |
| Case Operating Temperature | -40°C ~ +100°C |
| Drain‑Source Breakdown Voltage Vds | 84 V |
| Input Capacitance Ciss | 14.7 pF |
| Output Capacitance Coss | 4.9 pF |
| Feedback Capacitance Crss | 0.6 pF |
Typical Applications
- Broadband Commercial and Military Radio Communications
- Cellular Base Station Infrastructure (LTE, 5G Sub‑6GHz, WiMAX)
- Tactical Transceivers, Electronic Warfare (EW), and Jamming Systems
- Commercial and Defense Radar Systems
- Industrial, Scientific, and Medical (ISM) RF Amplifiers
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the output power and frequency range of CGH40035F?
A: DC‑4.0 GHz operating bandwidth, 45W typical saturated Psat power, 35W typical practical output power, nominal drain voltage 28V DC.
Q2: What semiconductor technology does CGH40035F adopt?
A: GaN‑on‑SiC process, delivering high power density, excellent PAE and low thermal resistance.
Q3: What are the differences among CGH40035F, CGH40035F‑TB and CGH40035F‑AMP?
A: Chip electrical performance is identical. CGH40035F: mass‑production bare transistor; CGH40035F‑TB: transistor on test fixture for lab evaluation; CGH40035F‑AMP: complete pre‑matched evaluation amplifier board. They cannot be directly pin‑to‑pin replaced.
Q4: Difference between CGH40035F and CGH40035P?
A: Same electrical parameters. CGH40035F is flange chassis‑mount package; CGH40035P is pill‑style package. Different mechanical outline, PCB modification is required for replacement.
Q5: Are there compatible alternative models for CGH40035F?
A: Wolfspeed CGH40045P is a higher‑power reference option. There is no true pin‑to‑pin drop‑in substitute. Any replacement needs re‑tuning RF matching circuits.
Q6: What is the distinction between junction temperature and case temperature?
A: Junction temperature Tj:‑40℃ ~ +225℃ (internal chip limit). Case temperature Tc:‑40℃ ~ +100℃ (flange surface). Keep case temperature below +100℃ for long‑term reliability.
Q7: How to get datasheet, CAD model or bulk price?
A: Submit Quick Inquiry form for datasheets, CAD footprints, stock status and volume quotation.
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