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FLM0910-15F
FLM0910-15F
| Part Number | FLM0910-15F |
|---|---|
| Manufacturer | Eudyna Devices / Fujitsu / Sumitomo Electric (SEDI) |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | Internally Matched X‑Band Power GaAs FET, 15W P1dB Output Power, 9.5 GHz‑10.5 GHz, IK Hermetic Flanged Ceramic Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The FLM0910‑15F is internally‑matched X‑band GaAs power FET from Eudyna (Sumitomo SEDI). Operating 9.5‑10.5 GHz, it delivers 15W (42 dBm) P1dB output power at 10 V drain supply. Built‑in 50‑ohm input/output matching simplifies amplifier design, widely used for radar, SATCOM and microwave radio systems.
Core Advantages
Integrated 50‑Ohm Matching Networks
Internal input‑output 50‑ohm matching, no complex external tuning, shorten product development cycle.
15W High X‑Band Output Power
15W P1dB output power, typical gain 6.5‑7.5 dB, suitable for final‑stage power amplifiers within 9.5‑10.5 GHz.
GaAs RF Power Semiconductor
GaAs Schottky process, low distortion and reliable performance for X‑band microwave RF power applications.
Hermetic IK Flanged Package
Hermetic metal‑ceramic flange chassis‑mount package, low thermal resistance, high environmental reliability.
Key Specifications
| Brand | Eudyna / Fujitsu / Sumitomo Electric (SEDI) |
|---|---|
| RoHS Status | RoHS Compliant Options Available |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | IK Package / Hermetic Metal‑Ceramic Flange Package |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | 0910‑15F |
| Transistor Type | RF Power GaAs FET |
| Frequency Range | 9.5 GHz to 10.5 GHz (X‑Band) |
| Output Power (P1dB) | 15 W (42 dBm Typical) |
| Power Gain (G1dB) | 6.5 dB to 7.5 dB (Typical) |
| Operating Drain Voltage (VDS) | 10 V (Nominal), Absolute Maximum 15 V |
| Impedance | 50 Ω Internally Matched (In/Out) |
| PAE (Power‑Added Efficiency) | 40% Typical @ rated P1dB |
| Thermal Resistance (Channel‑to‑Case) | 2.3 ~ 2.6 ℃/W Typical |
| Operating Channel Temperature | Up to +175°C |
| Storage Temperature Range | -65℃ ~ +175℃ |
Typical Applications
- X‑Band Satellite Communication (SATCOM) Ground Stations and High‑Power VSAT Transceivers
- Point‑to‑Point Broadband Microwave Digital Radio Links
- Commercial, Aerospace, and Military X‑Band Radar Transceivers
- Electronic Warfare (EW) & Electronic Countermeasures (ECM) Amplifiers
- High‑Power Microwave Test & Measurement Equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What are the key specifications of FLM0910‑15F?
A: X‑Band 9.5‑10.5 GHz GaAs FET, 10 V nominal Vds(max 15 V), 15 W (42 dBm) P1dB output, typical gain 6.5‑7.5 dB, built‑in 50‑ohm matching, IK hermetic flange package.
Q2: Is an external matching circuit required?
A: No. 50‑ohm input and output matching is integrated inside the IK hermetic package, no external tuning needed.
Q3: What does suffix “F” stand for?
A: “F” means IK hermetic metal‑ceramic flange chassis‑mount package for excellent thermal dissipation. All FLM0910‑xxF share identical footprint.
Q4: What is the difference between FLM0910‑3F /4F /8F /12F /15F /25F?
A: All are pin‑to‑pin compatible, same IK package and 10 V bias. Only P1dB output power varies. Higher‑power models can replace lower‑power ones for extra power headroom. Reverse replacement is not recommended.
Q5: Can FLM0910‑15F substitute FLM0910‑12F?
A: Yes, fully pin‑to‑pin compatible with same package and bias condition. FLM0910‑15F provides higher power margin. Do not use lower‑power parts for high‑power designs.
Q6: What thermal considerations should I follow?
A: Typical thermal resistance 2.3‑2.6℃/W. Keep case temperature below +150℃ for long‑term reliability; absolute maximum channel temperature +175℃.
Q7: How to obtain datasheet, S‑parameter or bulk pricing?
A: Submit product inquiry for datasheet, S‑parameter files, CAD footprint, stock status and volume quotation.
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