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FLM1011-12F
FLM1011-12F
| Part Number | FLM1011-12F |
|---|---|
| Manufacturer | Eudyna Devices / Fujitsu / Sumitomo Electric (SEDI) |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | Internally Matched X‑Ku Band Power GaAs FET, 12W Output Power, 10.7 GHz‑11.7 GHz, IB Hermetic Metal‑Ceramic Flange Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The FLM1011‑12F is internally‑matched high‑power GaAs FET for X‑Ku band RF power amplification. Operating 10.7‑11.7 GHz, it delivers typical 12W (40.5dBm) P1dB output power with integrated 50‑ohm input/output matching. Hermetically sealed IB flange package supports chassis mounting for SATCOM, radar and microwave radio systems.
Core Advantages
Integrated 50‑Ohm Matching Networks
Built‑in input and output impedance matching for 50‑ohm system, reduces external tuning components and shortens amplifier design cycle.
12W High Power for X‑Ku Band
Typical 40.5dBm P1dB output power across 10.7‑11.7GHz, typical gain 5.0‑6.0dB, suitable for transmitter power‑stage applications.
High‑Reliability GaAs MESFET Technology
Gold metallization GaAs process, high PAE 25% typical, good thermal stability for continuous‑wave operation.
Hermetic IB Flange Package
IB hermetic metal‑ceramic flange package, chassis flange mount, low thermal resistance, resistant to harsh environmental conditions.
Key Specifications
| Brand | Eudyna / Fujitsu / Sumitomo Electric (SEDI) |
|---|---|
| RoHS Status | RoHS Compliant Options Available |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | Hermetic Metal‑Ceramic Flange Package |
| Mounting Type | Chassis Mount / Flange Mount |
| Surface Marking / Silkscreen | 1011‑12F |
| Transistor Type | RF Power GaAs FET |
| Frequency Range | 10.7 GHz to 11.7 GHz (X‑Ku Band) |
| Output Power (P1dB) | 12 W (40.5 dBm Typical) |
| Power Gain (G1dB) | 5.0 dB to 6.0 dB (Typical) |
| Operating Drain Voltage (VDS) | 10 V (Nominal), Absolute Max 15V |
| Impedance | 50 Ω Internally Matched (In/Out) |
| Typical PAE | 25 % Typical |
| Total Power Dissipation | 57.6 W (Absolute Maximum) |
| Thermal Resistance (Rth) | 2.3 ℃/W Typical |
| 3rd‑Order Intermodulation (IM3) | ‑45 dBc Typical |
| Operating Channel Temperature | Up to +175°C |
| Storage Temperature Range | ‑65°C ~ +175°C |
Typical Applications
- X‑Ku Band Satellite Communication (SATCOM) Ground Stations and High‑Power VSAT Systems
- Point‑to‑Point Broadband Microwave Digital Radio Links
- Commercial, Defense, and Aerospace X‑Band Radar Transceivers
- Electronic Warfare (EW) and Electronic Countermeasures (ECM) Power Amplifiers
- High‑Power Microwave Test Equipment and Transmitter Driver Stages
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What output power and frequency range for FLM1011‑12F?
A: It operates 10.7‑11.7 GHz (X‑Ku Band), typical P1dB output power is 12W (40.5dBm).
Q2: Do I need external impedance matching circuit?
A: No. 50‑ohm input & output matching is integrated inside the IB hermetic package, ready for direct 50‑Ω system use.
Q3: Can FLM1011‑8F replace FLM1011‑12F?
A: Pin‑to‑pin package compatible(IB package). FLM1011‑8F outputs 8W, lower than 12W model. Only suitable for de‑rated low‑power designs, cannot achieve 12W power.
Q4: What does the suffix “F” and number mean in FLM1011‑xxF?
A: “F” stands for hermetic flange IB metal‑ceramic package. The two‑digit number is rated output power: 08 = 8W, 12 =12W. FLM1011‑8F / 12F share identical footprint, only power differs.
Q5: What is maximum drain‑source voltage VDS rating?
A: Nominal VDS=10V, absolute maximum 15V. Never exceed 15V to avoid device damage.
Q6: Any other direct cross‑reference replacements?
A: FLM0910 series works for 9.5‑10.5GHz, different frequency band, not drop‑in replacement. FLM1011‑8F is the only pin‑compatible downgrade option for 10.7‑11.7GHz application.
Q7: Any important operating precautions for this GaAs FET?
A: GaAs power device is sensitive to ESD. Follow proper ESD protection. Apply gate bias first before drain voltage VDS power‑on to prevent transistor burnout.
Q8: How to get datasheet, S‑parameter or bulk price?
A: Submit inquiry form for datasheets, S‑parameter files, stock check and volume quotation.
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