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HTN7G21S040PG
HTN7G21S040PG
| Part Number | HTN7G21S040P(G) |
|---|---|
| Manufacturer | WATECH |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | 40W LDMOS RF Power Transistor, 700 MHz to 2100 MHz, Surface Mount Flange Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HTN7G21S040P(G) is WATECH’s 40 W unmatched LDMOS RF power transistor. Operating across 700‑2100 MHz, it supports CDMA, GSM, W‑CDMA, LTE and WiMAX cellular infrastructure. Featuring low thermal‑resistance package and built‑in enhanced ESD, it delivers consistent saturated output power for base‑station, repeater and DAS amplifier systems.
Core Advantages
Wide‑Band Frequency Coverage
700‑2100 MHz wide frequency range, supports multiple cellular standards and simplifies multi‑band amplifier BOM cost.
Excellent RF Ruggedness
Strong high‑VSWR tolerance, enhanced robustness, avoids device degradation under real‑world field operating conditions.
Superior Thermal Performance
TO‑270‑A gull‑wing flange SMD package with low thermal resistance, ensures stable continuous‑run thermal performance.
Built‑In Enhanced ESD
Internal enhanced ESD design improves device safety during PCB assembly and production handling.
Key Specifications
| Brand | WATECH |
|---|---|
| RoHS Status | Lead‑Free / RoHS Compliant |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | TO‑270‑A (Gull Wing) Flanged Surface Mount Package |
| Mounting Type | Surface Mount (SMD / SMT) |
| Surface Marking / Silkscreen | HTN7G21S040PG |
| Transistor Technology | LDMOS (RF Power, Un‑matched) |
| Operating Frequency Range | 700 MHz to 2100 MHz |
| Saturated Output Power (P3dB) | 40 W (Typical) |
| Power Gain | 16 ~ 21.4 dB (Typical) |
| Drain‑Source Voltage (VDD) | +28 V (Nominal) |
| Power Added Efficiency (PAE) | > 50% (P3dB Mode) |
| Average Power Dissipation | 3.98 W |
| Test Condition | 25℃, VDD=+28V, Pulse 100us, DC=10% |
| Exposed Backside | Source terminal for transistor |
| Operating Ambient Temperature | -40℃ ~ +85℃ |
| Storage Temperature | -55℃ ~ +200℃ |
Typical Applications
- CDMA / GSM / EDGE / MC‑GSM Radio Power Amplifiers
- W‑CDMA, TDD / FDD‑LTE and WiMAX Infrastructure
- Cellular Repeater & Bi‑directional Amplifier (BDA)
- Distributed Antenna Systems (DAS)
- Wireless Remote Radio Units (RRU) and RF Driver Stages
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Packing Form | Tape & Reel for HTN7G21S040P(G) |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: Who manufactures HTN7G21S040P(G)?
A: HTN7G21S040P(G) is produced by WATECH Electronics.
Q2: What are its frequency and output power specs?
A: Wide operating band 700‑2100 MHz, typical saturated output power 40W at 28V drain voltage.
Q3: What is the difference between HTN7G21S040P and HTN7G21S040P(G)?
A: Electrical performance is identical. HTN7G21S040P: TO‑270 straight‑lead, tray packing. HTN7G21S040P(G): TO‑270‑A gull‑wing leads, tape‑and‑reel for SMT mass assembly.
Q4: Does this LDMOS come with internal matching?
A: No, it is an unmatched transistor. External input and output matching networks on PCB are required for amplifier implementation.
Q5: Are evaluation boards available for this part?
A: Yes. EVB1 for 920‑960 MHz; EVB2 for 1800‑1880 MHz. Contact us to check availability.
Q6: What alternative parts can replace HTN7G21S040P(G)?
A: Note: Not pin‑to‑pin drop‑in replacement without validation. Comparable candidates are 28V 40W unmatched wide‑band LDMOS for 700‑2100 MHz infrastructure. Please verify package, bias and matching circuit before substitution.
Q7: What is the recommended drain supply voltage?
A: Nominal drain voltage is +28V. Continuous 32V input is forbidden, over‑voltage may permanently damage the device.
Q8: How to get datasheet, samples or volume quotation?
A: Submit request via our Quick Inquiry form for official datasheet, CAD files, sample and bulk‑order pricing.
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