Share to:
HTN8G27S010P
HTN8G27S010P
| Part Number | HTN8G27S010P |
|---|---|
| Manufacturer | WATECH Electronics (Suzhou Huatai) |
| Category | RF LDMOS Power Transistor |
| Short Description | 10W Gen8 LDMOS RF Power Transistor, 700MHz~2700MHz, 28V, PLD Surface Mount Package |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HTN8G27S010P is a Gen8 LDMOS RF power transistor from WATECH. Operating at 700MHz~2700MHz with 28V supply, it delivers 10W saturated output power. Designed as driver amplifier for 4G LTE infrastructure, it adopts PLD surface-mount package with exposed thermal pad, ideal for GSM, WCDMA, TD-LTE, FDD-LTE small cells, base stations and MIMO pre-amplifier circuits.
Core Advantages
Wide Frequency Coverage 700MHz ~ 2700MHz
Supports multiple cellular standards, covering multi-band LTE base station driver demands.
10W Rated Output Power @ 28V
19~24dB typical gain, suitable for driver and pre-driver positions in RF amplifier chains.
Compact PLD SMD Package
Surface-mount housing with exposed thermal pad, low thermal resistance and compatible with mass SMT production.
Excellent Ruggedness & Thermal Stability
Operating temperature range: -65°C ~ +150°C, capable of enduring antenna VSWR mismatch for outdoor radio equipment.
Key Specifications
| Brand | WATECH |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA Resources | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | PLD Surface Mount Package with Exposed Thermal Pad (Non TO-270A) |
| Mounting Type | SMD / Surface Mount Device |
| Surface Marking / Silkscreen | HTN010W Marking |
| Technology | Gen8 LDMOS (Lateral Diffused Metal Oxide Semiconductor) |
| Frequency Band | 700 MHz ~ 2700 MHz |
| Typical Saturated Output Power | 10 W (40~41dBm) @ 28V |
| Typical Power Gain | 19 ~ 24 dB |
| Typical PAE | 10% ~ 20% (Varies with CW / Pulse signal) |
| Nominal Drain Voltage (Vds) | 28 V DC |
| Operating Junction Temperature | -65°C ~ +150°C |
| Tape & Reel Packaging | Available |
Typical Applications
- 4G LTE / GSM / WCDMA / TD-LTE / FDD-LTE base station driver amplifier
- Small cell radio unit, micro base station RF front-end
- MIMO communication equipment pre-amplifier stage
- Broadband wireless access RF power amplifier modules
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What frequency range does HTN8G27S010P support?
A: It covers 700MHz to 2700MHz broadband frequency, supporting multiple cellular communication standards.
Q2: Where is this transistor used in circuits?
A: With 10W output power, it is commonly used as driver or pre-driver stage for high-power final-stage LDMOS transistors.
Q3: Are there compatible alternative models?
A: Same-series options: HTN8G27S015P (15W), HTN8G27S020P (20W). Similar imported competitor part: AFT27S010NT1.
Q4: Can HTN8G27S010P directly replace AFT27S010NT1?
A: Similar power rating but different frequency coverage and PCB footprint. The matching circuit needs full re-tuning; not plug-and-play.
Q5: What is the difference between HTN8G27S010P and HTN7G38S007P?
A: HTN8G27S010P: 700–2700MHz / 10W; HTN7G38S007P:700–3800MHz /7W. Select according to your operating band and power demand.
Q6: Does HTN8G27S010P have built-in input & output matching?
A: No integrated matching. You need to design external discrete matching circuits for your operating frequency.
Q7: Can this device run continuously under CW operation?
A: Yes. Proper thermal design is required to keep junction temperature below +150°C.
Q8: What VSWR can this LDMOS withstand?
A: It tolerates load mismatch up to 10:1. An extra protection circuit is recommended for outdoor harsh working conditions.
Related Products
