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HTN8G27S020PG

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HTN8G27S020PG

Part NumberHTN8G27S020PG
ManufacturerWATECH
CategoryDiscrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs
Description20W LDMOS RF Power Transistor, 700MHz to 2700MHz Frequency Range, TO-270-A Flanged Gull-Wing Lead Surface Mount Package.
Stock StatusIn Stock
OriginOriginal Factory

Product Overview

The HTN8G27S020PG is a 20W Gen8 LDMOS RF power transistor manufactured by Watech Electronics. Operating at 28V drain voltage for 700MHz–2700MHz frequency range, it delivers high gain, excellent linearity and superior PAE. Designed for LTE, 4G/5G sub-6GHz base stations, WiMAX and WLL equipment. It adopts TO-270-A flanged gull-wing SMD package with exposed thermal pad for low thermal resistance and great load mismatch robustness.

Core Advantages

700MHz – 2700MHz Broad Frequency Coverage

Supports mainstream cellular standards, provides stable 20W saturated RF output for mobile communication equipment.

8th-Generation LDMOS Process

Minimizes memory effect and keeps great linearity, suitable for high PAPR digital modulation signals.

TO-270-A Flanged Gull-Wing Package

Large exposed thermal pad improves heat dissipation; convenient for SMD assembly and automated optical inspection.

Strong Load Mismatch Resistance

Stable performance under high VSWR conditions, enhances reliability of outdoor communication power amplifiers.

High Power Added Efficiency

Reduces power consumption and heat output, lowering overall operation cost of amplifier modules.

Key Specifications

BrandWATECH
RoHS StatusRoHS Compliant / Lead-Free / Green
EDA/CADSymbol, Footprint & 3D Model Available
Warranty1-Year Standard Quality Warranty
Package / CaseTO-270-A (Flanged), Surface Mount Gull-Wing Package with Exposed Thermal Pad
Mounting TypeSurface Mount Device (SMD/SMT)
Surface Marking / SilkscreenHTN020W Marking
Transistor TechnologyLDMOS (Lateral Diffused Metal Oxide Semiconductor Gen8)
Frequency Band700 MHz to 2700 MHz
Saturated Output Power (Psat)20 W (43.01 dBm)
Power Gain16.1 ~ 24.75 dB
Power Added Efficiency (PAE)16.1% ~ 61.77%
Quiescent Current (Icq)180 mA
Operating Drain Voltage (Vds)28 V (Nominal)
Operation ModeCW / Pulsed (Pulse width 1ms, Duty cycle 10%)
Supported Communication StandardsGSM, WCDMA, CDMA, TDD/FDD-LTE, WiMAX
Thermal ResistanceLow Thermal Resistance via Exposed Bottom Pad
Operating Temperature-10°C ~ +85°C
Storage Temperature-55°C ~ +150°C
Maximum Junction Temperature150°C
Packaging FormatTape & Reel

Typical Applications

  • 700MHz – 2700MHz LTE and 4G/5G base station driver stages and small cell output stages
  • Macro-cell, micro-cell, and small cell wireless infrastructure power amplifiers
  • Driver stages in Doherty power amplifier configurations
  • WiMAX base stations and Broadband Wireless Access (BWA) systems
  • Wireless Local Loop (WLL) communication equipment
  • Industrial RF transmission equipment covering sub-3GHz frequency range

Order & Shipping Info

Minimum Order Quantity (MOQ)1 Piece
Shipping TimeShipped within 1-2 business days
Delivery Time3-7 working days worldwide
Shipping MethodsDHL, UPS, FedEx, EMS
Payment MethodsT/T (Bank Transfer), PayPal, Credit Card, Western Union

Technical Support

For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

Frequently Asked Questions

Q1: What does the “PG” suffix mean in HTN8G27S020PG?

A: PG represents TO-270-A flanged gull-wing surface-mount package variant for this Gen8 LDMOS transistor.

Q2: How does HTN8G27S020PG compare with WATECH HTN8G27S015P?

A: HTN8G27S020PG delivers 20W output power for 700–2700MHz; HTN8G27S015P is a 15W version. Direct pin-to-pin replacement requires circuit matching verification.

Q3: Are cross-brand alternative transistors available for HTN8G27S020PG?

A: Multiple 28V wideband LDMOS from other manufacturers can serve as alternatives. Confirm frequency, package, pinout and impedance matching before replacement. Contact us for alternative recommendations.

Q4: What frequency band is HTN8G27S020PG designed for?

A: Optimized for 700MHz to 2700MHz, covering low-band and mid-band cellular communication standards.

Q5: How to handle thermal dissipation for TO-270-A package?

A: Fully solder the exposed thermal pad to PCB ground copper. Add sufficient thermal vias to reduce junction temperature and improve long-term reliability.

Q6: Does this transistor support CW and pulsed operation?

A: Yes, it supports continuous wave and pulsed operation for various base station power amplifiers.

Q7: What is the difference between operating temperature and storage temperature?

A: Operating: -10°C ~ +85°C (powered working state). Storage: -55°C ~ +150°C (power-off storage).

Q8: Can HTN8G27S020PG be used in 2.4GHz WiFi amplifier projects?

A: Its upper frequency limit reaches 2700MHz for technical feasibility. However, this component is optimized for cellular infrastructure instead of consumer WiFi devices.

Q9: What is the recommended nominal drain supply voltage?

A: Nominal Vds is 28V DC. Do not exceed maximum rated voltage to prevent permanent device damage.

Q10: Are higher-power WATECH LDMOS options available beyond 20W?

A: WATECH supplies higher-power Gen8 LDMOS series. Send your frequency and power requirements for suitable model suggestions.

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