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HTN8G36S015P
HTN8G36S015P
| Part Number | HTN8G36S015P |
|---|---|
| Manufacturer | Watech |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | Unmatched discrete LDMOS Power Amplifier, 15W saturated output power, frequency range 3300‑3600 MHz, DFN 5x5mm plastic surface‑mount package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HTN8G36S015P is an unmatched discrete LDMOS RF power transistor from Watech. It provides 15W saturated output power across 3300‑3600 MHz with a fixed +28V drain supply. Housed in DFN 5×5 mm lead‑free plastic package featuring low thermal resistance. It targets mMIMO driver and small cell base station final‑stage applications. External input‑output matching network is required for normal amplifier operation.
Core Advantages
High Saturated Output Power
15W saturation power at +28V supply, optimized for 3300‑3600 MHz wireless infrastructure.
Excellent Thermal Performance
Low‑thermal‑resistance DFN5×5 package, enables continuous high‑power operation with adequate heatsinking.
High Mismatch Robustness
Resists load mismatch stress and lowers device degradation risk under real‑world operating conditions.
Compact SMT Package
DFN 5×5 mm surface‑mount form factor, fully compatible with standard SMT assembly processes.
Key Specifications
| Brand | Watech |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA/CAD Resource | Symbol, Footprint & 3D Model Available |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | DFN 5×5 mm Package (P Suffix) |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | HTN8G36S015P Marking |
| Transistor Technology | Unmatched LDMOS RF Power Transistor |
| Operating Frequency Range | 3300 MHz ~ 3600 MHz |
| Saturation Output Power | 15 W |
| Average Power | 1.0 W |
| Drain Operating Voltage | +28 V DC (Fixed Nominal) |
| Power Gain | 17.5 dB @ 3450 MHz, LTE signal |
| Drain Efficiency | 13.1% @ 3450 MHz, LTE signal |
| Exposed Pad Note | Exposed backside pad is source terminal |
| Storage Temperature | -65°C ~ +150°C |
| Max Junction Temperature | -40°C ~ +225°C |
| Ordering Variant | HTN8G36S015P (Reel); HTN8G36S015PEVB (Evaluation Board) |
| Packaging Format | Tape & Reel |
Typical Applications
- mMIMO driver amplifier stage
- Small cell base station final power stage
- 3.3‑3.6GHz wireless communication system
- Custom RF power amplifier development
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check or bulk pricing, please use Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does “unmatched” mean for HTN8G36S015P?
A: No internal input or output matching network inside the transistor. External matching circuit must be designed to achieve rated gain and output power.
Q2: What is the difference between HTN8G36S015P and HTN8G36S015PEVB?
A: HTN8G36S015P is bare transistor supplied in tape‑and‑reel. HTN8G36S015PEVB is assembled evaluation board for quick performance testing.
Q3: Can I operate this transistor above +28V drain voltage?
A: No. Nominal drain voltage is fixed +28V DC. Exceeding rating will cause permanent device damage.
Q4: Can other‑brand LDMOS be pin‑to‑pin direct replacement?
A: Not recommended for drop‑in replacement. Even with same DFN5×5 package, pin assignment, bias and impedance differ. Re‑tuning matching network is required for cross‑brand substitution.
Q5: Which frequency band does HTN8G36S015P support?
A: Operating range is 3300‑3600 MHz, for sub‑6G small‑cell and mMIMO driver designs. It does not cover full n78 band.
Q6: Is the exposed back pad ground? How should I solder it?
A: Exposed rear pad is source terminal instead of ground. Full solder contact is critical for thermal dissipation and RF performance.
Q7: Can HTN8G36S015P be used for power amplifier final stage?
A: Yes, it can work as small‑cell base station final stage. External matching network and proper heatsink are mandatory.
Q8: Can I purchase the EVB board separately?
A: Yes, order part number HTN8G36S015PEVB. Please send inquiry for EVB stock and lead‑time confirmation.
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