Share to:
HTN9G22P370S
HTN9G22P370S
| Part Number | HTN9G22P370S |
|---|---|
| Manufacturer | Watech |
| Category | Discrete Semiconductor Products > Transistors > RF Power Transistors > LDMOS Transistors |
| Description | 370W LDMOS Asymmetrical Doherty RF Power Transistor, 1805‑2170 MHz, +28V, Earless Flanged Air Cavity Spliced Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
HTN9G22P370S is an asymmetrical Doherty LDMOS RF power transistor for wireless base‑station infrastructure. It delivers 370W peak saturated power and 54W average WCDMA power across 1805‑2170 MHz at +28V supply. Packaged in ACS2110S‑4L earless flanged air‑cavity housing with low thermal resistance, it is suitable for 4G‑LTE, 5G macro/micro base stations, repeaters and DAS systems, and tolerates 10:1 VSWR without device damage.
Core Advantages
High RF Power Capacity
370W peak saturated power, 54W average WCDMA power, optimized for Doherty amplifier designs.
Good Efficiency & Linearity
47%‑55% typical drain efficiency, stable ACPR performance under 4G/5G modulated signals.
Low‑Thermal‑Resistance Package
ACS2110S‑4L earless flanged air‑cavity package; rear side acts as source terminal for excellent heat dissipation.
Strong Load‑Mismatch Robustness
Withstands full‑phase 10:1 VSWR, improving field‑level equipment reliability.
Key Specifications
| Brand | Watech |
|---|---|
| RoHS Status | RoHS Compliant / Lead‑Free |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | ACS2110S‑4L,Earless Flanged Air Cavity Spliced Package, 4‑Leads |
| Mounting Type | Surface Mount / SMT Assembly |
| Surface Marking / Silkscreen | HTN9G22P370S Marking |
| Transistor Technology | RF Power Transistor (LDMOS, Asymmetrical Doherty Final Stage) |
| Operating Frequency Range | 1805 MHz to 2170 MHz |
| Peak Saturated Output Power | 370 W |
| Average Output Power(WCDMA) | 54 W |
| Drain Operating Voltage Vds | +28 V DC Nominal |
| Max Drain Voltage V(br)dss | Min 65 V (Typical 68 V) |
| Gate Voltage Range Vgs | ‑5 V ~ +10 V |
| Power Gain | Typ.14.5‑15.5 dB @2.1GHz |
| Drain Efficiency | Typ.47%‑55% under WCDMA signal |
| Thermal Resistance Rth(jc) | 0.35 °C/W |
| Maximum Junction Temperature Tj | ‑40°C ~ +225°C |
| Storage Temperature Tstg | ‑55°C ~ +150°C |
| Packaging Format | Reel Package |
Typical Applications
- 3GPP 5G & 4G‑LTE cellular base‑station transmit chain
- Macro & Micro base station Doherty power amplifier modules
- Repeater, DAS distributed antenna system hardware
- Mobile wireless communication infrastructure equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What frequency range does HTN9G22P370S support?
A: 1805‑2170 MHz, optimized for DCS / PCS 4G‑LTE and sub‑6G 5G base‑station bands.
Q2: What is the power rating of HTN9G22P370S?
A: 370W saturated peak power, 54W average WCDMA power. It is built for asymmetrical Doherty amplifier circuits.
Q3: What does suffix “S” mean in part number?
A: “S” refers to ACS2110S‑4L earless flanged air‑cavity package. It has flange base but without mounting ears, not flangeless GaN package.
Q4: Can this transistor run on 48V power supply?
A: No. HTN9G22P370S is 28V nominal LDMOS device. 48V input will cause permanent damage.
Q5: What are SEVB1 and SEVB2?
A: Matching evaluation boards. SEVB1 for 1805‑1880 MHz; SEVB2 for 2110‑2170 MHz, used for device performance test.
Q6: Can I replace with other brand 370W LDMOS directly?
A: Not pin‑to‑pin compatible. Different brands vary in pin‑out, impedance, flange dimension and Doherty asymmetry ratio. Circuit re‑matching is required.
Q7: What is the difference between storage temp and junction temp?
A: Storage temperature ‑55℃ ~ +150℃ (power‑off). Max junction temperature ‑40℃ ~ +225℃ (power‑on working). Do not exceed junction temperature under full power.
Q8: Is HTN9G22P370S compatible with standard symmetrical Doherty circuits?
A: It is asymmetrical‑type LDMOS. It works best with asymmetrical Doherty topology; performance will degrade in symmetrical amplifier designs.
Q9: How to get datasheet, S‑parameter or bulk quotation?
A: Submit inquiry form, our RF technical team will send documents and pricing within 24 working hours.
Related Products
