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HTU7G06S005P
HTU7G06S005P
| Part Number | HTU7G06S005P |
|---|---|
| Manufacturer | WATECH |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs |
| Description | 5W LDMOS RF Power Transistor, 100MHz to 600MHz VHF/UHF Band, PDFN 5×5mm Surface Mount Package with ESD Protection. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The HTU7G06S005P is an N-channel Gen7 LDMOS RF power transistor developed by WATECH, designed for VHF/UHF frequency band from 100MHz to 600MHz. It provides typical 5W output power at 3.6V supply voltage, with high efficiency and built-in ESD protection. This device adopts PDFN 5×5mm SMD package, supports high SWR mismatch resistance, widely used in handheld radio, mobile communication and industrial RF amplifier systems.
Core Advantages
100~600MHz VHF/UHF Working Band
Optimized for two-way radio VHF/UHF application scenarios, stable RF performance within full frequency range.
Multi-Voltage Operation & High Efficiency
Supports 3.6V /7.2V /7.5V working voltage, power added efficiency reaches 60%~70%, low power consumption for portable equipment.
PDFN 5×5mm Compact SMD Package
Small form factor with exposed thermal pad, convenient automatic SMT assembly and excellent heat dissipation capability.
Strong Mismatch & ESD Protection
Withstand SWR up to 20:1 without damage, integrated ESD protection circuit, improves equipment stability under complex working environment.
Key Specifications
| Brand | WATECH |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | PDFN (5×5mm) |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Surface Marking / Silkscreen | HTU7G06S005P Marking |
| Transistor Technology | LDMOS (Lateral Diffused Metal Oxide Semiconductor Gen7), N-Channel, Built-in ESD Protection |
| Frequency Band | 100 MHz to 600 MHz (VHF/UHF Band) |
| Output Power (P1dB / Peak) | 5 W (Typical @3.6V); 8W @7.2V; 10W @7.5V, f=435MHz |
| Power Added Efficiency | 60% ~ 70% (Depends on voltage & operating frequency) |
| Operating Drain Voltage (VDS) | 3.6V /7.2V /7.5V (Multi reference design) |
| Maximum Drain Voltage (VDSS) | 26 V |
| Threshold Voltage (Vth) | 1.6 ~ 2.0 V (Typical:1.8V) |
| Quiescent Drain Current (Idq) | Typical 500mA |
| Drain Leakage Current (IDSS) | ≤10µA (VDD=28V, VGG=0V) |
| Gate Leakage Current (IGGS) | ≤1µA (VGG=5V, VDD=0V) |
| Thermal Resistance (RθJC) | ≤2.8°C/W |
| Operating Ambient Temperature | -40℃ ~ +125℃ |
| Maximum Junction Temperature | 150℃ |
| Storage Temperature | -55℃ ~ +150℃ |
| Max Tolerable VSWR | 20:1 full phase mismatch without damage |
| Packaging Format | Tape & Reel |
Typical Applications
- Power amplifier & driver stage for handheld two-way radio (Walkie Talkie)
- VHF/UHF portable communication equipment
- Short range RF industrial transceiver module
- Broadband RF power driver amplifier systems
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Lead Time | Ship within 1-2 business days |
| Global Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Terms | T/T, PayPal, Credit Card, Western Union |
Technical Support
Contact us for datasheet, sample request, BOM quotation and circuit matching suggestion. We will reply within 24 hours.
Frequently Asked Questions
Q1: What frequency range does HTU7G06S005P support?
A1: Operating band 100MHz ~ 600MHz, optimized for VHF/UHF walkie-talkie systems. It cannot support up to 1000MHz.
Q2: What output power can this LDMOS achieve?
A2: 5W typical @3.6V, 8W @7.2V, max 10W @7.5V (Test condition: 435MHz).
Q3: Can HTU7G06S005P withstand antenna mismatch?
A3: Yes, it supports up to 20:1 full-phase VSWR mismatch without damage. Proper PCB heat dissipation is still required.
Q4: What package is HTU7G06S005P?
A4: PDFN 5×5mm SMD package. Ignore outdated SOT-89 marking found on some old documents for PCB design.
Q5: Are there pin-compatible alternatives?
A5: Other 5W VHF/UHF LDMOS with PDFN5×5 package can be used as alternatives. Send your circuit parameters for matching verification before replacement.
Q6: Difference between HTU7G06S005P and HTM7G series?
A6: HTU7G06S005P is designed for low-voltage portable radios. HTM7G series are higher-power stationary amplifier chips, not directly interchangeable.
Q7: Can I replace other brands’ RF transistors directly?
A7: Blind replacement is not recommended. Gate bias and RF impedance differ between brands, circuit tuning is necessary after swapping.
Q8: Does HTU7G06S005P come with ESD protection?
A8: Built-in ESD protection. Standard anti-static operation is still required during SMT assembly.
Q9: What devices commonly use this transistor?
A9: Mainly used for power amplifier stage of 1st/2nd generation handheld walkie talkies and portable VHF/UHF RF modules.
Q10: Is HTU7G06S05P the same component?
A10: They are variant writings of the same model. Confirm suffix “005P” and PDFN 5×5mm package when placing orders to avoid errors.
Q11: Are there special PCB layout suggestions?
A11: Maximize copper area under the exposed pad for heat dissipation. Keep RF signal traces short to guarantee stability at full power output.
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