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HTU7G06S0P5P
HTU7G06S0P5P
| Part Number | HTU7G06S0P5P |
|---|---|
| Manufacturer | WATECH |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs / Power Transistors |
| Description | 0.5W VHF/UHF N-channel LDMOS Power Transistor, suitable for walkie-talkie pre-driver amplifier stage, high power added efficiency, SOT-89-3L surface mount package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
HTU7G06S0P5P from WATECH is an N-channel LDMOS RF transistor for 1.8MHz–600MHz VHF/UHF band. It delivers typical 0.5W saturated output power (peak up to 1.5W) at 4V supply voltage with 50mA quiescent current and 70%~73% PAE. Housed in SOT-89-3L SMD package, it fits automatic SMT assembly and serves as pre-driver for portable radios, broadcast transmitters and industrial wireless RF frontends.
Core Advantages
High Power Added Efficiency
70%~73% typical PAE, lowering power consumption and heat for battery-operated portable equipment.
Wide VHF/UHF Bandwidth
1.8MHz–600MHz coverage, matching walkie-talkie and broadcast frequency bands.
Reliable Pre-Driver Performance
Optimized for RF pre-driver stage, offering stable output to drive post-stage power amplifiers.
Compact SMD Package
SOT-89-3L small form factor; sufficient PCB copper layout ensures stable heat dissipation.
Key Specifications
| Brand | WATECH |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD Resource | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | SOT-89-3L Surface Mount Package |
| Mounting Type | Surface Mount Device (SMD/SMT) |
| Dimension Reference | Length 3.3mm, Width 3.8mm, Height 1.4mm |
| Surface Marking / Silkscreen | H06P5A Marking |
| Transistor Technology | N-Channel Enhancement Mode LDMOS |
| Operating Frequency Range | 1.8 MHz ~ 600 MHz (VHF / UHF Band) |
| Typical Saturated RF Output Power | 0.5 W (26.99 dBm), Max Peak 1.5 W |
| Operating Drain Voltage | Typical 4V DC |
| Quiescent Drain Current | 50 mA |
| Typical Power Added Efficiency(PAE) | 70% ~ 73% |
| Storage & Junction Temperature Range | -55°C to +150°C |
| Packaging Format | Tape & Reel / Anti-Static Tray Packaging |
Typical Applications
- Pre-driver amplifier stage of handheld walkie-talkie transmitter
- VHF/UHF broadcast signal transmitting modules
- Industrial short-range wireless communication RF front-end
- Low power wireless data transmission equipment
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the main application of WATECH HTU7G06S0P5P?
A: HTU7G06S0P5P is an N-channel LDMOS RF transistor operating at 1.8MHz–600MHz. It is mainly used as a pre-driver amplifier for walkie-talkies, broadcast modules and industrial wireless transmitting front-ends.
Q2: What is the recommended operating voltage and output power?
A: Typical drain supply voltage is 4V DC. Its typical saturated output power is 0.5W, with peak power up to 1.5W under suitable operating conditions.
Q3: How to achieve good heat dissipation for HTU7G06S0P5P?
A: It adopts SOT-89-3L package. Arrange sufficient copper area on PCB around the device to ensure stable heat dissipation during continuous transmission.
Q4: Can HTU7G06S0P5P directly replace HTL7G06S009P?
A: Direct replacement is not available. HTU7G06S0P5P is a 0.5W / 4V pre-driver transistor, while HTL7G06S009P is an 8W high-power final-stage transistor with different voltage and power parameters. The matching circuit needs redesign if switching models.
Q5: Are there cross-brand alternative LDMOS devices for this model?
A: Some SOT-89 packaged low-power VHF/UHF RF transistors can be alternatives after circuit adjustment. Input and output matching networks need retuning due to different impedance. Prototype testing is suggested before mass production.
Q6: Can this component be used for cellular base station power amplifiers?
A: Not recommended. This transistor is designed for low-frequency VHF/UHF portable radios instead of high-frequency cellular bands. Base station RF transistors belong to different categories and cannot be interchanged.
Q7: Will different suffixes of HTU7G06S0P5P affect electrical performance?
A: Suffix differences generally represent packaging or batch variations. Core electrical parameters remain consistent. Please confirm packaging type before ordering.
Q8: What is the temperature limit for HTU7G06S0P5P?
A: Storage and junction temperature range: -55°C ~ +150°C. Reserve sufficient temperature margin for long-term continuous transmission applications.
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