Share to:
IRF1010EPBF
IRF1010EPBF
| Part Number | IRF1010EPBF |
|---|---|
| Manufacturer | Infineon Technologies (International Rectifier) |
| Category | Discrete Semiconductors; N-Channel Power MOSFET |
| Description | N-Channel Enhancement Mode Power MOSFET, 60V, 83A,12 mΩ, Low Rds(on), TO-220AB Package |
Product Overview
The IRF1010EPBF is a high-performance N-channel HEXFET power MOSFET from Infineon Technologies. It features low on-state resistance, high continuous drain current, fast switching speed, and excellent thermal performance. This RoHS-compliant device provides reliable operation, high surge current capability, and ruggedness for industrial power supplies, motor control, DC-DC converters, inverters, and high-power switching applications.
| Key Specifications | |
|---|---|
| Brand | Infineon Technologies (IR) |
| RoHS Status | RoHS Compliant |
| EDA / CAD Models | 3D Model, Symbol, Footprint Available |
| Warranty | 2-Year Warranty |
| Package / Case | TO-220AB |
| Mounting Type | Through Hole |
| Surface Marking / Silkscreen | F1010E |
| Drain-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) | 83 A |
| On-State Resistance (Rds(on)) | 12 mΩ (Max) |
| Operating Temperature | -55°C to +175°C |
Typical Applications
- DC Motor Drive & Control Systems
- High-Current DC-DC Converters
- Switching Mode Power Supplies (SMPS)
- Electric Vehicle Power Control
- Uninterruptible Power Supplies (UPS)
- Industrial Welding & Power Tools
- Solar Inverters & Energy Storage Systems
- General Purpose High-Power Switching
Order & Shipping Info
Minimum Order Quantity (MOQ): 1 Piece
Shipping Time: Shipped within 1-2 business days
Delivery Time: 3-7 working days worldwide
Shipping Methods: DHL, UPS, FedEx, EMS
Payment Methods: T/T (Bank Transfer), PayPal, Credit Card, Western Union
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Related Products
