IRFB3206PBF
| Part Number | IRFB3206PBF |
|---|---|
| Manufacturer | Infineon Technologies (International Rectifier) |
| Category | Discrete Semiconductors; N-Channel Power MOSFET |
| Description | N-Channel Enhancement Mode Power MOSFET, 60V, 210A,3 mΩ, Ultra Low Rds(on), TO-220AB Through Hole Package |
Product Overview
The IRFB3206PBF is a high-current, high-efficiency N-channel HEXFET power MOSFET from Infineon Technologies. It features ultra-low on-state resistance, high continuous drain current, fast switching speed, and excellent thermal performance. This RoHS-compliant device provides reliable operation, high surge current capability, and ruggedness, making it perfect for high-power switching, motor drives, inverters, and battery-powered equipment applications.
| Key Specifications | |
|---|---|
| Brand | Infineon Technologies (IR) |
| RoHS Status | RoHS Compliant |
| EDA / CAD Models | 3D Model, Symbol, Footprint Available |
| Warranty | 2-Year Warranty |
| Package / Case | TO-220AB |
| Mounting Type | Through Hole |
| Surface Marking / Silkscreen | IRFB3206 |
| Drain-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) | 210 A |
| On-State Resistance (Rds(on)) | 3 mΩ (Max) |
| Operating Temperature | -55°C to +175°C |
Typical Applications
- High-Current DC Motor Drives & Controllers
- Electric Vehicle, E-Bike & Scooter Systems
- High-Power DC-DC Converters & Inverters
- Power Tools & Battery-Powered Equipment
- Switching Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
- Solar Inverters & Energy Storage Units
- Industrial High-Power Switching Modules
Order & Shipping Info
Minimum Order Quantity (MOQ): 1 Piece
Shipping Time: Shipped within 1-2 business days
Delivery Time: 3-7 working days worldwide
Shipping Methods: DHL, UPS, FedEx, EMS
Payment Methods: T/T (Bank Transfer), PayPal, Credit Card, Western Union
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.

