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MRF141G
MRF141G
| Part Number | MRF141G |
|---|---|
| Manufacturer | M/A‑COM Technology Solutions / Motorola |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | 300W Push‑Pull N‑Channel Enhancement‑Mode RF Power MOSFET Transistor, 28V, 2 MHz to 175 MHz, Hermetic Flange Package. |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
MRF141G is a dual N‑channel push‑pull RF power MOSFET from Motorola / MACOM. This hermetic flange‑mount transistor delivers 300 W CW output at 28 V, covering 2‑175 MHz. Two well‑matched internal dies support push‑pull amplifier topologies for commercial, industrial and military VHF transmitters, FM broadcast and RF generator applications.
Core Advantages
High‑Power Broadband Performance
300 W CW output, 12 dB minimum gain for 2‑175 MHz wide‑band operation, low intermodulation distortion for linear amplification.
Integrated Push‑Pull Dual‑Die Design
Matched dual MOSFET dice inside single hermetic package, simplifies push‑pull circuit design and reduces matching complexity.
Enhanced Ruggedness & Thermal Stability
Negative temperature coefficient avoids thermal runaway; withstands high VSWR load mismatch under full rated power for harsh environments.
Optimized RF Capacitance
Tuned input‑output capacitance supports multi‑octave transmitters and high‑power driver‑stage circuits.
Key Specifications
| Brand | MACOM / Motorola |
|---|---|
| RoHS Status | Non‑RoHS, Hermetic metal‑ceramic package |
| EDA / CAD | PCB Footprint & 3D Model Available upon Request |
| Warranty | 1‑Year Standard Quality Warranty |
| Package / Case | Case 375‑04 (Flange / Header Mount) |
| Mounting Type | Chassis / Flange Mount |
| Surface Marking / Silkscreen | MRF141G / MACOM |
| Transistor Technology | Dual N‑Channel RF Power MOSFET (Push‑Pull) |
| Frequency Range | 2 MHz to 175 MHz |
| Output Power (Pout) | 300 W (Continuous Wave @175 MHz, 28V) |
| Power Gain (Gps) | 12 dB Min, 14 dB Typical @ 175 MHz, 28V |
| Drain‑Source Voltage (VDS) | 65 V (Max) / 28 V (Nominal Operating) |
| Gate‑Source Voltage (VGS) | ±40 V (Max) |
| Drain Current (ID) | 32 A (Continuous Max total) |
| Total Power Dissipation(Pd @Tc=25℃) | 500 W |
| Thermal Resistance RθJC | 0.35 ℃/W |
| Efficiency(Typ) | 50% @175MHz,28V |
| Input Capacitance(Ciss Typ) | 350 pF |
| Output Capacitance(Coss Typ) | 420 pF |
| Reverse Transfer Capacitance(Crss Typ) | 35 pF |
| Operating Junction Temperature | -65°C to +200°C |
Typical Applications
- HF and VHF Band Commercial and Military Communications Transmitters
- FM Radio Broadcast Power Amplifiers and TV Broadcast Transmitters
- Class A, Class AB, and Class C High‑Power Linear Amplifiers
- Industrial, Scientific, and Medical (ISM) RF Generators and Plasma Drivers
- Tactical Mobile Radios and Airborne RF Communication Systems
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1‑2 business days |
| Delivery Time | 3‑7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What is the power output and frequency range of MRF141G?
A: 2‑175 MHz bandwidth, 300 W CW output @28V supply; gain 12 dB min, 14 dB typical @175 MHz.
Q2: What topology is MRF141G designed for?
A: Dual N‑channel push‑pull RF MOSFET, hermetic Case 375‑04 package, intended for push‑pull amplifier circuits.
Q3: What is the operating voltage for MRF141G?
A: Nominal VDD=28V DC. Max VDS=65V, gate‑source voltage limited to ±40V.
Q4: What is the difference between MRF141 and MRF141G?
A: Same electrical specs and pinout. MRF141G is hermetic for military / harsh high‑humidity environments. MRF141 is non‑hermetic for indoor general‑use. Not drop‑in replacement under severe environmental conditions.
Q5: Are there alternative replacement parts?
A: MRF141 works for indoor non‑hermetic applications. No modern direct pin‑to‑pin equivalent. MRF136 series covers same frequency band but lower power, cannot replace 300W requirement.
Q6: What handling precautions apply to MRF141G?
A: Gate is ESD sensitive. Anti‑static tools are required for assembly. Proper thermal mounting is needed, RθJC=0.35℃/W.
Q7: Can MRF141G be used in single‑ended amplifier?
A: Not recommended. This dual‑die component requires push‑pull topology to utilize both internal transistors.
Q8: How to get datasheet, footprint or bulk price?
A: Submit Quick Inquiry for datasheet, footprint drawing, stock confirmation and volume quotation.
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