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MRF8P26080HSR3
MRF8P26080HSR3
| Part Number | MRF8P26080HSR3 |
|---|---|
| Manufacturer | NXP Semiconductors / Freescale |
| Category | Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF MOSFETs / Power Transistors |
| Description | 80W Peak Asymmetric Dual-Path Doherty LDMOS RF Power Transistor, 2600MHz Cellular Base Station Amplifier, NI-780S-4 Ceramic Flangeless Package. |
| Stock Status | In Stock (Obsolete original part, limited inventory) |
| Origin | Original Factory |
Product Overview
The MRF8P26080HSR3 is an NXP LDMOS RF power transistor for 2500–2700 MHz LTE base station Doherty amplifiers. Built on 8th-generation LDMOS asymmetric dual-path die design. It delivers 80W peak CW power and 14W average W-CDMA power at 28V supply. Housed in NI-780S-4 ceramic package with low thermal resistance. This part is obsolete, only existing stock available.
Core Advantages
8th-Gen LDMOS Process
Stable power density, reliable thermal performance and high efficiency for wireless PA design.
Integrated Doherty Dual Die
Combines main & peak transistors inside single package, achieves high efficiency at 8dB back-off and simplifies PCB layout.
Excellent Linearity
Low memory effect, compatible with LTE / 5G sub-6GHz signals, suitable for DPD linearization.
High Ruggedness
Withstands VSWR up to 10:1; built-in ESD protection improves long-term operational stability.
Key Specifications
| Brand | NXP Semiconductors / Freescale |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free / Green |
| EDA/CAD | Symbol, Footprint & 3D Model Available |
| Warranty | 1-Year Standard Quality Warranty |
| Package / Case | NI-780S-4 (Case 465H-02) Ceramic Flangeless Package |
| Mounting Type | Surface Mount Device (SMD/SMT) / Direct Heat-Sink Mounting |
| Surface Marking / Silkscreen | MRF8P26080HS Marking |
| Transistor Technology | 8th Generation N-Channel Dual LDMOS |
| Frequency Range | 2500 MHz to 2700 MHz (Band 7 / Band 38 / Band 41) |
| Peak CW Output Power (P3dB) | Typ. 80 W (VDD = 28 V, f = 2600 MHz) |
| Average Rated Output Power | Typ. 14W (W-CDMA 3.84MHz modulated signal) |
| Operating Drain Voltage (VDD Nominal) | 28 V DC |
| Maximum Drain Voltage (Vdd Max) | 65 V DC |
| Power Gain (Gp) | Typ. 14.5 dB at 2600 MHz |
| Quiescent Drain Current (IDQ) | 300 mA |
| Doherty Drain Efficiency (ηd) | Typ. 45% or higher at 8 dB power back-off |
| Thermal Resistance (θjc) | 0.88 °C/W (Junction to Case) |
| Operating Junction Temperature (Tj) | -65°C ~ +225°C, recommended continuous operation ≤175°C |
| Operation Class | Class AB / Class C |
| Packaging Format | Tape & Reel (R3 suffix: 250 units per 13-inch reel) |
| Lifecycle Status | No Longer Manufactured, limited stock supply only |
Typical Applications
- Macrocell cellular base station power amplifiers (LTE, LTE-A, 5G Sub-6GHz Band 41 / 2.6 GHz)
- Remote Radio Head (RRH) and Remote Radio Unit (RRU) driver and final amplifier stages
- Active Antenna Systems (AAS) and Massive MIMO transceivers
- Commercial wireless repeaters, microcell boosters, and WiMAX base stations
- High-power sub-3GHz broadband industrial RF power transmitters
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: What does the “R3” suffix mean in MRF8P26080HSR3?
A: R3 represents tape & reel packing (250pcs/13-inch reel). MRF8P26080HS is tray bulk version. Their electrical parameters are identical and interchangeable.
Q2: What is the difference between 80W peak power and 14W average power?
A: 80W is CW saturated peak power under test condition; 14W is stable average power for W-CDMA signals. Continuous running at peak power is not advised, follow the 14W rating for long-term use.
Q3: This part is obsolete. What alternative models are recommended?
A: NXP upgrade option: MRF8P26140 series. Cross-brand alternative: Ampleon BLC series 2.6GHz Doherty LDMOS. New models deliver higher efficiency but require PCB circuit redesign, not direct drop-in replacement.
Q4: Can MRF8P26080HSR3 replace other 2.6GHz RF transistors?
A: Direct replacement needs consistent frequency, voltage, package and impedance. Same pins cannot guarantee amplifier performance, matching circuit retuning is necessary.
Q5: Risks of continuous operation over 175°C junction temperature?
A: Max junction temperature limit is 225°C. Long-term operation above 175°C speeds up parameter drift and reduces service life. We suggest continuous Tj ≤175°C.
Q6: NI-780S-4 ceramic package vs plastic SMD RF power packages?
A: NI-780S-4 ceramic package offers superior thermal conductivity for high-power base station PA. It supports higher temperature than plastic packages, with higher cost and stricter heat sink assembly requirements.
Q7: Difference between Doherty dual-path transistor and single LDMOS transistor?
A: This device integrates main and peak dies for Doherty topology. Separate single LDMOS needs two devices to build Doherty circuits. The integrated design saves PCB space and only fits Doherty amplifiers.
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