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MRFE6VP6300HR5
MRFE6VP6300HR5
| Part Number | MRFE6VP6300HR5 |
| Manufacturer | NXP Semiconductors |
| Category | RF Semiconductors > RF Power Transistors > VHF/UHF LDMOS Power FET |
| Description | 300W LDMOS RF Power Transistor, 30MHz~512MHz, High Power Broadcast & Industrial RF Amplifier,NI-780-4 Package |
Product Overview
The MRFE6VP6300HR5 is a high-power NXP LDMOS RF power transistor optimized for broadband high-frequency RF amplification across 30MHz to 512MHz frequency range. Built with advanced silicon LDMOS wafer process technology, this device delivers up to 300W continuous RF output power with high gain and excellent drain efficiency, featuring robust thermal stability and superior ruggedness against load mismatch damage. HFP metal flange package enables efficient external heatsink installation for high-power heat dissipation, widely deployed for FM broadcast transmitters, industrial RF heating equipment, high-power RF test amplifiers and radio communication base station power modules.
Key Specifications
| Brand | NXP Semiconductors |
| RoHS | RoHS Compliant |
| EDA / CAD | Symbols, Footprints, 3D Models Available |
| Warranty | 1 Year Standard Warranty |
| Package / Case | NI-780-4 Package |
| Mounting Type | Screw Mount with External Heatsink |
| Surface Marking / Silkscreen | MRFE6VP6300H Marking |
| Frequency Range | 30MHz ~ 512MHz |
| Output Power (Pout) | 300W Typical |
| Operating Drain Voltage | 50V DC |
| Typical Power Gain | 18dB |
| Operating Temperature | -40°C ~ 150°C |
Typical Applications
- FM Radio Broadcast High Power Transmitter Amplifier Stages
- Industrial RF Induction Heating & Dielectric Heating Equipment
- High Power RF Laboratory Test & Signal Source Amplifiers
- VHF Land Mobile Radio Base Station Power Amplifier Modules
- Plasma Generation RF Power Supply Driver Circuits
- High Power Ultrasonic RF Drive Source Equipment
- Shortwave Communication High Power RF Amplifier Units
- RF Dryer & Industrial High-Frequency Processing Devices
Order & Shipping Info
Minimum Order Quantity (MOQ): 1 Piece
Shipping Time: Shipped within 1-2 business days
Delivery Time: 3-7 working days worldwide
Shipping Methods: DHL, UPS, FedEx, EMS
Payment Methods: T/T (Bank Transfer), PayPal, Credit Card, Western Union
Technical Support
Frequently Asked Questions
Q1: Is MRFE6VP6300HR5 RoHS compliant?
A: Yes, this product fully complies with RoHS environmental standards.
Q2: Can I apply for product samples for testing?
A: Sample service is available, please submit your request via the Quick Inquiry form.
Q3: What is the package and mounting type?
A: It adopts NI-780-4 package and fixed by screw with external heatsink mounting.
Q4: What’s the typical RF output power of this LDMOS transistor?
A: It features typical 300W continuous RF output power under rated 50V drain supply voltage.
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