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MW6S004NT1
MW6S004NT1
| Part Number | MW6S004NT1 |
|---|---|
| Manufacturer | NXP Semiconductors (Formerly Freescale Semiconductor) |
| Category | Discrete Semiconductor Products > Transistors – FETs, MOSFETs – RF |
| Description | 4W high-gain RF LDMOS power transistor up to 1.5GHz, rugged Class A/AB linear driver for cellular base station amplifiers |
| Stock Status | In Stock |
| Origin | Original Factory |
Product Overview
The MW6S004NT1 is NXP’s single-channel N-channel RF LDMOS power transistor for linear driver amplifiers. It operates up to 1500MHz, delivers 4W CW RF output power with 23dB typical gain and 45%~50% drain efficiency, supporting GSM/GPRS/EDGE/W-CDMA modulation. Built with 6th-gen LDMOS technology, it integrates on-chip ESD protection and withstands 10:1 VSWR mismatch. Packaged in thermally enhanced flanged PLD-1.5 SMT housing, it fits cellular base station drivers, ISM wireless transceivers and RF test equipment.
Core Advantages
High Gain and Efficiency
Provides excellent 23dB power gain and 45%~50% drain efficiency in Class AB or Class A configurations, minimizing front-end driving power and reducing overall system power consumption.
Superior VSWR Ruggedness
Withstands high VSWR load mismatch without device degradation, stable long-term operation under unstable antenna matching conditions.
Integrated On-Chip ESD Protection
Built-in gate-source ESD diodes support Class 1B HBM ESD rating, greatly lowering static damage risk during PCB assembly.
Low Thermal Resistance Packaging
Flanged PLD-1.5 package with low θjc thermal resistance efficiently dissipates heat, limits junction temperature rise and extends service life.
Key Specifications
| Brand | NXP Semiconductors |
|---|---|
| RoHS Status | RoHS Compliant / Lead-Free Standard |
| EDA/CAD Model | 3D Model & PCB Footprint Available upon request |
| Warranty | 1-Year Standard Factory Warranty |
| Package / Case | PLD-1.5 |
| Mounting Type | Surface Mount Technology (SMD/SMT) |
| MSL Moisture Sensitivity Level | MSL 1 (Unlimited Floor Life) |
| Surface Marking / Silkscreen | M6S4N Marking |
| Number of Channels | 1 Single N-Channel RF LDMOS |
| Frequency Operating Range | Characterized up to 1500 MHz (1.5 GHz) |
| Standard Test Frequency | 900 MHz |
| Output Power ($P_{1dB}$) | 4 Watts CW (Continuous Wave) Minimum @ 900MHz, 28V |
| Power Gain ($G_{ps}$) Typical | ~23 dB @ 900 MHz (Dependent on Test Circuit Tuning) |
| Drain Efficiency ($\eta$) Typical | ~45% to 50% under optimized biasing @ 900MHz |
| Supported Modulation Types | GSM, GPRS, EDGE, W-CDMA Linear RF Signals |
| VSWR Ruggedness Rating | 10:1 Full Mismatch Tolerance |
| Nominal Supply Voltage ($V_{DD}$) | 28 VDC Standard Operating Voltage |
| Max Drain-Source Voltage ($V_{DS}$) | 68 VDC Absolute Maximum Rating |
| Gate Threshold Voltage ($V_{GS(th)}$) | 2.7 V Typical |
| Gate-Source Breakdown Voltage ($V_{(BR)GSS}$) | -6V to +10V Absolute Maximum Limits |
| Total Power Dissipation ($P_D$) | 4W Maximum Continuous Power Rating |
| Thermal Resistance (θjc) | 2.5°C/W Junction to Case Thermal Resistance |
| Operating Junction Temperature Grade | Up to +150°C Maximum Operational Silicon Junction Limit ($T_J$) |
Typical Applications
- Cellular Base Station Transmitters, Macro-cell Driver Stages, and Micro-cell Power Amplifiers
- Industrial, Scientific, and Medical (ISM) Band Wireless Communication Transceivers
- Smart Utility Automated Meter Reading (AMR) Telemetry Nodes and Private Radio Links
- High-Speed RF Test Equipment, Signal Generators, and Laboratory Calibration Systems
- Wireless Local Loop (WLL) Infrastructure and Military/Tactical Mobile Radio Backplanes
Order & Shipping Info
| Minimum Order Quantity (MOQ) | 1 Piece |
|---|---|
| Shipping Time | Shipped within 1-2 business days |
| Delivery Time | 3-7 working days worldwide |
| Shipping Methods | DHL, UPS, FedEx, EMS |
| Payment Methods | T/T (Bank Transfer), PayPal, Credit Card, Western Union |
Technical Support
For datasheet, sample requests, stock check, or bulk pricing, please use the Quick Inquiry form. We will reply within 24 hours.
Frequently Asked Questions
Q1: Is your currently available stock of the MW6S004NT1 transistor 100% genuine and original?
A: Yes, we guarantee that all MW6S004NT1 components in our inventory are 100% brand-new, factory-original products from NXP Semiconductors. Every batch is tracked, verified, and shipped inside standard moisture-barrier bags with strict anti-static ESD shielding measures.
Q2: What is indicated by the “T1” suffix inside the manufacturer’s part number?
A: The “T1” suffix indicates the standard factory packaging format. It designates that the component is supplied on 7-inch reels containing 1,000 units per reel, perfectly optimized for high-speed automated pickup and SMT reflow assembly lines.
Q3: Can the MW6S004NT1 be safely deployed into frequencies higher than 1500 MHz?
A: The transistor is explicitly characterized and optimized for peak performance up to 1500 MHz. Operating it significantly above this limit may lead to reduced power gain, decreased drain efficiency, and matching complexities. For higher frequency requirements, please consult our engineering support team for alternative part options.
Q4: How can our engineering development team request S-parameter simulation models, reference layout gerbers, or volume pricing tiers?
A: Please complete our Quick Inquiry web form on this page with details about your processing parameters. Our application support desk will process your inquiry and dispatch the available technical documentation package within 24 hours.
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